JP2001203200A5 - - Google Patents

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Publication number
JP2001203200A5
JP2001203200A5 JP2000013895A JP2000013895A JP2001203200A5 JP 2001203200 A5 JP2001203200 A5 JP 2001203200A5 JP 2000013895 A JP2000013895 A JP 2000013895A JP 2000013895 A JP2000013895 A JP 2000013895A JP 2001203200 A5 JP2001203200 A5 JP 2001203200A5
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JP
Japan
Prior art keywords
film
insulating film
silicon
atoms
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000013895A
Other languages
English (en)
Japanese (ja)
Other versions
JP3615979B2 (ja
JP2001203200A (ja
Filing date
Publication date
Priority claimed from JP2000013895A external-priority patent/JP3615979B2/ja
Priority to JP2000013895A priority Critical patent/JP3615979B2/ja
Application filed filed Critical
Priority to TW090101031A priority patent/TW513763B/zh
Priority to US09/760,777 priority patent/US6358838B2/en
Priority to KR1020010002929A priority patent/KR100689917B1/ko
Publication of JP2001203200A publication Critical patent/JP2001203200A/ja
Priority to US10/050,859 priority patent/US6680541B2/en
Publication of JP2001203200A5 publication Critical patent/JP2001203200A5/ja
Publication of JP3615979B2 publication Critical patent/JP3615979B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000013895A 2000-01-18 2000-01-18 半導体装置及びその製造方法 Expired - Fee Related JP3615979B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000013895A JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法
TW090101031A TW513763B (en) 2000-01-18 2001-01-17 Semiconductor device and process for producing the same
US09/760,777 US6358838B2 (en) 2000-01-18 2001-01-17 Semiconductor device and process for producing the same
KR1020010002929A KR100689917B1 (ko) 2000-01-18 2001-01-18 반도체 장치 및 그 제조 방법
US10/050,859 US6680541B2 (en) 2000-01-18 2002-01-18 Semiconductor device and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000013895A JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001203200A JP2001203200A (ja) 2001-07-27
JP2001203200A5 true JP2001203200A5 (enExample) 2004-12-24
JP3615979B2 JP3615979B2 (ja) 2005-02-02

Family

ID=18541427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000013895A Expired - Fee Related JP3615979B2 (ja) 2000-01-18 2000-01-18 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6358838B2 (enExample)
JP (1) JP3615979B2 (enExample)
KR (1) KR100689917B1 (enExample)
TW (1) TW513763B (enExample)

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JP4270865B2 (ja) * 2000-08-18 2009-06-03 三菱電機株式会社 実装基板及び実装基板を用いたバルブソケット
JP2002329722A (ja) * 2001-04-27 2002-11-15 Nec Corp 半導体装置及びその製造方法
US6699792B1 (en) * 2001-07-17 2004-03-02 Advanced Micro Devices, Inc. Polymer spacers for creating small geometry space and method of manufacture thereof
US6887780B2 (en) * 2001-08-31 2005-05-03 Intel Corporation Concentration graded carbon doped oxide
JP3913638B2 (ja) * 2001-09-03 2007-05-09 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP2003092349A (ja) * 2001-09-18 2003-03-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4063619B2 (ja) * 2002-03-13 2008-03-19 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3516446B2 (ja) 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US7071112B2 (en) * 2002-10-21 2006-07-04 Applied Materials, Inc. BARC shaping for improved fabrication of dual damascene integrated circuit features
US6867126B1 (en) * 2002-11-07 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method to increase cracking threshold for low-k materials
US20040152295A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Sacrificial metal liner for copper
US7279410B1 (en) 2003-03-05 2007-10-09 Advanced Micro Devices, Inc. Method for forming inlaid structures for IC interconnections
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US6767827B1 (en) 2003-06-11 2004-07-27 Advanced Micro Devices, Inc. Method for forming dual inlaid structures for IC interconnections
US6919636B1 (en) 2003-07-31 2005-07-19 Advanced Micro Devices, Inc. Interconnects with a dielectric sealant layer
TWI285938B (en) * 2003-08-28 2007-08-21 Fujitsu Ltd Semiconductor device
JP4282493B2 (ja) * 2004-01-15 2009-06-24 株式会社東芝 膜形成方法及び基板処理装置
TW200605220A (en) * 2004-06-21 2006-02-01 Hitachi Chemical Co Ltd Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid
JP4854938B2 (ja) 2004-07-06 2012-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
US7332428B2 (en) * 2005-02-28 2008-02-19 Infineon Technologies Ag Metal interconnect structure and method
US7214612B2 (en) * 2005-08-31 2007-05-08 United Microelectronics Corp. Dual damascene structure and fabrication thereof
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
JP5154009B2 (ja) * 2005-10-21 2013-02-27 株式会社ジャパンディスプレイイースト 有機シロキサン系絶縁膜の製造方法、及び、この製造方法で製造した有機シロキサン系絶縁膜を層間絶縁として用いた液晶表示装置の製造方法
JP5168142B2 (ja) * 2006-05-17 2013-03-21 日本電気株式会社 半導体装置
US8637396B2 (en) * 2008-12-01 2014-01-28 Air Products And Chemicals, Inc. Dielectric barrier deposition using oxygen containing precursor
EP2306506B1 (en) * 2009-10-01 2013-07-31 ams AG Method of producing a semiconductor device having a through-wafer interconnect
JP2013020530A (ja) * 2011-07-13 2013-01-31 Dainippon Printing Co Ltd タッチセンサパネル部材、タッチセンサパネル部材を備えた表示装置、及びタッチセンサパネル部材の製造方法
US10319630B2 (en) * 2012-09-27 2019-06-11 Stmicroelectronics, Inc. Encapsulated damascene interconnect structure for integrated circuits
US8980740B2 (en) 2013-03-06 2015-03-17 Globalfoundries Inc. Barrier layer conformality in copper interconnects
KR102756671B1 (ko) * 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법

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US5407529A (en) * 1992-03-04 1995-04-18 Nec Corporation Method for manufacturing semiconductor device
KR100361043B1 (ko) * 1993-12-27 2003-04-10 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 반도체장치의절연막및절연막형성용도포액및절연막의제조방법
US6326318B1 (en) * 1995-09-14 2001-12-04 Sanyo Electric Co., Ltd. Process for producing semiconductor devices including an insulating layer with an impurity
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
JP3726226B2 (ja) 1998-02-05 2005-12-14 日本エー・エス・エム株式会社 絶縁膜及びその製造方法
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6383951B1 (en) * 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6255232B1 (en) * 1999-02-11 2001-07-03 Taiwan Semiconductor Manufacturing Company Method for forming low dielectric constant spin-on-polymer (SOP) dielectric layer
US6312793B1 (en) * 1999-05-26 2001-11-06 International Business Machines Corporation Multiphase low dielectric constant material
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
EP1077479A1 (en) * 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6365528B1 (en) * 2000-06-07 2002-04-02 Lsi Logic Corporation Low temperature process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric-material characterized by improved resistance to oxidation and good gap-filling capabilities

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