ATE521728T1 - Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten - Google Patents
Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthaltenInfo
- Publication number
- ATE521728T1 ATE521728T1 AT09178772T AT09178772T ATE521728T1 AT E521728 T1 ATE521728 T1 AT E521728T1 AT 09178772 T AT09178772 T AT 09178772T AT 09178772 T AT09178772 T AT 09178772T AT E521728 T1 ATE521728 T1 AT E521728T1
- Authority
- AT
- Austria
- Prior art keywords
- group
- metal
- carbon atoms
- containing precursors
- deposing
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 8
- 229910052751 metal Inorganic materials 0.000 title abstract 8
- 150000002739 metals Chemical class 0.000 title 1
- 239000007858 starting material Substances 0.000 title 1
- 125000000217 alkyl group Chemical group 0.000 abstract 5
- 239000002243 precursor Substances 0.000 abstract 5
- 125000004432 carbon atom Chemical group C* 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 125000002947 alkylene group Chemical group 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12133608P | 2008-12-10 | 2008-12-10 | |
US12/629,416 US8471049B2 (en) | 2008-12-10 | 2009-12-02 | Precursors for depositing group 4 metal-containing films |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE521728T1 true ATE521728T1 (de) | 2011-09-15 |
Family
ID=41664861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09178772T ATE521728T1 (de) | 2008-12-10 | 2009-12-10 | Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten |
Country Status (6)
Country | Link |
---|---|
US (1) | US8471049B2 (de) |
EP (1) | EP2196557B1 (de) |
JP (2) | JP5330213B2 (de) |
KR (1) | KR101124722B1 (de) |
AT (1) | ATE521728T1 (de) |
TW (1) | TWI418647B (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5248025B2 (ja) * | 2007-03-01 | 2013-07-31 | 東京エレクトロン株式会社 | SrTiO3膜の成膜方法およびコンピュータ読取可能な記憶媒体 |
US8507704B2 (en) * | 2009-09-08 | 2013-08-13 | Air Products And Chemicals, Inc. | Liquid composition containing aminoether for deposition of metal-containing films |
US8952188B2 (en) | 2009-10-23 | 2015-02-10 | Air Products And Chemicals, Inc. | Group 4 metal precursors for metal-containing films |
US9344716B2 (en) | 2010-09-28 | 2016-05-17 | Samsung Electronics Co., Ltd. | Adaptive filtering method and apparatus |
US20130011579A1 (en) | 2010-11-30 | 2013-01-10 | Air Products And Chemicals, Inc. | Metal-Enolate Precursors For Depositing Metal-Containing Films |
KR20120064966A (ko) | 2010-12-10 | 2012-06-20 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
WO2015093389A1 (ja) * | 2013-12-18 | 2015-06-25 | 文彦 廣瀬 | 酸化物薄膜の形成方法および装置 |
EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
WO2018199642A1 (ko) | 2017-04-27 | 2018-11-01 | (주)디엔에프 | 금속 트리아민 화합물, 이의 제조방법 및 이를 포함하는 금속 함유 박막증착용 조성물 |
KR102033540B1 (ko) | 2017-04-27 | 2019-10-17 | (주)디엔에프 | 금속 트리아민 화합물, 이의 제조방법 및 이를 포함하는 금속 함유 박막증착용 조성물 |
US10319588B2 (en) * | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
PL239495B1 (pl) * | 2018-03-26 | 2021-12-06 | Politechnika Lodzka | Sposób wytwarzania powłoki węglowej domieszkowanej tytanem i tlenem |
KR20240060875A (ko) * | 2018-09-03 | 2024-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 증착을 위한 직접 액체 주입 시스템 |
KR102283752B1 (ko) | 2018-12-20 | 2021-07-30 | 한국화학연구원 | 신규한 4족 전이금속 화합물 및 이의 제조방법 |
KR102618630B1 (ko) | 2019-10-10 | 2023-12-26 | 삼성에스디아이 주식회사 | 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자 |
KR102438983B1 (ko) | 2020-09-22 | 2022-09-01 | (주)이지켐 | 열 안정성이 우수한 신규 4족 유기금속 전구체 화합물, 그 제조방법 및 이를 이용한 박막 형성 방법 |
JP6980324B1 (ja) * | 2021-03-08 | 2021-12-15 | 株式会社クリエイティブコーティングス | チタン酸バリウム膜の製造方法 |
KR20230014555A (ko) | 2021-07-21 | 2023-01-30 | 한국화학연구원 | 신규한 4족 전이금속 화합물, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
KR20230014552A (ko) | 2021-07-21 | 2023-01-30 | 한국화학연구원 | 신규한 4족 전이금속 화합물, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
Family Cites Families (28)
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WO1984003042A1 (en) | 1983-02-09 | 1984-08-16 | Byk Gulden Lomberg Chem Fab | Process for producing therapeutical antineoplastic preparations |
JP2822946B2 (ja) | 1995-07-31 | 1998-11-11 | 三菱マテリアル株式会社 | 高純度Ti錯体及びその製造方法並びにBST膜形成用液体組成物 |
KR100418164B1 (ko) | 1995-07-31 | 2004-03-19 | 미쓰비시 마테리알 가부시키가이샤 | 고순도 티탄착체 및 그의 제조방법과 티탄산 바륨 스트론튬막 형성용 액체조성물 |
JP3883235B2 (ja) | 1996-10-08 | 2007-02-21 | 株式会社Adeka | 金属錯体化合物からなるcvd材料 |
GB9709639D0 (en) | 1997-05-14 | 1997-07-02 | Inorgtech Ltd | Chemical vapour deposition precursors |
JPH1192937A (ja) | 1997-09-17 | 1999-04-06 | Masaru Okada | Plzt系薄膜の合成方法 |
US6355097B2 (en) | 1998-02-09 | 2002-03-12 | Mitsubishi Materials Corporation | Organic titanium compound suitable for MOCVD |
JP2000100802A (ja) | 1998-09-17 | 2000-04-07 | Hitachi Ltd | 半導体装置の製造方法 |
US7094284B2 (en) | 1999-10-07 | 2006-08-22 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same |
US6623656B2 (en) * | 1999-10-07 | 2003-09-23 | Advanced Technology Materials, Inc. | Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same |
KR20010084675A (ko) | 2000-02-28 | 2001-09-06 | 윤종용 | 확산방지막을 가진 반도체 장치의 커패시터 형성방법 |
JP2002275121A (ja) * | 2000-04-21 | 2002-09-25 | Mitsubishi Materials Corp | 有機ジルコニウム化合物及び該化合物を含む有機溶液並びにそれを用いて作製されたジルコニウム含有薄膜 |
EP2293322A1 (de) | 2000-06-08 | 2011-03-09 | Genitech, Inc. | Verfahren zur Abscheidung einer Metallnitridschicht |
JP2004507551A (ja) | 2000-08-28 | 2004-03-11 | アドバンスト テクノロジー マテリアルズ,インコーポレイテッド | ソース材料組成物および化学的蒸着法による基板上への金属膜形成方法 |
KR20030000423A (ko) * | 2001-06-25 | 2003-01-06 | 삼성전자 주식회사 | Iv족 금속 전구체를 이용한 원자층 증착방법 |
JP3971598B2 (ja) | 2001-11-01 | 2007-09-05 | 富士通株式会社 | 強誘電体キャパシタおよび半導体装置 |
JP2003155566A (ja) | 2001-11-15 | 2003-05-30 | Asahi Denka Kogyo Kk | 薄膜の製造方法及び化学気相成長用原料 |
JP4211300B2 (ja) * | 2002-06-27 | 2009-01-21 | 三菱マテリアル株式会社 | 有機チタン化合物及びこれを含む溶液原料並びにこれから作られるチタン含有誘電体薄膜 |
US6562990B1 (en) | 2002-07-03 | 2003-05-13 | E. I. Du Pont De Nemours And Company | Titanium chelates and processes therefor |
JP4120321B2 (ja) | 2002-07-29 | 2008-07-16 | 株式会社高純度化学研究所 | 化学気相成長用のチタン錯体とそれを用いたpzt薄膜の製造方法 |
JP2004296522A (ja) | 2003-03-25 | 2004-10-21 | Fujitsu Ltd | 薄膜形成方法 |
US7416994B2 (en) | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
JP2007081410A (ja) | 2005-09-15 | 2007-03-29 | Samsung Electronics Co Ltd | 強誘電体膜及び強誘電体キャパシタ形成方法及び強誘電体キャパシタ |
KR100660550B1 (ko) | 2005-09-15 | 2006-12-22 | 삼성전자주식회사 | 강유전체막 및 강유전체 커패시터 형성 방법 |
US7947814B2 (en) | 2006-04-25 | 2011-05-24 | Air Products And Chemicals, Inc. | Metal complexes of polydentate beta-ketoiminates |
US20080254218A1 (en) | 2007-04-16 | 2008-10-16 | Air Products And Chemicals, Inc. | Metal Precursor Solutions For Chemical Vapor Deposition |
US7691984B2 (en) | 2007-11-27 | 2010-04-06 | Air Products And Chemicals, Inc. | Metal complexes of tridentate β-ketoiminates |
US20100119726A1 (en) | 2008-11-07 | 2010-05-13 | Air Products And Chemicals, Inc. | Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films |
-
2009
- 2009-12-02 US US12/629,416 patent/US8471049B2/en active Active
- 2009-12-09 TW TW098141993A patent/TWI418647B/zh not_active IP Right Cessation
- 2009-12-10 KR KR1020090122674A patent/KR101124722B1/ko active IP Right Grant
- 2009-12-10 JP JP2009280376A patent/JP5330213B2/ja not_active Expired - Fee Related
- 2009-12-10 AT AT09178772T patent/ATE521728T1/de not_active IP Right Cessation
- 2009-12-10 EP EP09178772A patent/EP2196557B1/de not_active Not-in-force
-
2013
- 2013-05-29 JP JP2013112557A patent/JP5711300B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW201026878A (en) | 2010-07-16 |
EP2196557B1 (de) | 2011-08-24 |
JP2010177661A (ja) | 2010-08-12 |
KR20100067069A (ko) | 2010-06-18 |
JP2013219376A (ja) | 2013-10-24 |
US20100143607A1 (en) | 2010-06-10 |
EP2196557A1 (de) | 2010-06-16 |
US8471049B2 (en) | 2013-06-25 |
JP5711300B2 (ja) | 2015-04-30 |
KR101124722B1 (ko) | 2012-04-23 |
TWI418647B (zh) | 2013-12-11 |
JP5330213B2 (ja) | 2013-10-30 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |