JP2004523889A5 - - Google Patents
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- Publication number
- JP2004523889A5 JP2004523889A5 JP2002555477A JP2002555477A JP2004523889A5 JP 2004523889 A5 JP2004523889 A5 JP 2004523889A5 JP 2002555477 A JP2002555477 A JP 2002555477A JP 2002555477 A JP2002555477 A JP 2002555477A JP 2004523889 A5 JP2004523889 A5 JP 2004523889A5
- Authority
- JP
- Japan
- Prior art keywords
- value
- methyl
- containing silane
- barrier layer
- diffusion barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 6
- 229910000077 silane Inorganic materials 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 5
- 238000009792 diffusion process Methods 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 239000000203 mixture Substances 0.000 claims 4
- 239000001272 nitrous oxide Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical group C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25948901P | 2001-01-03 | 2001-01-03 | |
| PCT/US2002/000130 WO2002054484A2 (en) | 2001-01-03 | 2002-01-03 | Metal ion diffusion barrier layers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004523889A JP2004523889A (ja) | 2004-08-05 |
| JP2004523889A5 true JP2004523889A5 (enExample) | 2005-12-22 |
| JP4242648B2 JP4242648B2 (ja) | 2009-03-25 |
Family
ID=22985168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002555477A Expired - Fee Related JP4242648B2 (ja) | 2001-01-03 | 2002-01-03 | 金属イオン拡散バリア層 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20020137323A1 (enExample) |
| JP (1) | JP4242648B2 (enExample) |
| KR (1) | KR100837100B1 (enExample) |
| CN (1) | CN1524291A (enExample) |
| TW (1) | TWI272694B (enExample) |
| WO (1) | WO2002054484A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4152619B2 (ja) * | 2001-11-14 | 2008-09-17 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US6890850B2 (en) * | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
| US6917108B2 (en) * | 2002-11-14 | 2005-07-12 | International Business Machines Corporation | Reliable low-k interconnect structure with hybrid dielectric |
| JP4142941B2 (ja) * | 2002-12-06 | 2008-09-03 | 株式会社東芝 | 半導体装置の製造方法 |
| US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
| US7081673B2 (en) * | 2003-04-17 | 2006-07-25 | International Business Machines Corporation | Multilayered cap barrier in microelectronic interconnect structures |
| US6849561B1 (en) * | 2003-08-18 | 2005-02-01 | Asm Japan K.K. | Method of forming low-k films |
| US7199046B2 (en) * | 2003-11-14 | 2007-04-03 | Tokyo Electron Ltd. | Structure comprising tunable anti-reflective coating and method of forming thereof |
| EP1799877B2 (en) | 2004-08-18 | 2016-04-20 | Dow Corning Corporation | Sioc:h coated substrates |
| KR101210859B1 (ko) | 2004-08-18 | 2012-12-11 | 다우 코닝 코포레이션 | 피복 기판 및 이의 제조방법 |
| KR100967266B1 (ko) * | 2008-05-26 | 2010-07-01 | 주식회사 삼안 | 태양광 추적장치 및 그 추적 방법 |
| US8836127B2 (en) * | 2009-11-19 | 2014-09-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect with flexible dielectric layer |
| JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
| US8461683B2 (en) * | 2011-04-01 | 2013-06-11 | Intel Corporation | Self-forming, self-aligned barriers for back-end interconnects and methods of making same |
| US10163981B2 (en) * | 2016-04-27 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal landing method for RRAM technology |
| EP3549620A1 (en) * | 2018-04-04 | 2019-10-09 | BIOTRONIK SE & Co. KG | Coated implantable medical device and coating method |
| US11749563B2 (en) | 2018-06-27 | 2023-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interlayer dielectric layer |
| US11152262B2 (en) * | 2018-11-30 | 2021-10-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cut metal gate devices and processes |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
-
2002
- 2002-01-03 WO PCT/US2002/000130 patent/WO2002054484A2/en not_active Ceased
- 2002-01-03 CN CNA028034384A patent/CN1524291A/zh active Pending
- 2002-01-03 US US10/037,289 patent/US20020137323A1/en not_active Abandoned
- 2002-01-03 JP JP2002555477A patent/JP4242648B2/ja not_active Expired - Fee Related
- 2002-01-03 KR KR1020037008972A patent/KR100837100B1/ko not_active Expired - Fee Related
- 2002-01-03 TW TW091100016A patent/TWI272694B/zh not_active IP Right Cessation
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