JP2010530474A5 - - Google Patents

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Publication number
JP2010530474A5
JP2010530474A5 JP2009553506A JP2009553506A JP2010530474A5 JP 2010530474 A5 JP2010530474 A5 JP 2010530474A5 JP 2009553506 A JP2009553506 A JP 2009553506A JP 2009553506 A JP2009553506 A JP 2009553506A JP 2010530474 A5 JP2010530474 A5 JP 2010530474A5
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JP
Japan
Prior art keywords
group
iii
thin film
precursor
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009553506A
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English (en)
Japanese (ja)
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JP2010530474A (ja
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Publication date
Priority claimed from KR1020070024682A external-priority patent/KR100857227B1/ko
Application filed filed Critical
Publication of JP2010530474A publication Critical patent/JP2010530474A/ja
Publication of JP2010530474A5 publication Critical patent/JP2010530474A5/ja
Ceased legal-status Critical Current

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JP2009553506A 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるi−iii−vi2化合物薄膜の製造方法 Ceased JP2010530474A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070024682A KR100857227B1 (ko) 2007-03-13 2007-03-13 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법
PCT/KR2008/001041 WO2008111738A1 (en) 2007-03-13 2008-02-22 Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process

Publications (2)

Publication Number Publication Date
JP2010530474A JP2010530474A (ja) 2010-09-09
JP2010530474A5 true JP2010530474A5 (enExample) 2010-10-21

Family

ID=39759657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009553506A Ceased JP2010530474A (ja) 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるi−iii−vi2化合物薄膜の製造方法

Country Status (6)

Country Link
US (1) US20100098856A1 (enExample)
EP (1) EP2126964A1 (enExample)
JP (1) JP2010530474A (enExample)
KR (1) KR100857227B1 (enExample)
CN (1) CN101632154B (enExample)
WO (1) WO2008111738A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982475B1 (ko) * 2008-09-29 2010-09-15 주식회사 쎄믹스 광 흡수용 화합물 박막 제조방법
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
KR101071545B1 (ko) * 2008-12-30 2011-10-11 주식회사 메카로닉스 Cigs 박막 제조방법
EP2530728B1 (en) * 2010-01-29 2018-01-31 Kyocera Corporation Method for manufacturing a semiconductor layer, method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution
CN102634776B (zh) * 2012-05-03 2014-03-12 徐明生 一种连续制备二维纳米薄膜的化学气相沉积设备
WO2017122842A1 (ko) * 2016-01-13 2017-07-20 주식회사 메카로 Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법
JP6842035B2 (ja) * 2016-12-19 2021-03-17 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法
CN115612484B (zh) * 2017-02-28 2024-08-30 国立大学法人东海国立大学机构 半导体纳米粒子及其制造方法、以及发光器件
JP7070826B2 (ja) * 2017-02-28 2022-05-18 国立大学法人東海国立大学機構 半導体ナノ粒子およびその製造方法ならびに発光デバイス
US20200082995A1 (en) * 2018-09-06 2020-03-12 Ascent Solar Technologies, Inc. Chalcopyrite-perovskite pn-junction thin-film photovoltaic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144014A (ja) * 1998-11-06 2000-05-26 Asahi Chem Ind Co Ltd 化合物半導体薄膜の形成方法
US6992202B1 (en) * 2002-10-31 2006-01-31 Ohio Aerospace Institute Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
WO2005010999A1 (en) * 2003-07-26 2005-02-03 In-Solar-Tech Co., Ltd. Method for manufacturing absorber layers for solar cell
KR100495924B1 (ko) * 2003-07-26 2005-06-16 (주)인솔라텍 태양전지 흡수층의 제조 방법
KR100495925B1 (ko) * 2005-01-12 2005-06-17 (주)인솔라텍 태양전지용 광흡수층 및 그 제조 방법
KR100810730B1 (ko) * 2006-06-19 2008-03-07 (주)인솔라텍 태양전지용 광흡수층의 제조방법

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