KR101224316B1 - 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물 - Google Patents

구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물 Download PDF

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KR101224316B1
KR101224316B1 KR1020067027596A KR20067027596A KR101224316B1 KR 101224316 B1 KR101224316 B1 KR 101224316B1 KR 1020067027596 A KR1020067027596 A KR 1020067027596A KR 20067027596 A KR20067027596 A KR 20067027596A KR 101224316 B1 KR101224316 B1 KR 101224316B1
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copper
precursor
alkyl
group
aryl
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KR20070029758A (ko
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총잉 주
알렉산더 보로비크
토마스 에이치 바움
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어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020067027596A 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물 Expired - Fee Related KR101224316B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/869,532 US7166732B2 (en) 2004-06-16 2004-06-16 Copper (I) compounds useful as deposition precursors of copper thin films
US10/869,532 2004-06-16
PCT/US2005/008416 WO2006009590A1 (en) 2004-06-16 2005-03-14 Copper (i) compounds useful as deposition precursors of copper thin films

Related Child Applications (1)

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KR1020127022046A Division KR20120105057A (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물

Publications (2)

Publication Number Publication Date
KR20070029758A KR20070029758A (ko) 2007-03-14
KR101224316B1 true KR101224316B1 (ko) 2013-01-18

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KR1020067027596A Expired - Fee Related KR101224316B1 (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물
KR1020127022046A Withdrawn KR20120105057A (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물

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KR1020127022046A Withdrawn KR20120105057A (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물

Country Status (8)

Country Link
US (5) US7166732B2 (enExample)
EP (1) EP1765834A4 (enExample)
JP (1) JP2008502680A (enExample)
KR (2) KR101224316B1 (enExample)
CN (1) CN101084229A (enExample)
IL (1) IL180072A0 (enExample)
TW (1) TWI397531B (enExample)
WO (1) WO2006009590A1 (enExample)

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US7396949B2 (en) * 2003-08-19 2008-07-08 Denk Michael K Class of volatile compounds for the deposition of thin films of metals and metal compounds
WO2009105668A1 (en) * 2008-02-20 2009-08-27 President And Fellows Of Harvard College Bicyclic guanidines, metal complexes thereof and their use in vapor deposition
US7166732B2 (en) 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
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US7964746B2 (en) * 2007-03-30 2011-06-21 Advanced Technology Materials, Inc. Copper precursors for CVD/ALD/digital CVD of copper metal films
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US8142847B2 (en) * 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
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JP5650880B2 (ja) * 2007-10-31 2015-01-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 非晶質Ｇｅ／Ｔｅ蒸着方法
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US20070116876A1 (en) 2007-05-24
US20050283012A1 (en) 2005-12-22
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US20080233276A1 (en) 2008-09-25
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