JP2004235632A5 - - Google Patents

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Publication number
JP2004235632A5
JP2004235632A5 JP2004015250A JP2004015250A JP2004235632A5 JP 2004235632 A5 JP2004235632 A5 JP 2004235632A5 JP 2004015250 A JP2004015250 A JP 2004015250A JP 2004015250 A JP2004015250 A JP 2004015250A JP 2004235632 A5 JP2004235632 A5 JP 2004235632A5
Authority
JP
Japan
Prior art keywords
precursor
nitrogen
reactor
group
group iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004015250A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004235632A (ja
Filing date
Publication date
Priority claimed from US10/352,491 external-priority patent/US6887727B2/en
Application filed filed Critical
Publication of JP2004235632A publication Critical patent/JP2004235632A/ja
Publication of JP2004235632A5 publication Critical patent/JP2004235632A5/ja
Withdrawn legal-status Critical Current

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JP2004015250A 2003-01-28 2004-01-23 半導体材料の層を成長させる方法 Withdrawn JP2004235632A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/352,491 US6887727B2 (en) 2003-01-28 2003-01-28 System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element

Publications (2)

Publication Number Publication Date
JP2004235632A JP2004235632A (ja) 2004-08-19
JP2004235632A5 true JP2004235632A5 (enExample) 2007-03-08

Family

ID=32735982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004015250A Withdrawn JP2004235632A (ja) 2003-01-28 2004-01-23 半導体材料の層を成長させる方法

Country Status (2)

Country Link
US (1) US6887727B2 (enExample)
JP (1) JP2004235632A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7452345B2 (en) * 2002-09-17 2008-11-18 Baylor College Of Medicine Anti-infective endotracheal tube
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
KR101037793B1 (ko) * 2004-06-30 2011-05-27 삼성전자주식회사 레이저 다이오드의 제조방법
JP5136437B2 (ja) * 2009-01-23 2013-02-06 住友電気工業株式会社 窒化物系半導体光素子を作製する方法
JP5212281B2 (ja) * 2009-07-03 2013-06-19 日立電線株式会社 半導体光素子基板の製造方法
US8222052B2 (en) 2009-12-01 2012-07-17 The United States Of America As Represented By The Secretary Of The Army Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis
US10043941B1 (en) 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
CN112563378B (zh) * 2020-12-11 2022-02-25 西安立芯光电科技有限公司 一种氧化增光二极管制作方法
CN113668049A (zh) * 2021-08-20 2021-11-19 深圳市中科芯辰科技有限公司 一种垂直腔面发射激光器制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
DE69637304T2 (de) * 1995-03-17 2008-08-07 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung
US6207973B1 (en) * 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures

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