IL180072A0 - Copper (i) compounds useful as deposition precursors of copper thin films - Google Patents

Copper (i) compounds useful as deposition precursors of copper thin films

Info

Publication number
IL180072A0
IL180072A0 IL180072A IL18007206A IL180072A0 IL 180072 A0 IL180072 A0 IL 180072A0 IL 180072 A IL180072 A IL 180072A IL 18007206 A IL18007206 A IL 18007206A IL 180072 A0 IL180072 A0 IL 180072A0
Authority
IL
Israel
Prior art keywords
copper
thin films
compounds useful
deposition precursors
copper thin
Prior art date
Application number
IL180072A
Other languages
English (en)
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35480908&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IL180072(A0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of IL180072A0 publication Critical patent/IL180072A0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
IL180072A 2004-06-16 2006-12-14 Copper (i) compounds useful as deposition precursors of copper thin films IL180072A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/869,532 US7166732B2 (en) 2004-06-16 2004-06-16 Copper (I) compounds useful as deposition precursors of copper thin films
PCT/US2005/008416 WO2006009590A1 (en) 2004-06-16 2005-03-14 Copper (i) compounds useful as deposition precursors of copper thin films

Publications (1)

Publication Number Publication Date
IL180072A0 true IL180072A0 (en) 2007-05-15

Family

ID=35480908

Family Applications (1)

Application Number Title Priority Date Filing Date
IL180072A IL180072A0 (en) 2004-06-16 2006-12-14 Copper (i) compounds useful as deposition precursors of copper thin films

Country Status (8)

Country Link
US (5) US7166732B2 (enExample)
EP (1) EP1765834A4 (enExample)
JP (1) JP2008502680A (enExample)
KR (2) KR101224316B1 (enExample)
CN (1) CN101084229A (enExample)
IL (1) IL180072A0 (enExample)
TW (1) TWI397531B (enExample)
WO (1) WO2006009590A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
KR101437250B1 (ko) * 2002-11-15 2014-10-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
US7396949B2 (en) * 2003-08-19 2008-07-08 Denk Michael K Class of volatile compounds for the deposition of thin films of metals and metal compounds
WO2009105668A1 (en) * 2008-02-20 2009-08-27 President And Fellows Of Harvard College Bicyclic guanidines, metal complexes thereof and their use in vapor deposition
US7166732B2 (en) 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US20090162550A1 (en) * 2006-06-02 2009-06-25 Advanced Technology Materials, Inc. Copper (i) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper
US7547631B2 (en) * 2006-07-31 2009-06-16 Rohm And Haas Electronic Materials Llc Organometallic compounds
US7488435B2 (en) * 2006-08-07 2009-02-10 E. I. Du Pont De Nemours And Company Copper(I) complexes and processes for deposition of copper films by atomic layer deposition
JP5320295B2 (ja) 2006-11-02 2013-10-23 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属薄膜のｃｖｄ／ａｌｄに有用なアンチモンおよびゲルマニウム錯体
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US7964746B2 (en) * 2007-03-30 2011-06-21 Advanced Technology Materials, Inc. Copper precursors for CVD/ALD/digital CVD of copper metal films
KR101629965B1 (ko) * 2007-04-09 2016-06-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 구리 배선용 코발트 질화물층 및 이의 제조방법
US8142847B2 (en) * 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
US20100209610A1 (en) * 2007-07-16 2010-08-19 Advanced Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
JP5650880B2 (ja) * 2007-10-31 2015-01-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 非晶質Ｇｅ／Ｔｅ蒸着方法
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
FR2929449A1 (fr) * 2008-03-28 2009-10-02 Stmicroelectronics Tours Sas S Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US20110124182A1 (en) * 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US20130084407A1 (en) * 2011-09-29 2013-04-04 American Air Liquide, Inc. Plasma-enhanced deposition of copper-containing films for various applications using amidinate copper precursors
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
KR102276421B1 (ko) * 2013-11-29 2021-07-12 기소세쵸 가부시키가이샤 구리계 막 형성방법
EP3539973A4 (en) 2016-11-08 2020-05-06 Adeka Corporation COMPOUND, STARTING MATERIAL FOR THIN FILM FORMATION, METHOD FOR PRODUCING THIN FILM, AND AMIDINE COMPOUND
CN106498361B (zh) * 2016-11-22 2019-03-19 江南大学 一种以肼类为还原剂单原子层沉积技术生长金属Cu的方法
KR102744268B1 (ko) 2017-10-14 2024-12-17 어플라이드 머티어리얼스, 인코포레이티드 Beol 인터커넥트를 위한 고온 pvd 구리 증착을 이용한 ald 구리의 집적
KR20240141817A (ko) * 2022-02-03 2024-09-27 엔테그리스, 아이엔씨. 고 전도성 금속 필름을 선택적으로 침착시키는 방법

Family Cites Families (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB750604A (en) * 1952-02-26 1956-06-20 James Anderson & Company Colou Colouring materials of the anthraquinone series
US2839421A (en) 1955-04-06 1958-06-17 Du Pont An alkoxy aluminum chelate, a dispersion of it in an organic liquid and a water repellant porous object
GB976573A (en) 1959-12-30 1964-11-25 Union Carbide Corp Improvements in and relating to metal plating
US3076834A (en) 1960-03-04 1963-02-05 Dow Chemical Co Chelate-phenol adducts
US3288829A (en) 1961-01-19 1966-11-29 Ethyl Corp Process for preparing cyclopentadienyl group vb and vib metal hydrides
US3356527A (en) 1964-04-23 1967-12-05 Ross W Moshier Vapor-plating metals from fluorocarbon keto metal compounds
US3437516A (en) 1966-04-28 1969-04-08 Us Air Force Vapor deposition from perfluoroorganometallic compounds
US3594219A (en) * 1969-02-24 1971-07-20 United Aircraft Corp Process of forming aluminide coatings on nickel and cobalt base superalloys
US3594216A (en) 1969-06-19 1971-07-20 Westinghouse Electric Corp Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate
US4147556A (en) 1972-01-12 1979-04-03 Ppg Industries, Inc. Nonflammable beta diketonate composition
US3988332A (en) 1974-05-20 1976-10-26 E. I. Du Pont De Nemours And Company Hydrocarbylidene compounds of niobium and tantalum
US4529427A (en) 1977-05-19 1985-07-16 At&T Bell Laboratories Method for making low-loss optical waveguides on an industrial scale
US4401474A (en) 1979-12-03 1983-08-30 Ppg Industries, Inc. Pyrolytic coating reactant for defect and durability control
US4281037A (en) 1980-08-08 1981-07-28 Dap, Inc. Cleaning and priming composition containing titanium acetylacetonate and method
JPS58203443A (ja) 1982-05-24 1983-11-26 Hitachi Ltd ホトマスクの白点欠陥修正用組成物
JPS60140880A (ja) 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
FR2575936B1 (fr) 1985-01-15 1987-02-13 Rhone Poulenc Spec Chim Procede de purification de solutions aqueuses de sels de terres rares par extraction liquide-liquide
US4898842A (en) 1986-03-03 1990-02-06 International Business Machines Corporation Organometallic-derived cordierite and other compounds comprising oxides of silicon
JP2729373B2 (ja) 1987-01-07 1998-03-18 東京応化工業 株式会社 金属酸化膜形成用塗布液
US5034372A (en) 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
JP2615469B2 (ja) 1988-04-21 1997-05-28 松下電器産業株式会社 金属硫化物薄膜の製造方法
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US5094701A (en) 1990-03-30 1992-03-10 Air Products And Chemicals, Inc. Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same
US5120703A (en) 1990-04-17 1992-06-09 Alfred University Process for preparing oxide superconducting films by radio-frequency generated aerosol-plasma deposition in atmosphere
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US7323581B1 (en) * 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US5362328A (en) * 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5840897A (en) 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5220044A (en) 1990-10-24 1993-06-15 International Business Machines Corporation Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films
US5096737A (en) 1990-10-24 1992-03-17 International Business Machines Corporation Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films
DE4039449A1 (de) 1990-12-11 1992-06-17 Bayer Ag Verfahren zur herstellung eines kupfer-i-formamidin-komplexes
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
US5144049A (en) * 1991-02-04 1992-09-01 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5187300A (en) 1991-02-04 1993-02-16 Air Products And Chemicals, Inc. Volatile precursors for copper CVD
US5085731A (en) * 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5165960A (en) 1991-07-29 1992-11-24 Ford Motor Company Deposition of magnesium fluoride films
WO1993021450A1 (de) 1992-04-09 1993-10-28 Thore Rabe Verfahren zur herstellung eines hülsenförmigen gleitlagers und nach diesem verfahren hergestelltes gleitlager
US5376409B1 (en) 1992-12-21 1997-06-03 Univ New York State Res Found Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
US5322712A (en) * 1993-05-18 1994-06-21 Air Products And Chemicals, Inc. Process for improved quality of CVD copper films
US5412129A (en) 1994-06-17 1995-05-02 Dicarolis; Stephen A. Stabilization of precursors for thin film deposition
US5591483A (en) 1994-08-31 1997-01-07 Wayne State University Process for the preparation of metal nitride coatings from single source precursors
US5679815A (en) 1994-09-16 1997-10-21 Advanced Technology Materials, Inc. Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
JPH08176224A (ja) 1994-12-27 1996-07-09 Sumitomo Chem Co Ltd エチレン−α−オレフィン共重合体の製造方法
US6344079B1 (en) * 1995-03-31 2002-02-05 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6214105B1 (en) * 1995-03-31 2001-04-10 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US5919522A (en) * 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
US6444264B2 (en) * 1995-03-31 2002-09-03 Advanced Technology Materials, Inc. Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US5916359A (en) * 1995-03-31 1999-06-29 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US5783716A (en) * 1996-06-28 1998-07-21 Advanced Technology Materials, Inc. Platinum source compositions for chemical vapor deposition of platinum
KR0179797B1 (ko) 1995-12-29 1999-04-15 문정환 바이어스 전압이 인가된 Cu 박막 형성방법
US5668054A (en) 1996-01-11 1997-09-16 United Microelectronics Corporation Process for fabricating tantalum nitride diffusion barrier for copper matallization
US5744192A (en) 1996-11-08 1998-04-28 Sharp Microelectronics Technology, Inc. Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS
US5972743A (en) * 1996-12-03 1999-10-26 Advanced Technology Materials, Inc. Precursor compositions for ion implantation of antimony and ion implantation process utilizing same
US6090960A (en) 1997-01-07 2000-07-18 Sharp Laboratories Of America, Inc. Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same
US5767301A (en) 1997-01-21 1998-06-16 Sharp Microelectronics Technology, Inc. Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper
US6117571A (en) * 1997-03-28 2000-09-12 Advanced Technology Materials, Inc. Compositions and method for forming doped A-site deficient thin-film manganate layers on a substrate
US5902639A (en) * 1997-03-31 1999-05-11 Advanced Technology Materials, Inc Method of forming bismuth-containing films by using bismuth amide compounds
US6153519A (en) 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US5932363A (en) * 1997-10-02 1999-08-03 Xerox Corporation Electroluminescent devices
US6015917A (en) 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
JP2000007719A (ja) * 1998-06-19 2000-01-11 Sekisui Chem Co Ltd 銅化合物を用いた重合体の製造方法
US6355562B1 (en) * 1998-07-01 2002-03-12 Advanced Technology Materials, Inc. Adhesion promotion method for CVD copper metallization in IC applications
US6102993A (en) 1998-08-03 2000-08-15 Advanced Technology Materials, Inc. Copper precursor composition and process for manufacture of microelectronic device structures
KR20000013302A (ko) 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6037001A (en) 1998-09-18 2000-03-14 Gelest, Inc. Method for the chemical vapor deposition of copper-based films
US5994571A (en) 1998-11-10 1999-11-30 Sharp Laboratories Of America, Inc. Substituted ethylene precursor and synthesis method
US6086779A (en) * 1999-03-01 2000-07-11 Mcgean-Rohco, Inc. Copper etching compositions and method for etching copper
US6099903A (en) 1999-05-19 2000-08-08 Research Foundation Of State University Of New York MOCVD processes using precursors based on organometalloid ligands
US6337148B1 (en) * 1999-05-25 2002-01-08 Advanced Technology Materials, Inc. Copper source reagent compositions, and method of making and using same for microelectronic device structures
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
US6269979B1 (en) 1999-10-05 2001-08-07 Charles Dumont Multi-compartmented mixing dispenser
US6589329B1 (en) * 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6417369B1 (en) * 2000-03-13 2002-07-09 Advanced Technology Materials, Inc. Pyrazolate copper complexes, and MOCVD of copper using same
US20020013487A1 (en) 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
JP3963078B2 (ja) 2000-12-25 2007-08-22 株式会社高純度化学研究所 ターシャリーアミルイミドトリス（ジメチルアミド）タンタルとその製造方法及びそれを用いたｍｏｃｖｄ用原料溶液並びにそれを用いた窒化タンタル膜の形成方法
US6576293B2 (en) 2001-03-26 2003-06-10 Sharp Laboratories Of America, Inc. Method to improve copper thin film adhesion to metal nitride substrates by the addition of water
US6579793B2 (en) 2001-03-27 2003-06-17 Sharp Laboratories Of America, Inc. Method of achieving high adhesion of CVD copper thin films on TaN Substrates
WO2003072499A1 (en) 2002-02-28 2003-09-04 Japan Science And Technology Agency Titania nanosheet alignment thin film, process for producing the same and article including the titania nanosheet alignment thin film
US6878641B2 (en) * 2002-10-01 2005-04-12 Advanced Technology Materials, Inc. Composition and chemical vapor deposition method for forming organic low k dielectric films
KR101437250B1 (ko) 2002-11-15 2014-10-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
US20040215030A1 (en) * 2003-04-22 2004-10-28 Norman John Anthony Thomas Precursors for metal containing films
US7396949B2 (en) * 2003-08-19 2008-07-08 Denk Michael K Class of volatile compounds for the deposition of thin films of metals and metal compounds
US6822107B1 (en) * 2003-08-19 2004-11-23 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of copper
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US7166732B2 (en) 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
WO2006012052A2 (en) * 2004-06-25 2006-02-02 Arkema, Inc. Amidinate ligand containing chemical vapor deposition precursors
US20060102895A1 (en) 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
US20070281476A1 (en) * 2006-06-02 2007-12-06 Lavoie Adrien R Methods for forming thin copper films and structures formed thereby
US7638645B2 (en) * 2006-06-28 2009-12-29 President And Fellows Of Harvard University Metal (IV) tetra-amidinate compounds and their use in vapor deposition

Also Published As

Publication number Publication date
US7531031B2 (en) 2009-05-12
TWI397531B (zh) 2013-06-01
US7371880B2 (en) 2008-05-13
EP1765834A4 (en) 2010-10-06
US7241912B2 (en) 2007-07-10
WO2006009590A1 (en) 2006-01-26
KR20070029758A (ko) 2007-03-14
KR20120105057A (ko) 2012-09-24
US20070116876A1 (en) 2007-05-24
US20050283012A1 (en) 2005-12-22
EP1765834A1 (en) 2007-03-28
US20050281952A1 (en) 2005-12-22
US20080233276A1 (en) 2008-09-25
KR101224316B1 (ko) 2013-01-18
CN101084229A (zh) 2007-12-05
JP2008502680A (ja) 2008-01-31
US7166732B2 (en) 2007-01-23
US20100133689A1 (en) 2010-06-03
TW200606168A (en) 2006-02-16

Similar Documents

Publication Publication Date Title
IL180072A0 (en) Copper (i) compounds useful as deposition precursors of copper thin films
GB0323295D0 (en) Deposition of thin films
GB2405404B (en) Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
GB2440082B (en) Proppants useful for prevention of scale deposition
TWI319442B (en) Method of depositing thin layer using atomic layer deposition
TWI346982B (en) Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
SG135953A1 (en) Germanium compounds
TWI347651B (en) Atomic layer deposition of hafnium-based high-k dielectric
AU2003207281A1 (en) Coating compositions for forming insulating thin films
AU2003210599A1 (en) Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition
EP2099068A4 (en) PROCESS FOR PRODUCING METALLIC ALUMINUM NITRIDE SUBSTRATE
SG139723A1 (en) Precursors having open ligands for ruthenium containing films deposition
IL180768A0 (en) Copper (ii) complexes for deposition of copper films by atomic layer deposition
ZA200700807B (en) Composition for coating of aluminum
GB2429202B (en) Deposition of layers on substrates
SG112086A1 (en) Etching solution composition for metal films
EP1843988A4 (en) OPTIMIZED COMPOSITIONS OF (RE) BA2CU3O7-D THIN FILM SUPERCONDUCTORS FOR RF PROPERTIES
ZA200900708B (en) Use of WNT5A for inhibiting scarring
GB0715769D0 (en) Deposition of polymeric films
GB2444143B (en) Apparatus of supplying organometallic compound
GB0306027D0 (en) Precursors for chemical vapour deposition
GB0512137D0 (en) Deposition of films at low temperatures
GB0330236D0 (en) Deposition of films at low temperatures
AU2006902334A0 (en) Method of mounting objects for chemical vapour deposition
HK1124259A (en) Use of wnt5a for inhibiting scarring