TWI397531B - 有效於作為銅薄膜沉積前驅體之銅（ｉ）化合物 - Google Patents

有效於作為銅薄膜沉積前驅體之銅（ｉ）化合物 Download PDF

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TWI397531B
TWI397531B TW094111308A TW94111308A TWI397531B TW I397531 B TWI397531 B TW I397531B TW 094111308 A TW094111308 A TW 094111308A TW 94111308 A TW94111308 A TW 94111308A TW I397531 B TWI397531 B TW I397531B
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蘇中因
波洛維克 亞歷山大
鮑姆 湯瑪斯
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羅門哈斯電子材料有限公司
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    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

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Description

有效於作為銅薄膜沉積前驅體之銅(I)化合物
本發明大致係關於新穎的銅(I)脒鹽及其之合成，及關於使用此新穎的銅前驅體於微電子裝置結構中製造銅電路之方法。
銅由於其之低電阻率、低接觸電阻、及透過降低RC時間延遲而增進裝置性能之能力，而成為供超大型積體(VLSI)裝置之金屬化用的較佳金屬。許多半導體裝置製造者採用銅金屬化於製造微電子晶片、薄膜記錄頭及包裝組件。
銅之化學氣相沉積(CVD)提供金屬化用的均勻覆蓋。原子層沉積(ALD)（其係改良的CVD製程）亦提供對於銅晶種層重要的均勻覆蓋。液態CVD前驅體及/或溶解於溶劑中之固態前驅物可將前驅體直接注入及/或液態傳送至CVD或ALD蒸發器單元中。可透過體積計量得到準確及精確的傳送速率，以於VLSI裝置之CVD或ALD金屬化過程中達到再現性。
許多含氟及/或氧之銅CVD前驅體可於市面購得，其包括(hfac)Cu(MHY)、(hfac)Cu（3－己炔）、(hfac)Cu(DMCOD)及(hfac)Cu(VTMS)，其中hfac＝1,1,1,5,5,5－六氟乙醯丙酮根、MHY＝2－甲基－1－己烯－3－炔、DMCOD＝二甲基環辛二烯、及VTMS＝乙烯基三甲基矽烷。
積體電路製造中之銅金屬化典型上利用位於銅層與下層結構之間的障壁層，以防止可能會由銅層與積體電路之其他部分之交互作用所產生的不利影響。習知利用相當多樣的障壁材料，其包括含金屬、金屬氮化物、金屬矽化物、及金屬矽氮化物之材料。範例的障壁材料包括氮化鈦、矽化鈦、氮化鉭、矽化鉭、矽氮化鉭、氮化鈮、矽氮化鈮、氮化鎢、及矽化鎢。在將(hfac)CuL型前驅體使用於銅金屬化的情況中，在障壁層與銅層之間形成界面層，其導致金屬化具有不良的黏著及高接觸電阻率。
當使用(hfac)CuL銅前驅體時伴隨形成含氧及/或氟之界面層而來之不良黏著及過高接觸電阻率的缺失係可歸因於同時包含氧及氟的hfac配位體。為克服此等缺失，於技藝中提供具有降低氧/氟基含量之銅前驅體將係一項重大進步。提供無氧特性之銅前驅體將尤其有利。
因此，本發明之一目的為提供新穎的缺氧（不含氧且不含氟）銅前驅體及配方，以及於積體電路及其他微電子裝置結構之製造中使用此種前驅體及配方形成銅之方法。
本發明大致係關於有效於基板上作為用於形成具有改良黏著之銅之源試劑之有利地具有無氧及無氟特性之銅(I)脒鹽化合物，及關於此種銅(I)脒鹽化合物之使用方法。
本發明之一態樣係關於一種化學式如下之銅前驅體化合物： 其中：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物（例如，－SiR3 ，其中R係獨立地選自由C1 －C6 烷基所組成之群）所組成之群；R3 係選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、矽烷基之烴基衍生物及NR4 R5 所組成之群，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物所組成之群；其限制條件為當R1 及R2 為異丙基時，R3 不為甲基。
在另一態樣中，本發明係關於一種銅前驅體配方，其包括：(a)化學式如下之銅前驅體化合物： 其中：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物所組成之群；R3 係選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、矽烷基之烴基衍生物及NR4 R5 所組成之群，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物所組成之群；(b)此前驅體化合物之溶劑組成物。
在又另一態樣中，本發明係關於一種將銅沉積於基板上之方法，其包括使化學式如下之銅前驅體揮發： 其中：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物所組成之群；R3 係選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、矽烷基之烴基衍生物及NR4 R5 所組成之群，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物所組成之群；其限制條件為當R1 及R2 為異丙基時，R3 不為甲基，以形成前驅體蒸氣，及使前驅體蒸氣與基板於高溫蒸氣分解條件下接觸，以將銅沉積於基板上。
本發明之其他態樣、特徵及具體例將可由隨後之揭示內容及隨附之申請專利範圍而更加明白。
本發明係關於供於基板上CVD或ALD形成銅薄膜用之新穎的銅(I)脒鹽前驅體，及關於此種前驅體之相關的使用方法。
脒鹽係大的單陰離子配位體，其具有以下的基礎化學結構：
在一態樣中，本發明提供一種化學式如下之化合物： 其中：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物（例如，－SiR3 ，其中R係獨立地選自由C1 －C6 烷基所組成之群）所組成之群；R3 係選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、矽烷基之烴基衍生物及NR4 R5 所組成之群，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 －C6 烷基、C3 －C7 環烷基、芳基、及矽烷基之烴基衍生物所組成之群；其限制條件為當R1 及R2 為異丙基時，R3 不為甲基。
化學式(1)之化合物有用於利用CVD或ALD方法，利用包括相關之溫度、壓力、濃度、流率及CVD技術的方法條件形成銅薄膜，該等方法條件係如可對於一定應用於技藝技能內容易地決定。
化學式(1)之較佳化合物包括2－異丙基－1,3－二異丙脒銅(I)： 及2－二甲胺基－1,3－二異丙脒銅(I)：
化學式(1)之化合物係根據以下方程式(2)及(3)容易地合成得：R1 －N＝C＝N－R2 ＋R3 Li → (R1 －N＝C(R3 )－N－R2 )－ Li＋ (2) 其如更完整說明於後文的實施例中。
在CVD或ALD用途中，使本發明之銅(I)前驅體揮發形成前驅體蒸氣，然後使其與基板在高溫蒸氣分解條件下接觸，以將銅沉積於基板上。
2－異丙基－1,3－二異丙脒銅(I)及2－二甲胺基－1,3－二異丙脒銅(I)皆為揮發性且熱安定，且其有用於CVD或ALD反應器中在還原環境沉積條件下使用作為銅CVD或ALD前驅體。可將固態前驅體溶解於有機溶劑中，且可使用液體傳送於將溶液計量至蒸發器中，以輸送至反應器。
更明確言之，及舉例來說，本發明之銅(I)脒鹽前驅體組成物可在半導體積體電路、薄膜電路、薄膜包裝組件及薄膜記錄頭線圈之銅互連線的形成過程中使用。為形成此等積體電路或薄膜電路，可利用具有形成於基板之上及/或之內之許多介電及導體層（多層物）的半導體基板。半導體基板可包括裸露基板或形成於裸露基板上之任何數目的組成層。
在本發明的廣義實行中，可使用銅(I)脒鹽前驅體於半導體基板上形成含銅層，以用於第一、第二、第三、或多個金屬化層中。此種銅層典型上被使用於需要低電阻率、高效能及/或高速電路路徑的電路位置。如於本文之背景段落中所論述，可在於半導體基板上形成銅層之前，將障壁層沉積或以其他方式形成於基板上。
接著可使用文中說明之銅前驅體組成物，使用CVD或ALD系統將銅沉積於晶圓上，此種系統係半導體製造技藝中所熟知。此外，可於CVD或ALD工具之上游或其內將水、產生水之化合物、或其他前驅體配方之輔助劑與銅前驅體混合。同樣地，可以類似的方式利用還原劑。
作為進一步的變化，當要將銅合金組成物沉積於基板上時，銅前驅體配方可包含其他的金屬源試劑材料或與其混合，或可將此等其他試劑材料個別蒸發並引入至沉積室中。
本發明之組成物可以各種方式傳送至CVD或ALD反應器。舉例來說，可利用液體傳送系統。或者，可使用結合的液體傳送及急速蒸發製程單元，諸如LDS300液體傳送及蒸發器單元（購自Advanced Technology Materials, Inc., Danbury, CT），以可體積傳送低揮發性材料，沒有前驅體之熱分解而獲致可再現的輸送及沉積。此等沒有熱分解之可再現之輸送及沉積的考量係提供商業上可接受之銅CVD或ALD製程的基本條件。
在液體傳送配方中，可使用呈純液體形態之液態的銅前驅體，或可將液態或固態銅前驅體以包含其之溶劑配方使用。因此，本發明之銅前驅體配方可包括如可能於指定最終應用中於基板上形成銅所期望且有利之適當特性的溶劑成分。適當的溶劑，例如，可包括烷溶劑，例如，己烷、庚烷、辛烷、戊烷，或芳基溶劑諸如苯或甲苯，胺及醯胺。可以實驗方式容易地測定特定溶劑組成物對於特定銅前驅體之效用，以選擇供所使用之特定銅前驅體之液體傳送蒸發及輸送用之適當的單成分或多成分溶劑介質。
在本發明之另一具體例中，可利用固體傳送系統，例如，使用ProE－Vap固體傳送及蒸發器單元（購自Advanced Technology Materials, Inc., Danbury, CT）。
可對本發明之前驅體組成物利用相當多樣的CVD或ALD方法條件。一般的方法條件可包括150－400℃之基板溫度範圍；0.05－5托爾(Torr)之壓力範圍；及在50至120℃之大約與蒸發器相同之溫度下在25－750 sccm下之氦、氫、氮、或氬之遞送氣體流量。
亦可利用本發明之方法及前驅體達成具有用電性質（低電阻率）及對障壁層（例如，由TiN或TaN形成）之良好黏著之銅薄膜的沉積。沉積薄膜之仿形度實際上可透過CVD或ALD技術達成，其以提供達成「實現」銅金屬化之途徑較佳。包括「急速」蒸發及使用如本文所揭示之銅前驅體化學之本發明的液體傳送方法可達到下一代的裝置幾何形體及尺寸，例如，65奈米線寬之仿形垂直互連。此等臨界尺寸之互連體的仿形沉積無法利用目前可資利用的物理沉積方法實現。因此，本發明之方法提供新一代裝置的可行途徑，且於技藝中具體實現實質的進步。
本發明之特徵及優點由以下之說明性及非限制性實施例作更完整展示。
[實施例1]2－異丙基－1,3－二異丙脒銅(I)之合成
於穩定氮氣流中進行反應。將須蘭克(Schlenk)燒瓶裝入6.3克之1,3－二異丙基碳二醯亞胺（(CH3 )2 CHN＝C＝NCH(CH3 )，49.9毫莫耳）及50毫升無水乙醚，並置於冰浴中。接著，將32毫升之異丙基鋰（1.6M乙醚溶液，51.2毫莫耳）逐滴加至在約0℃下之經磁石攪拌的混合物中。於添加完成後，將混合物於室溫下再多攪拌2小時。將混合物移至包含懸浮於50毫升乙醚中之6克CuCl（60.6毫莫耳）的另一燒瓶中。將此混合物於室溫下攪拌隔夜，然後弄乾。以戊烷（3×50毫升）萃取固體殘留物。於萃取之後，將戊烷濾液濃縮至稍微混濁。將飽和溶液置於－39℃下之冷凍器中，且以約60%之產率製得結晶產物。
圖1顯示2－異丙基－1, 3－二異丙脒銅(I)之1 H NMR(C6 D6 )，其具有以下的波峰：δ1.20(d, 6H,(CH 3 )2 CH－C)，1.23(br, 12H,(CH 3 )2 CH－N)，3.20(hept, 1H, CH)，3.45(br, 1H, CH)，3.95(br, 1H, CH)。
圖2顯示2－異丙基－1, 3－二異丙脒銅(I)之STA/DSC圖。熔融波峰係約160℃及殘留物係約19%。
圖3係2－異丙基－1, 3－二異丙脒銅(I)之美國橡樹嶺熱橢圓體繪圖(Oak Ridge Thermal Ellipsoid Plot, ORTEP)結構，其顯示化合物之二聚結構(dimeric structure)及30%機率熱橢圓體。
[實施例2]2－二甲胺基－1, 3－二異丙脒銅(I)之合成
將純的1, 3－二異丙基碳二醯亞胺（12.37克，98毫莫耳，15.2毫升）緩慢加至LiNMe2 （5克，98毫莫耳）溶於125毫升THF之溶液中。觀察到一些熱的產生。將反應混合物攪拌1小時。其後於乾燥箱中將9.7克之固態CuCl（98毫莫耳）加至反應混合物。將所得之呈綠色的懸浮液攪拌隔夜，及於真空中移除所有揮發物。將殘留物洗滌於150毫升之己烷中。將濾液於真空中濃縮並置放於冰箱中，藉此使純晶體成長隔夜。總產率為60%，且晶體之熔點為108 ℃。1 H NMR(C6 D6 )：δ3.42（七重線, 1H,J (H－H)＝6 Hz,CH (CH3 )2 ），2.55（單一線, 3H, N(CH 3 )2 ），1.30（雙重線, 6H,J (H－H)＝6 Hz, CH(CH 3 )2 ）。1 3 C NMR(C6 D6 )：δ171.95(Me2 NC(N(iPr))2 )，48.61(CH (CH3 )2 )，41.29(N(CH 3 )2 )，27.98(CH(CH 3 )2 )。
圖4顯示2－二甲胺基－1, 3－二異丙脒銅(I)之STA/DSC圖，其為揮發性具低於230℃之輸送溫度，且具有低於5%之殘留質量。
圖5係2－二甲胺基－1, 3－二異丙脒銅(I)之ORTEP結構，其顯示化合物於固態中之二聚結構。2.4152(17)埃之相當短的Cu－Cu距離可指示弱的金屬－金屬交互作用。平均Cu－N距離為1.875(3)埃，其與於類似化合物中所觀察到者相當類似。
雖然本發明已參照各種特定具體例說明於文中，但當明瞭本發明並不因此而受限，而係可延伸至及涵蓋如可由熟悉技藝人士所明瞭之各種其他修改及具體例。因此，本發明係應根據隨後之申請專利範圍作廣義地解釋及詮釋。
圖1係2－異丙基－1, 3－二異丙脒銅(I)之1 H－NMR圖。
圖2係2－異丙基－1, 3－二異丙脒銅(I)之同時的熱分析(STA)/示差掃描量熱(DSC)圖。
圖3係2－異丙基－1, 3－二異丙脒銅(I)之ORTEP結構。
圖4係2－二甲胺基－1, 3－二異丙脒銅(I)之STA/DSC圖。
圖5係2－二甲胺基－1, 3－二異丙脒銅(I)之ORTEP結構。

Claims (22)

  1. 一種具有化學式如下之銅前驅體化合物， 其中該銅前驅體化合物的特徵在於下列R1 、R2 與R3 成分的配置：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；R3 為NR4 R5 ，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組。
  2. 如申請專利範圍第1項所述之銅前驅體化合物，其中該銅前驅體化合物為2-二甲胺-1,3-二異丙脒銅(I)。
  3. 如申請專利範圍第1項所述之銅前驅體化合物，其中R1 及R2 為異丙基。
  4. 一種銅前驅體配方，包括：(a)具有化學式如下之一銅前驅體化合物， 其中該銅前驅體化合物的特徵在於下列R1 、R2 與R3 成分的配置：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；R3 為NR4 R5 ，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；以及(b)該前驅體化合物之一溶劑組成物。
  5. 如申請專利範圍第4項所述之銅前驅體配方，其中該溶劑組成物包含一有機溶劑。
  6. 如申請專利範圍第4項所述之銅前驅體配方，其中該溶劑組成物包含一溶劑，該溶劑係選自由C5 -C8 烷、芳基、胺及醯胺溶劑所組成之群組。
  7. 如申請專利範圍第4項所述之銅前驅體配方，其中該溶劑組成物包含一溶劑，該溶劑係選自由己烷、庚烷、辛烷、戊烷、苯、甲苯、及二甲基甲醯胺所組成之群組。
  8. 如申請專利範圍第4項所述之銅前驅體配方，其中該銅前驅體為2-二甲胺-1,3-二異丙脒銅(I)。
  9. 如申請專利範圍第4項所述之銅前驅體配方，其中R1 及R2 為異丙基。
  10. 一種將銅沉積於一基板上之方法，包括：(a)使具有化學式如下之一銅前驅體揮發， 其中該銅前驅體化合物的特徵在於下列R1 、R2 與R3 成分的配置：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；R3 為NR4 R5 ，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；以及(b)於高溫蒸氣分解條件下，使該前驅體蒸氣與該基板接觸，以將銅沉積於該基板上。
  11. 如申請專利範圍第10項所述之方法，其中該銅係於 化學氣相沉積條件下或於原子層沉積條件下沉積。
  12. 如申請專利範圍第10項所述之方法，其中該銅前驅體為2-二甲胺-1,3-二異丙脒銅(I)。
  13. 如申請專利範圍第10項所述之方法，其中該基板係為一障壁材料。
  14. 如申請專利範圍第13項所述之方法，其中該障壁材料包括一化合物，該化合物係選自由氮化鈦、矽化鈦、氮化鉭、矽化鉭、矽氮化鉭、氮化鈮、矽氮化鈮、氮化鎢、及矽化鎢所組成之群組。
  15. 一種將銅沉積於一基板上之方法，包括：(a)使一銅前驅體配方揮發，該配方包含：(i)具有化學式如下之銅前驅體化合物， 其中該銅前驅體化合物的特徵在於下列R1 、R2 與R3 成分的配置：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；R3 為NR4 R5 ，其中R4 及R5 可彼此相同或不同，且係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；以及(ii)該前驅體化合物之一溶劑組成物，以形成一前驅體蒸氣；以及(b)於高溫蒸氣分解條件下，使該前驅體蒸氣與該基板接觸，以將銅沉積於該基板上。
  16. 如申請專利範圍第15項所述之方法，其中該銅係於化學氣相沉積條件下或於原子層沉積條件下沉積。
  17. 一種將銅沉積於一基板上之方法，包括：使用一銅前驅體組成物，於該基板上執行銅蒸氣沉積，該銅前軀體組成物包含具有化學式如下之一銅前驅體， 其中：R1 及R2 可彼此相同或不同，且各係獨立地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組；以及R3 為NR4 R5 ，其中R4 及R5 可彼此相同或不同，且係獨立 地選自由H、C1 -C6 烷基、及C3 -C7 環烷基所組成之群組，其中該蒸氣沉積包含固體傳送或液體傳送，且其中當該蒸氣沉積包含液體傳送時，該銅前驅體組成物包含在一溶劑介質中的該銅前驅體，該溶劑介質包含一溶劑，該溶劑係選自由C5 -C8 烷基溶劑、胺以及醯胺所組成之群組。
  18. 如申請專利範圍第17項所述之方法，其中該銅蒸氣沉積包含化學氣相沉積或原子層沉積。
  19. 如申請專利範圍第17項所述之方法，其中該銅前驅體包含2-二甲胺-1,3-二異丙脒銅(I)。
  20. 如申請專利範圍第17項所述之方法，其中該銅前驅體組成物包含一輔助劑，該輔助劑係選自由水、產生水之化合物以及還原劑所組成之群組。
  21. 如申請專利範圍第17項所述之方法，其中該蒸氣沉積包含液體傳送，且該銅前驅體組成物包含在一溶劑介質中的該銅前驅體，該溶劑介質包含一溶劑，該溶劑係選自由C5 -C8 烷基溶劑、胺以及醯胺所組成之群組。
  22. 如申請專利範圍第17項所述之方法，其中該溶劑介質包含一溶劑，該溶劑係選自由己烷(hexane)、庚烷(heptane)、與辛烷(octane)所組成之群組。
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