ATE491227T1 - Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten - Google Patents

Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten

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Publication number
ATE491227T1
ATE491227T1 AT05723820T AT05723820T ATE491227T1 AT E491227 T1 ATE491227 T1 AT E491227T1 AT 05723820 T AT05723820 T AT 05723820T AT 05723820 T AT05723820 T AT 05723820T AT E491227 T1 ATE491227 T1 AT E491227T1
Authority
AT
Austria
Prior art keywords
solder
opening
semiconductor components
interconnect connections
deposition
Prior art date
Application number
AT05723820T
Other languages
English (en)
Inventor
Kyle Kirby
Shuang Meng
Garo Derderian
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE491227T1 publication Critical patent/ATE491227T1/de

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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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AT05723820T 2004-02-20 2005-02-18 Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten ATE491227T1 (de)

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PCT/US2005/006116 WO2005083778A1 (en) 2004-02-20 2005-02-18 Methods of fabricating interconnects for semiconductor components

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US7410898B2 (en) 2008-08-12
DE602005025194D1 (de) 2011-01-20
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US20050186790A1 (en) 2005-08-25
EP1719168A1 (de) 2006-11-08
KR100821764B1 (ko) 2008-04-14
SG166787A1 (en) 2010-12-29
CN100536105C (zh) 2009-09-02
JP2007523498A (ja) 2007-08-16
JP4702562B2 (ja) 2011-06-15
SG131951A1 (en) 2007-05-28
KR20060111708A (ko) 2006-10-27
US6943106B1 (en) 2005-09-13
EP1719168B1 (de) 2010-12-08
WO2005083778A1 (en) 2005-09-09
US7071098B2 (en) 2006-07-04
US20070141835A1 (en) 2007-06-21
US20050186770A1 (en) 2005-08-25
US7189642B2 (en) 2007-03-13
CN1922726A (zh) 2007-02-28
SG131950A1 (en) 2007-05-28

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