CN102634776B - 一种连续制备二维纳米薄膜的化学气相沉积设备 - Google Patents
一种连续制备二维纳米薄膜的化学气相沉积设备 Download PDFInfo
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- CN102634776B CN102634776B CN201210134598.4A CN201210134598A CN102634776B CN 102634776 B CN102634776 B CN 102634776B CN 201210134598 A CN201210134598 A CN 201210134598A CN 102634776 B CN102634776 B CN 102634776B
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- 229910021389 graphene Inorganic materials 0.000 claims abstract description 22
- -1 transition metal sulfide Chemical class 0.000 claims abstract description 9
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 8
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- OWLVPKNBSRZIAL-UHFFFAOYSA-N [SiH2]=[Ge] Chemical compound [SiH2]=[Ge] OWLVPKNBSRZIAL-UHFFFAOYSA-N 0.000 abstract 2
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CN201210134598.4A CN102634776B (zh) | 2012-05-03 | 2012-05-03 | 一种连续制备二维纳米薄膜的化学气相沉积设备 |
PCT/CN2013/073573 WO2013149572A1 (zh) | 2012-04-02 | 2013-04-01 | 规模化连续制备二维纳米薄膜的装备 |
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CN201210134598.4A CN102634776B (zh) | 2012-05-03 | 2012-05-03 | 一种连续制备二维纳米薄膜的化学气相沉积设备 |
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CN102634776A CN102634776A (zh) | 2012-08-15 |
CN102634776B true CN102634776B (zh) | 2014-03-12 |
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WO2013149572A1 (zh) * | 2012-04-02 | 2013-10-10 | Xu Mingsheng | 规模化连续制备二维纳米薄膜的装备 |
CN103668453B (zh) * | 2012-09-21 | 2016-12-21 | 浙江大学 | 一种二维硅烯薄膜及其制备方法 |
CN104278242A (zh) * | 2013-07-12 | 2015-01-14 | 刘玮 | 一种新型的等离子体镀膜替代水电镀系统 |
CN104911565B (zh) * | 2014-03-11 | 2017-12-22 | 中微半导体设备(上海)有限公司 | 一种化学气相沉积装置 |
CN105088335B (zh) * | 2014-05-09 | 2018-01-05 | 理想能源设备(上海)有限公司 | 一种生长石墨烯薄膜的装置及其生长方法 |
CN106609392A (zh) * | 2015-10-23 | 2017-05-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 二维纳米薄膜制备装置及方法 |
CN110331378B (zh) * | 2019-07-18 | 2024-01-19 | 中国科学院金属研究所 | 金刚石薄膜连续制备使用的hfcvd设备及其镀膜方法 |
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CN202558935U (zh) * | 2012-05-03 | 2012-11-28 | 徐明生 | 一种连续制备二维纳米薄膜的化学气相沉积设备 |
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US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6186090B1 (en) * | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
CN1172022C (zh) * | 2001-10-11 | 2004-10-20 | 矽统科技股份有限公司 | 沉积过程的工作平台 |
JP2003133230A (ja) * | 2001-10-29 | 2003-05-09 | Mitsubishi Heavy Ind Ltd | フレキシブル基板の半導体処理装置 |
JP4197111B2 (ja) * | 2002-08-27 | 2008-12-17 | 株式会社アルバック | 縦型触媒化学気相成長装置及び該装置を用いた成膜方法 |
JP2004190082A (ja) * | 2002-12-10 | 2004-07-08 | Kobe Steel Ltd | Pvd・cvd両用成膜装置及び当該装置を用いた成膜方法 |
KR100857227B1 (ko) * | 2007-03-13 | 2008-09-05 | (주)인솔라텍 | 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법 |
GB0713821D0 (en) * | 2007-07-17 | 2007-08-29 | P2I Ltd | A plasma deposition apparatus |
US8173477B2 (en) * | 2010-02-03 | 2012-05-08 | Xunlight Corporation | Isolation chamber and method of using the isolation chamber to make solar cell material |
CN201834965U (zh) * | 2010-11-05 | 2011-05-18 | 理想能源设备(上海)有限公司 | 一种用于生产薄膜太阳能电池的化学气相沉积系统 |
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Address after: 225802 Jiangsu city of Yangzhou province Baoying County Jing Town Industrial Zone No. 14 crossing Patentee after: Jiangsu GEIL graphene Technology Co., Ltd. Address before: 211616 Huaian City, Jiangsu province Jinhu County, Dai Lou Zhen Industrial Zone East Road No. 8 Patentee before: Jiangsu GEIL graphene Technology Co., Ltd. |
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