ATE521728T1 - Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten - Google Patents

Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten

Info

Publication number
ATE521728T1
ATE521728T1 AT09178772T AT09178772T ATE521728T1 AT E521728 T1 ATE521728 T1 AT E521728T1 AT 09178772 T AT09178772 T AT 09178772T AT 09178772 T AT09178772 T AT 09178772T AT E521728 T1 ATE521728 T1 AT E521728T1
Authority
AT
Austria
Prior art keywords
group
metal
carbon atoms
containing precursors
deposing
Prior art date
Application number
AT09178772T
Other languages
English (en)
Inventor
Xinjian Lei
Daniel P Spence
Moo-Sung Kim
Iain Buchanan
Laura M Matz
Sergei Vladimirovich Ivanov
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE521728T1 publication Critical patent/ATE521728T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
AT09178772T 2008-12-10 2009-12-10 Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten ATE521728T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12133608P 2008-12-10 2008-12-10
US12/629,416 US8471049B2 (en) 2008-12-10 2009-12-02 Precursors for depositing group 4 metal-containing films

Publications (1)

Publication Number Publication Date
ATE521728T1 true ATE521728T1 (de) 2011-09-15

Family

ID=41664861

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09178772T ATE521728T1 (de) 2008-12-10 2009-12-10 Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten

Country Status (6)

Country Link
US (1) US8471049B2 (de)
EP (1) EP2196557B1 (de)
JP (2) JP5330213B2 (de)
KR (1) KR101124722B1 (de)
AT (1) ATE521728T1 (de)
TW (1) TWI418647B (de)

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US8507704B2 (en) * 2009-09-08 2013-08-13 Air Products And Chemicals, Inc. Liquid composition containing aminoether for deposition of metal-containing films
US8952188B2 (en) 2009-10-23 2015-02-10 Air Products And Chemicals, Inc. Group 4 metal precursors for metal-containing films
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US20130011579A1 (en) * 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
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US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
WO2015093389A1 (ja) * 2013-12-18 2015-06-25 文彦 廣瀬 酸化物薄膜の形成方法および装置
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
JP2020513476A (ja) * 2016-11-23 2020-05-14 インテグリス・インコーポレーテッド コバルトの化学蒸着用のハロアルキニルジコバルトヘキサカルボニル前駆体
WO2018199642A1 (ko) 2017-04-27 2018-11-01 (주)디엔에프 금속 트리아민 화합물, 이의 제조방법 및 이를 포함하는 금속 함유 박막증착용 조성물
KR102033540B1 (ko) 2017-04-27 2019-10-17 (주)디엔에프 금속 트리아민 화합물, 이의 제조방법 및 이를 포함하는 금속 함유 박막증착용 조성물
US10319588B2 (en) * 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
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KR20210041104A (ko) * 2018-09-03 2021-04-14 어플라이드 머티어리얼스, 인코포레이티드 박막 증착을 위한 직접 액체 주입 시스템
KR102283752B1 (ko) 2018-12-20 2021-07-30 한국화학연구원 신규한 4족 전이금속 화합물 및 이의 제조방법
KR102618630B1 (ko) 2019-10-10 2023-12-26 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102438983B1 (ko) 2020-09-22 2022-09-01 (주)이지켐 열 안정성이 우수한 신규 4족 유기금속 전구체 화합물, 그 제조방법 및 이를 이용한 박막 형성 방법
JP2024507177A (ja) * 2021-02-15 2024-02-16 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 金属含有薄膜を堆積するための第６族アミジネートパドルホイール型化合物
JP6980324B1 (ja) * 2021-03-08 2021-12-15 株式会社クリエイティブコーティングス チタン酸バリウム膜の製造方法
KR20230014552A (ko) 2021-07-21 2023-01-30 한국화학연구원 신규한 4족 전이금속 화합물, 이의 제조방법 및 이를 이용하여　박막을 형성하는 방법
KR20230014555A (ko) 2021-07-21 2023-01-30 한국화학연구원 신규한 4족 전이금속 화합물, 이의 제조방법 및 이를 이용하여　박막을 형성하는 방법

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Also Published As

Publication number Publication date
US20100143607A1 (en) 2010-06-10
JP2013219376A (ja) 2013-10-24
TWI418647B (zh) 2013-12-11
JP2010177661A (ja) 2010-08-12
KR20100067069A (ko) 2010-06-18
KR101124722B1 (ko) 2012-04-23
EP2196557A1 (de) 2010-06-16
JP5330213B2 (ja) 2013-10-30
TW201026878A (en) 2010-07-16
JP5711300B2 (ja) 2015-04-30
EP2196557B1 (de) 2011-08-24
US8471049B2 (en) 2013-06-25

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