JP2008502680A5 - - Google Patents
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- JP2008502680A5 JP2008502680A5 JP2007516461A JP2007516461A JP2008502680A5 JP 2008502680 A5 JP2008502680 A5 JP 2008502680A5 JP 2007516461 A JP2007516461 A JP 2007516461A JP 2007516461 A JP2007516461 A JP 2007516461A JP 2008502680 A5 JP2008502680 A5 JP 2008502680A5
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- Prior art keywords
- group
- cycloalkyl
- alkyl
- aryl
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000000753 cycloalkyl group Chemical group 0.000 claims 49
- 229910052739 hydrogen Inorganic materials 0.000 claims 48
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 45
- 125000003118 aryl group Chemical group 0.000 claims 41
- 150000001875 compounds Chemical class 0.000 claims 31
- 239000012691 Cu precursor Substances 0.000 claims 28
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims 24
- 238000000034 method Methods 0.000 claims 16
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical group [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 claims 12
- 239000002243 precursor Substances 0.000 claims 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 9
- 239000000203 mixture Substances 0.000 claims 9
- 229910052715 tantalum Inorganic materials 0.000 claims 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 8
- 239000010949 copper Substances 0.000 claims 8
- 229910052802 copper Inorganic materials 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 7
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 7
- 239000007787 solid Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 6
- 239000002904 solvent Substances 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 5
- 239000007788 liquid Substances 0.000 claims 5
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 4
- 238000009472 formulation Methods 0.000 claims 4
- 150000002431 hydrogen Chemical class 0.000 claims 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 4
- 238000001704 evaporation Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 claims 2
- RMSGQZDGSZOJMU-UHFFFAOYSA-N 1-butyl-2-phenylbenzene Chemical group CCCCC1=CC=CC=C1C1=CC=CC=C1 RMSGQZDGSZOJMU-UHFFFAOYSA-N 0.000 claims 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- LIZIAPBBPRPPLV-UHFFFAOYSA-N niobium silicon Chemical compound [Si].[Nb] LIZIAPBBPRPPLV-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000006200 vaporizer Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/869,532 US7166732B2 (en) | 2004-06-16 | 2004-06-16 | Copper (I) compounds useful as deposition precursors of copper thin films |
| PCT/US2005/008416 WO2006009590A1 (en) | 2004-06-16 | 2005-03-14 | Copper (i) compounds useful as deposition precursors of copper thin films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008502680A JP2008502680A (ja) | 2008-01-31 |
| JP2008502680A5 true JP2008502680A5 (enExample) | 2008-05-08 |
Family
ID=35480908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007516461A Pending JP2008502680A (ja) | 2004-06-16 | 2005-03-14 | 銅薄膜の堆積前駆体として有用な銅（ｉ）化合物 |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US7166732B2 (enExample) |
| EP (1) | EP1765834A4 (enExample) |
| JP (1) | JP2008502680A (enExample) |
| KR (2) | KR101224316B1 (enExample) |
| CN (1) | CN101084229A (enExample) |
| IL (1) | IL180072A0 (enExample) |
| TW (1) | TWI397531B (enExample) |
| WO (1) | WO2006009590A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
| US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
| KR101437250B1 (ko) * | 2002-11-15 | 2014-10-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
| US7396949B2 (en) * | 2003-08-19 | 2008-07-08 | Denk Michael K | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
| WO2009105668A1 (en) * | 2008-02-20 | 2009-08-27 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
| US7166732B2 (en) | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
| US20060102895A1 (en) * | 2004-11-16 | 2006-05-18 | Hendrix Bryan C | Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures |
| US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
| US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
| US20090162550A1 (en) * | 2006-06-02 | 2009-06-25 | Advanced Technology Materials, Inc. | Copper (i) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper |
| US7547631B2 (en) * | 2006-07-31 | 2009-06-16 | Rohm And Haas Electronic Materials Llc | Organometallic compounds |
| US7488435B2 (en) * | 2006-08-07 | 2009-02-10 | E. I. Du Pont De Nemours And Company | Copper(I) complexes and processes for deposition of copper films by atomic layer deposition |
| JP5320295B2 (ja) | 2006-11-02 | 2013-10-23 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体 |
| US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
| US7964746B2 (en) * | 2007-03-30 | 2011-06-21 | Advanced Technology Materials, Inc. | Copper precursors for CVD/ALD/digital CVD of copper metal films |
| KR101629965B1 (ko) * | 2007-04-09 | 2016-06-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 구리 배선용 코발트 질화물층 및 이의 제조방법 |
| US8142847B2 (en) * | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
| US20100209610A1 (en) * | 2007-07-16 | 2010-08-19 | Advanced Technology Materials, Inc. | Group iv complexes as cvd and ald precursors for forming metal-containing thin films |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| JP5650880B2 (ja) * | 2007-10-31 | 2015-01-07 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 非晶質Ｇｅ／Ｔｅ蒸着方法 |
| US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| FR2929449A1 (fr) * | 2008-03-28 | 2009-10-02 | Stmicroelectronics Tours Sas S | Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat |
| US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
| US20110124182A1 (en) * | 2009-11-20 | 2011-05-26 | Advanced Techology Materials, Inc. | System for the delivery of germanium-based precursor |
| WO2011119175A1 (en) | 2010-03-26 | 2011-09-29 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| WO2011146913A2 (en) | 2010-05-21 | 2011-11-24 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| US20130084407A1 (en) * | 2011-09-29 | 2013-04-04 | American Air Liquide, Inc. | Plasma-enhanced deposition of copper-containing films for various applications using amidinate copper precursors |
| WO2014070682A1 (en) | 2012-10-30 | 2014-05-08 | Advaned Technology Materials, Inc. | Double self-aligned phase change memory device structure |
| KR102276421B1 (ko) * | 2013-11-29 | 2021-07-12 | 기소세쵸 가부시키가이샤 | 구리계 막 형성방법 |
| EP3539973A4 (en) | 2016-11-08 | 2020-05-06 | Adeka Corporation | COMPOUND, STARTING MATERIAL FOR THIN FILM FORMATION, METHOD FOR PRODUCING THIN FILM, AND AMIDINE COMPOUND |
| CN106498361B (zh) * | 2016-11-22 | 2019-03-19 | 江南大学 | 一种以肼类为还原剂单原子层沉积技术生长金属Cu的方法 |
| KR102744268B1 (ko) | 2017-10-14 | 2024-12-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Beol 인터커넥트를 위한 고온 pvd 구리 증착을 이용한 ald 구리의 집적 |
| KR20240141817A (ko) * | 2022-02-03 | 2024-09-27 | 엔테그리스, 아이엔씨. | 고 전도성 금속 필름을 선택적으로 침착시키는 방법 |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB750604A (en) * | 1952-02-26 | 1956-06-20 | James Anderson & Company Colou | Colouring materials of the anthraquinone series |
| US2839421A (en) | 1955-04-06 | 1958-06-17 | Du Pont | An alkoxy aluminum chelate, a dispersion of it in an organic liquid and a water repellant porous object |
| GB976573A (en) | 1959-12-30 | 1964-11-25 | Union Carbide Corp | Improvements in and relating to metal plating |
| US3076834A (en) | 1960-03-04 | 1963-02-05 | Dow Chemical Co | Chelate-phenol adducts |
| US3288829A (en) | 1961-01-19 | 1966-11-29 | Ethyl Corp | Process for preparing cyclopentadienyl group vb and vib metal hydrides |
| US3356527A (en) | 1964-04-23 | 1967-12-05 | Ross W Moshier | Vapor-plating metals from fluorocarbon keto metal compounds |
| US3437516A (en) | 1966-04-28 | 1969-04-08 | Us Air Force | Vapor deposition from perfluoroorganometallic compounds |
| US3594219A (en) * | 1969-02-24 | 1971-07-20 | United Aircraft Corp | Process of forming aluminide coatings on nickel and cobalt base superalloys |
| US3594216A (en) | 1969-06-19 | 1971-07-20 | Westinghouse Electric Corp | Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate |
| US4147556A (en) | 1972-01-12 | 1979-04-03 | Ppg Industries, Inc. | Nonflammable beta diketonate composition |
| US3988332A (en) | 1974-05-20 | 1976-10-26 | E. I. Du Pont De Nemours And Company | Hydrocarbylidene compounds of niobium and tantalum |
| US4529427A (en) | 1977-05-19 | 1985-07-16 | At&T Bell Laboratories | Method for making low-loss optical waveguides on an industrial scale |
| US4401474A (en) | 1979-12-03 | 1983-08-30 | Ppg Industries, Inc. | Pyrolytic coating reactant for defect and durability control |
| US4281037A (en) | 1980-08-08 | 1981-07-28 | Dap, Inc. | Cleaning and priming composition containing titanium acetylacetonate and method |
| JPS58203443A (ja) | 1982-05-24 | 1983-11-26 | Hitachi Ltd | ホトマスクの白点欠陥修正用組成物 |
| JPS60140880A (ja) | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
| FR2575936B1 (fr) | 1985-01-15 | 1987-02-13 | Rhone Poulenc Spec Chim | Procede de purification de solutions aqueuses de sels de terres rares par extraction liquide-liquide |
| US4898842A (en) | 1986-03-03 | 1990-02-06 | International Business Machines Corporation | Organometallic-derived cordierite and other compounds comprising oxides of silicon |
| JP2729373B2 (ja) | 1987-01-07 | 1998-03-18 | 東京応化工業 株式会社 | 金属酸化膜形成用塗布液 |
| US5034372A (en) | 1987-12-07 | 1991-07-23 | Mitsubishi Denki Kabushiki Kaisha | Plasma based method for production of superconductive oxide layers |
| JP2615469B2 (ja) | 1988-04-21 | 1997-05-28 | 松下電器産業株式会社 | 金属硫化物薄膜の製造方法 |
| US5130172A (en) * | 1988-10-21 | 1992-07-14 | The Regents Of The University Of California | Low temperature organometallic deposition of metals |
| US5094701A (en) | 1990-03-30 | 1992-03-10 | Air Products And Chemicals, Inc. | Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same |
| US5120703A (en) | 1990-04-17 | 1992-06-09 | Alfred University | Process for preparing oxide superconducting films by radio-frequency generated aerosol-plasma deposition in atmosphere |
| US5711816A (en) * | 1990-07-06 | 1998-01-27 | Advanced Technolgy Materials, Inc. | Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same |
| US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
| US6110529A (en) * | 1990-07-06 | 2000-08-29 | Advanced Tech Materials | Method of forming metal films on a substrate by chemical vapor deposition |
| US5820664A (en) * | 1990-07-06 | 1998-10-13 | Advanced Technology Materials, Inc. | Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same |
| US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
| US7323581B1 (en) * | 1990-07-06 | 2008-01-29 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
| US5362328A (en) * | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
| US5840897A (en) | 1990-07-06 | 1998-11-24 | Advanced Technology Materials, Inc. | Metal complex source reagents for chemical vapor deposition |
| US5453494A (en) * | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
| US5280012A (en) * | 1990-07-06 | 1994-01-18 | Advanced Technology Materials Inc. | Method of forming a superconducting oxide layer by MOCVD |
| US5220044A (en) | 1990-10-24 | 1993-06-15 | International Business Machines Corporation | Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films |
| US5096737A (en) | 1990-10-24 | 1992-03-17 | International Business Machines Corporation | Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films |
| DE4039449A1 (de) | 1990-12-11 | 1992-06-17 | Bayer Ag | Verfahren zur herstellung eines kupfer-i-formamidin-komplexes |
| US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
| US5144049A (en) * | 1991-02-04 | 1992-09-01 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
| US5187300A (en) | 1991-02-04 | 1993-02-16 | Air Products And Chemicals, Inc. | Volatile precursors for copper CVD |
| US5085731A (en) * | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
| US5165960A (en) | 1991-07-29 | 1992-11-24 | Ford Motor Company | Deposition of magnesium fluoride films |
| WO1993021450A1 (de) | 1992-04-09 | 1993-10-28 | Thore Rabe | Verfahren zur herstellung eines hülsenförmigen gleitlagers und nach diesem verfahren hergestelltes gleitlager |
| US5376409B1 (en) | 1992-12-21 | 1997-06-03 | Univ New York State Res Found | Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials |
| US5322712A (en) * | 1993-05-18 | 1994-06-21 | Air Products And Chemicals, Inc. | Process for improved quality of CVD copper films |
| US5412129A (en) | 1994-06-17 | 1995-05-02 | Dicarolis; Stephen A. | Stabilization of precursors for thin film deposition |
| US5591483A (en) | 1994-08-31 | 1997-01-07 | Wayne State University | Process for the preparation of metal nitride coatings from single source precursors |
| US5679815A (en) | 1994-09-16 | 1997-10-21 | Advanced Technology Materials, Inc. | Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same |
| JPH08176224A (ja) | 1994-12-27 | 1996-07-09 | Sumitomo Chem Co Ltd | エチレン−α−オレフィン共重合体の製造方法 |
| US6344079B1 (en) * | 1995-03-31 | 2002-02-05 | Advanced Technology Materials, Inc. | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition |
| US6214105B1 (en) * | 1995-03-31 | 2001-04-10 | Advanced Technology Materials, Inc. | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition |
| US5919522A (en) * | 1995-03-31 | 1999-07-06 | Advanced Technology Materials, Inc. | Growth of BaSrTiO3 using polyamine-based precursors |
| US6444264B2 (en) * | 1995-03-31 | 2002-09-03 | Advanced Technology Materials, Inc. | Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions |
| US5916359A (en) * | 1995-03-31 | 1999-06-29 | Advanced Technology Materials, Inc. | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition |
| US5783716A (en) * | 1996-06-28 | 1998-07-21 | Advanced Technology Materials, Inc. | Platinum source compositions for chemical vapor deposition of platinum |
| KR0179797B1 (ko) | 1995-12-29 | 1999-04-15 | 문정환 | 바이어스 전압이 인가된 Cu 박막 형성방법 |
| US5668054A (en) | 1996-01-11 | 1997-09-16 | United Microelectronics Corporation | Process for fabricating tantalum nitride diffusion barrier for copper matallization |
| US5744192A (en) | 1996-11-08 | 1998-04-28 | Sharp Microelectronics Technology, Inc. | Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS |
| US5972743A (en) * | 1996-12-03 | 1999-10-26 | Advanced Technology Materials, Inc. | Precursor compositions for ion implantation of antimony and ion implantation process utilizing same |
| US6090960A (en) | 1997-01-07 | 2000-07-18 | Sharp Laboratories Of America, Inc. | Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same |
| US5767301A (en) | 1997-01-21 | 1998-06-16 | Sharp Microelectronics Technology, Inc. | Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper |
| US6117571A (en) * | 1997-03-28 | 2000-09-12 | Advanced Technology Materials, Inc. | Compositions and method for forming doped A-site deficient thin-film manganate layers on a substrate |
| US5902639A (en) * | 1997-03-31 | 1999-05-11 | Advanced Technology Materials, Inc | Method of forming bismuth-containing films by using bismuth amide compounds |
| US6153519A (en) | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
| US5932363A (en) * | 1997-10-02 | 1999-08-03 | Xerox Corporation | Electroluminescent devices |
| US6015917A (en) | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
| JP2000007719A (ja) * | 1998-06-19 | 2000-01-11 | Sekisui Chem Co Ltd | 銅化合物を用いた重合体の製造方法 |
| US6355562B1 (en) * | 1998-07-01 | 2002-03-12 | Advanced Technology Materials, Inc. | Adhesion promotion method for CVD copper metallization in IC applications |
| US6102993A (en) | 1998-08-03 | 2000-08-15 | Advanced Technology Materials, Inc. | Copper precursor composition and process for manufacture of microelectronic device structures |
| KR20000013302A (ko) | 1998-08-06 | 2000-03-06 | 최형수 | 화학 증착법을 위한 유기 구리 전구체 |
| US6037001A (en) | 1998-09-18 | 2000-03-14 | Gelest, Inc. | Method for the chemical vapor deposition of copper-based films |
| US5994571A (en) | 1998-11-10 | 1999-11-30 | Sharp Laboratories Of America, Inc. | Substituted ethylene precursor and synthesis method |
| US6086779A (en) * | 1999-03-01 | 2000-07-11 | Mcgean-Rohco, Inc. | Copper etching compositions and method for etching copper |
| US6099903A (en) | 1999-05-19 | 2000-08-08 | Research Foundation Of State University Of New York | MOCVD processes using precursors based on organometalloid ligands |
| US6337148B1 (en) * | 1999-05-25 | 2002-01-08 | Advanced Technology Materials, Inc. | Copper source reagent compositions, and method of making and using same for microelectronic device structures |
| US6110530A (en) | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
| US6269979B1 (en) | 1999-10-05 | 2001-08-07 | Charles Dumont | Multi-compartmented mixing dispenser |
| US6589329B1 (en) * | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
| US6417369B1 (en) * | 2000-03-13 | 2002-07-09 | Advanced Technology Materials, Inc. | Pyrazolate copper complexes, and MOCVD of copper using same |
| US20020013487A1 (en) | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
| JP3963078B2 (ja) | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | ターシャリーアミルイミドトリス（ジメチルアミド）タンタルとその製造方法及びそれを用いたｍｏｃｖｄ用原料溶液並びにそれを用いた窒化タンタル膜の形成方法 |
| US6576293B2 (en) | 2001-03-26 | 2003-06-10 | Sharp Laboratories Of America, Inc. | Method to improve copper thin film adhesion to metal nitride substrates by the addition of water |
| US6579793B2 (en) | 2001-03-27 | 2003-06-17 | Sharp Laboratories Of America, Inc. | Method of achieving high adhesion of CVD copper thin films on TaN Substrates |
| WO2003072499A1 (en) | 2002-02-28 | 2003-09-04 | Japan Science And Technology Agency | Titania nanosheet alignment thin film, process for producing the same and article including the titania nanosheet alignment thin film |
| US6878641B2 (en) * | 2002-10-01 | 2005-04-12 | Advanced Technology Materials, Inc. | Composition and chemical vapor deposition method for forming organic low k dielectric films |
| KR101437250B1 (ko) | 2002-11-15 | 2014-10-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
| US6989457B2 (en) * | 2003-01-16 | 2006-01-24 | Advanced Technology Materials, Inc. | Chemical vapor deposition precursors for deposition of tantalum-based materials |
| US20040215030A1 (en) * | 2003-04-22 | 2004-10-28 | Norman John Anthony Thomas | Precursors for metal containing films |
| US7396949B2 (en) * | 2003-08-19 | 2008-07-08 | Denk Michael K | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
| US6822107B1 (en) * | 2003-08-19 | 2004-11-23 | Advanced Technology Materials, Inc. | Chemical vapor deposition precursors for deposition of copper |
| US6960675B2 (en) * | 2003-10-14 | 2005-11-01 | Advanced Technology Materials, Inc. | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
| US7285308B2 (en) * | 2004-02-23 | 2007-10-23 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
| US7166732B2 (en) | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
| WO2006012052A2 (en) * | 2004-06-25 | 2006-02-02 | Arkema, Inc. | Amidinate ligand containing chemical vapor deposition precursors |
| US20060102895A1 (en) | 2004-11-16 | 2006-05-18 | Hendrix Bryan C | Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures |
| US20070281476A1 (en) * | 2006-06-02 | 2007-12-06 | Lavoie Adrien R | Methods for forming thin copper films and structures formed thereby |
| US7638645B2 (en) * | 2006-06-28 | 2009-12-29 | President And Fellows Of Harvard University | Metal (IV) tetra-amidinate compounds and their use in vapor deposition |
-
2004
- 2004-06-16 US US10/869,532 patent/US7166732B2/en not_active Expired - Lifetime
-
2005
- 2005-03-14 WO PCT/US2005/008416 patent/WO2006009590A1/en not_active Ceased
- 2005-03-14 JP JP2007516461A patent/JP2008502680A/ja active Pending
- 2005-03-14 EP EP05725521A patent/EP1765834A4/en not_active Withdrawn
- 2005-03-14 CN CNA2005800235472A patent/CN101084229A/zh active Pending
- 2005-03-14 KR KR1020067027596A patent/KR101224316B1/ko not_active Expired - Fee Related
- 2005-03-14 KR KR1020127022046A patent/KR20120105057A/ko not_active Withdrawn
- 2005-04-11 TW TW094111308A patent/TWI397531B/zh not_active IP Right Cessation
- 2005-06-09 US US11/149,045 patent/US7241912B2/en not_active Expired - Lifetime
-
2006
- 2006-12-14 IL IL180072A patent/IL180072A0/en unknown
-
2007
- 2007-01-23 US US11/626,363 patent/US7371880B2/en not_active Expired - Lifetime
-
2008
- 2008-05-12 US US12/119,362 patent/US7531031B2/en not_active Expired - Fee Related
-
2009
- 2009-05-11 US US12/464,088 patent/US20100133689A1/en not_active Abandoned
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