JP4702562B2 - 半導体部品のための配線を組立てる方法 - Google Patents
半導体部品のための配線を組立てる方法 Download PDFInfo
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- JP4702562B2 JP4702562B2 JP2006554336A JP2006554336A JP4702562B2 JP 4702562 B2 JP4702562 B2 JP 4702562B2 JP 2006554336 A JP2006554336 A JP 2006554336A JP 2006554336 A JP2006554336 A JP 2006554336A JP 4702562 B2 JP4702562 B2 JP 4702562B2
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- Prior art keywords
- opening
- solder
- layer
- metal nitride
- deposition
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 66
- 239000000463 material Substances 0.000 claims abstract description 108
- 229910000679 solder Inorganic materials 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 150000004767 nitrides Chemical class 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 238000009736 wetting Methods 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 35
- 239000002243 precursor Substances 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 31
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 26
- 238000000231 atomic layer deposition Methods 0.000 abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 21
- 229910052759 nickel Inorganic materials 0.000 abstract description 13
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 108
- 239000002356 single layer Substances 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000010926 purge Methods 0.000 description 16
- 239000010409 thin film Substances 0.000 description 16
- 238000007772 electroless plating Methods 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000004913 activation Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000013626 chemical specie Substances 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BGNGWHSBYQYVRX-UHFFFAOYSA-N 4-(dimethylamino)benzaldehyde Chemical compound CN(C)C1=CC=C(C=O)C=C1 BGNGWHSBYQYVRX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- TVZISJTYELEYPI-UHFFFAOYSA-N hypodiphosphoric acid Chemical compound OP(O)(=O)P(O)(O)=O TVZISJTYELEYPI-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000159 nickel phosphate Inorganic materials 0.000 description 1
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
薄膜の低温堆積は好ましくは、その堆積の間に半導体部品の温度が200℃を超えないように、約200℃以下の温度において行われる。適当な堆積法には、原子層堆積法(ALD)および/または化学蒸着法(CVD)が含まれる。読者が本発明を理解するのを助けるために、最初にALD法とCVD法について多少詳しく説明する。まずALD法について言及すると、それは典型的には、連続する原子層を基板上に形成することを含む。そのような層としては例えば、エピタキシー材料、多結晶質材料および/または非晶質材料があるだろう。ALDは、原子層エピタキシー、原子層プロセスなどとも呼ぶことができる。
開口212が半導体部品200を貫通して全体に延びていて、具体的には前側表面208から裏側表面210まで延びている。開口212は、前側表面208と裏側表面210の間の深さ214、およびこの深さ214に直交する幅216を有する。開口212は、上から見たとき、いかなる適当な形状を有していてもよく、例えば実質的に円形とすることができる。開口212が上から見て実質的に円形である場合、幅216は円の直径に相当するだろう。開口212の形状にかかわらず、開口はある最大の断面幅を有するだろう。特定の見地において、そのような最大の断面幅は約100ミクロン未満であり、さらなる見地においては、そのような最大の断面幅は約35ミクロン未満であろう。
図4と図5を参照して前に説明したプロセスは、導電性材料100に穴をあけて形成した孔130を示していて、従って孔130は導電性材料100を含む外周を有していた。図6の構造物200と図4と図5を参照して説明した構造物との間の違いは、孔212が導電性材料100の全体に延びている外周を有していない、ということである。構造物200は、孔212が最終的に貫通して延びるように形成されるべき間隙を導電性材料100が有するように、パターン化して導電性材料層100を最初に形成することによって、形成することができる。次いで、電気的に絶縁性の材料204で間隙を充填することができ、そして電気的に絶縁性の材料204に穴をあけて開口212を形成することができる。
図11を参照すると、開口212の内部および拡張した領域230の内部にソルダー240が設けられている。ソルダー240は例えば、部品200の裏側からソルダーを供給するウェーブソルダー法(wave-solder methodologies)を用いることによって設けることができる。従って、ソルダーは開口212を充填するが、しかしこれは、例えば開口232を含む部品200の前側と関連する他の印刷上の特徴部分の中には及ばない。
Claims (6)
- 半導体部品のための配線を組立てる方法であって、
半導体部品を用意し、
前記部品を貫通して全体に延びる開口を形成し、ここで前記開口は側壁を有し、
前記開口の側壁に沿って第一の材料を堆積し、ここでこの堆積は200℃以下の温度において行われ、前記第一の材料は、ハフニウムまたはパラジウムを含む、金属窒化物であり、
前記開口の中および第一の材料の上にソルダー湿潤材料を無電解めっきし、ここで前記ソルダー湿潤材料は前記開口を部分的にのみ充填し、そして
前記開口内に前記ソルダー湿潤材料に沿ってソルダーを形成し、ここで前記ソルダーは前記開口を充填する、
工程を含む方法。 - 前記ソルダー湿潤材料は、5ミクロンから7ミクロンの厚さを有する、請求項1に記載の方法。
- 前記金属窒化物の堆積は反応室の中で行われ、
前記堆積においては、前記金属窒化物の金属を含む第一の先駆物質と、前記金属窒化物の窒素を含む第二の先駆物質を用いて行われ、および前記第一および前記第二の先駆物質が異なる時間間隔および実質的に互いに相対的に重なり合わない時間間隔で前記反応室の中に置かれるようにする少なくとも一つのサイクルを用いる、
請求項1または請求項2に記載の方法。 - 半導体部品のための配線を組立てる方法であって、
半導体部品を用意し、ここで前記部品は一対の側部を有する単結晶半導体材料を含み、前記部品は前記単結晶半導体材料の前記側部のうちの一方である前側の外面と前記単結晶半導体材料の前記側部のうちの他方である裏側の外面を含み、前記部品は前記前側に近接している導電性材料層をさらに含み、
前記前側から前記裏側まで延びて従って前記半導体部品を貫通して全体に延びる開口を形成し、ここで前記開口は側壁を有していてそして前記導電性材料層を貫通して延びていて、
前記開口の前記側壁に沿って、ハフニウムまたはパラジウムを含む、金属窒化物である第一の材料を堆積することによって前記開口を狭くし、ここでこの堆積は、1サイクルにつき前記第一の材料を10Å以下で形成しそして前記部品を200℃以下の温度にさらすプロセスの1以上のサイクルを用い、
前記開口の中および前記第一の材料に沿ってソルダー湿潤材料を無電解めっきし、そして
前記ソルダー湿潤材料に沿ってソルダーを形成することによって前記開口を前記ソルダーで充填し、ここで前記開口の中の前記ソルダーは前記導電性材料層と電気的につながる、
工程を含む方法。 - 前記ソルダー湿潤材料は、5ミクロンから7ミクロンの厚さを有する、請求項4に記載の方法。
- 前記プロセスは、反応室の中で、前記金属窒化物の金属を含む第一の先駆物質と、前記金属窒化物の窒素を含む第二の先駆物質を用いて行われ、また前記プロセスにおいて、前記第一および第二の先駆物質が異なる時間間隔および実質的に互いに相対的に重なり合わない時間間隔で前記反応室の中に供給される、請求項4または請求項5に記載の方法。
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US10/784,074 US6943106B1 (en) | 2004-02-20 | 2004-02-20 | Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling |
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PCT/US2005/006116 WO2005083778A1 (en) | 2004-02-20 | 2005-02-18 | Methods of fabricating interconnects for semiconductor components |
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JP5966618B2 (ja) * | 2012-05-28 | 2016-08-10 | 東京エレクトロン株式会社 | 成膜方法 |
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US20050186777A1 (en) | 2005-08-25 |
US7410898B2 (en) | 2008-08-12 |
DE602005025194D1 (de) | 2011-01-20 |
SG166786A1 (en) | 2010-12-29 |
US20050186790A1 (en) | 2005-08-25 |
EP1719168A1 (en) | 2006-11-08 |
KR100821764B1 (ko) | 2008-04-14 |
SG166787A1 (en) | 2010-12-29 |
CN100536105C (zh) | 2009-09-02 |
JP2007523498A (ja) | 2007-08-16 |
SG131951A1 (en) | 2007-05-28 |
KR20060111708A (ko) | 2006-10-27 |
US6943106B1 (en) | 2005-09-13 |
EP1719168B1 (en) | 2010-12-08 |
WO2005083778A1 (en) | 2005-09-09 |
US7071098B2 (en) | 2006-07-04 |
US20070141835A1 (en) | 2007-06-21 |
US20050186770A1 (en) | 2005-08-25 |
US7189642B2 (en) | 2007-03-13 |
CN1922726A (zh) | 2007-02-28 |
SG131950A1 (en) | 2007-05-28 |
ATE491227T1 (de) | 2010-12-15 |
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