JP2000514117A - 工業用途用シクロオレフィン(共)重合体の製造方法 - Google Patents
工業用途用シクロオレフィン(共)重合体の製造方法Info
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- JP2000514117A JP2000514117A JP10504739A JP50473998A JP2000514117A JP 2000514117 A JP2000514117 A JP 2000514117A JP 10504739 A JP10504739 A JP 10504739A JP 50473998 A JP50473998 A JP 50473998A JP 2000514117 A JP2000514117 A JP 2000514117A
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- C07F17/00—Metallocenes
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- C07F9/02—Phosphorus compounds
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- C08F4/60—Metals; Metal hydrides; Metallo-organic compounds; Use thereof as catalyst precursors selected from light metals, zinc, cadmium, mercury, copper, silver, gold, boron, gallium, indium, thallium, rare earths or actinides together with refractory metals, iron group metals, platinum group metals, manganese, rhenium technetium or compounds thereof
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- C08F4/60—Metals; Metal hydrides; Metallo-organic compounds; Use thereof as catalyst precursors selected from light metals, zinc, cadmium, mercury, copper, silver, gold, boron, gallium, indium, thallium, rare earths or actinides together with refractory metals, iron group metals, platinum group metals, manganese, rhenium technetium or compounds thereof
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- Y10S526/00—Synthetic resins or natural rubbers -- part of the class 520 series
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 共触媒による活性化を受け得る有機金属触媒の存在下で環状オレフィン 類、C原子数が2以上のα−オレフィン類および任意に共役もしくは非共役ジオ レフィン類から成る群のモノマー類を、0.5から70バール下、−78から+ 200℃の気相中、塊状、溶液相中またはスラリー相中で(共)重合させること で、光学データメモリー用使用を除く産業用途用のシクロオレフィン(共)重合 体を製造する方法であって、該有機金属触媒として式 [式中、 CpIおよびCpIIは、ハロゲンで一置換から完全に置換されていてもよいか 或はフェニルで一置換から三置換されていてもよいか或はビニルで一置換から三 置換されていてもよい線状もしくは分枝C1−C20−アルキル、C6−C12−アリ ール、C原子数が6から12のハロゲノアリール、有機金属置換基、例えばシリ ル、トリメチルシリルまたはフェロセニルから成る群の同一もしくは異なる基で H原子の1つから全部が置換されていてもよくそして1つまたは2つがDおよび Aで置換されていてもよいシクロペンタジエニル含有構造を有する2つの同一も しくは異なるカルボアニオンであり、 Dは、追加的に置換基を持っていてもよくて個々の結合状態で自由電子 対を少なくとも1対持つ供与体原子を表し、 Aは、追加的に置換基を持っていてもよくて個々の結合状態で電子対空間を持つ 受容体原子を表し、 ここで、DおよびAは、該供与体基が正(部分)電荷を取りそして該受容体基が 負(部分)電荷を取るように可逆的配位結合で連結しており、 Mは、ランタニド類およびアクチニド類を包含する元素周期律表(メンデレエフ )のIII、IV、VまたはVI亜族の遷移金属を表し、 Xは、1アニオン相当物を表し、そして nは、Mの電荷に応じて0、1、2、3または4の数を表す] で表されるメタロセン化合物もしくはπ錯体化合物、または式 [式中、 πIおよびπIIは、1または2個の不飽和もしくは飽和5員もしくは6員環と 縮合していてもよくて異なって帯電しているか或は電気的に中性の異なるπ系を 表し、 Dは、πIの置換基であるか或はπIのπ系の一部であって個々の結合状態で自 由電子対を少なくとも1対持つ供与体原子を表し、 Aは、πIIの置換基であるか或はπIIのπ系の一部であって個々の結合状態 で電子対空間を持つ受容体原子を表し、 ここで、DおよびAは、該供与体基が正(部分)電荷を取りそして該受 容体基が負(部分)電荷を取るように可逆的配位結合で連結しており、そしてこ こで、DおよびAの少なくとも1つは個々の関連π系の一部であり、 ここで、DおよびAは、逆に、置換基を持っていてもよく、 各π系および各縮合環系は1つ以上のDもしくはAまたはDとAを含んでいても よく、そしてここで、 非縮合もしくは縮合形態のπIおよびπIIにおけるπ系のH原子は、互いに独 立して、1つから全部が、ハロゲンで一置換から完全に置換されていてもよいか 或はフェニルで一置換から三置換されていてもよいか或はビニルで一置換から三 置換されていてもよい線状もしくは分枝C1−C20−アルキル、C6−C12−アリ ール、C原子数が6から12のハロゲノアリール、有機金属置換基、例えばシリ ル、トリメチルシリルまたはフェロセニルから成る群の同一もしくは異なる基で 置換されていてもよいか、或は1つまたは2つが、(i)DおよびAの両方とも が個々のπ系もしくは縮合環系の一部であるか或は(ii)DまたはAがπ系の 一部でありそして各場合とももう一方が非縮合π系もしくは縮合環系の置換基で あるか或は(iii)DおよびAの両方がそのような置換基でありそして(ii i)の場合には少なくとも1つの追加的DもしくはAまたは両方がπ系もしくは 縮合環系の一部であるところのDとAの間に可逆的配位D→A結合が形成される ように、DおよびAで置換されていてもよく、 MおよびXは、この上に示した意味を有し、そして nは、Mの電荷およびπ−Iおよびπ−IIの電荷に応じて0、1、2、3また は4の数を表す] で表されるπ錯体化合物、特にメタロセン化合物、 を用いることを含む方法。 2. 該メタロセン化合物またはπ錯体化合物を触媒としてモノマーの量がメ タロセンもしくはπ錯体化合物1モル当たり101から1012モルになるような 量で用いる請求の範囲第1項記載の方法。 3. 該反応を無溶媒または飽和もしくは芳香族炭化水素または飽和もしくは 芳香族ハロゲノ炭化水素から成る群の溶媒の存在下で実施する請求の範囲第1お よび2項記載の方法。 4. 該メタロセン化合物におけるカルボアニオンCpIおよびCpIIまた はπ系πIがシクロペンタジエン、置換シクロペンタジエン、インデン、置換イ ンデン、フルオレンおよび置換フルオレンから成る群のシクロペンタジエニル骨 格を表し、ここで、請求の範囲第1項で述べた意味の範囲を有するDおよびA、 C1−C20−アルキル、C1−C20−アルコキシ、ハロゲン、C6−C12−アリー ルおよびハロゲノフェニルから成る群の置換基がシクロペンタジエンまたは縮合 ベンゼン環1個当たり1から4個存在しており、そしてここで、縮合芳香族環が 部分的または完全に水添されていてもよい請求の範囲第1から3項記載の方法。 5. 該メタロセン化合物にN,P,As,Sb,Bi,O,S,Se,Te ,F,Cl、BrおよびI、好適にはN、P、OおよびSから成る群の元素が供 与体原子Dとして存在している請求の範囲第1から4項記載の方法。 6. 該メタロセン化合物にB、Al、Ga、InおよびTl、好適にはB、 AlおよびGaから成る群の元素が受容体原子Aとして存在している請求の範囲 第1から5項記載の方法。 7. 該メタロセン化合物またはπ錯体化合物にN→B,N→Al,P→B, P→Al,O→B,O→Al,Cl→B,Cl→Al,C=O→B,C=O→A lから成る群の供与体−受容体ブリッジが存在している請求の範囲第1から6項 記載の方法。 8. 該メタロセン化合物におけるMがSc,Y,La,Sm,Nd,Lu, Ti,Zr,Hf,Th,V,Nb,TaまたはCr、好適にはTi,Zr,Hf ,V,NbまたはTaを表す請求の範囲第1から7項記載の方法。 9. 該メタロセン化合物またはπ錯体化合物をアルミノキサン、ボランまた はボレートおよび適宜さらなる共触媒および/または金属アルキル類と一緒の触 媒系として用いる請求の範囲第1から8項記載の方法。 10. 請求の範囲第1から9項記載の方法であって、自己活性化に伴ってD /A結合が開いた後に受容体の原子AがX配位子と結合して両性イオンメタロセ ン錯体構造またはπ錯体構造を形成することで遷移金属Mに正電荷が発生しかつ 受容体の原子Aに負電荷が発生しそしてさらなるX配位子がHまたは置換もしく は未置換Cを表してそれと遷移金属Mの結合の中にオレフィンが入り込むことで それの重合が起こり、好適には2つのX配位子が連結して1つのキレート配位子 になっているところの請求の範囲第1項記載のメタロセン化合物またはπ錯体化 合物が自己活性化を起こすことで生じる転位生成物を用いる方法。 11. 原子DまたはAの1つが関連π系の環の一部、好適にはDが関連π系 の環の一部である請求の範囲第1項記載π錯体化合物を用いる請求の範囲第1か ら10項記載の方法。 12. 式(I)または(XII)に従うメタロセン化合物または π錯体とイオン化剤の反応で生じた式(XIa)から(XId)で表される反応 生成物 [式中、 Anionは、かさ高くてあまり配位しない完全アニオンを表し、そしてBas eは、ルイス塩基を表す] を用いる請求の範囲第1から11項記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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DE19627064A DE19627064C2 (de) | 1996-07-05 | 1996-07-05 | Metallocen-Verbindungen, Verfahren zu deren Herstellung, sowie ihre Verwendung |
DE19627064.2 | 1997-04-05 | ||
DE19714058.0 | 1997-04-05 | ||
DE19714058A DE19714058A1 (de) | 1997-04-05 | 1997-04-05 | pi-Komplex-Verbindungen |
PCT/EP1997/003460 WO1998001484A1 (de) | 1996-07-05 | 1997-07-02 | Verfahren zur herstellung von cycloolefin-(co)polymeren für technische anwendungen |
Publications (1)
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JP2000514117A true JP2000514117A (ja) | 2000-10-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP10504741A Ceased JP2000514119A (ja) | 1996-07-05 | 1997-07-02 | 熱可塑性エラストマーの製造方法 |
JP10504740A Ceased JP2000514118A (ja) | 1996-07-05 | 1997-07-02 | 高融点ポリオレフィン類の製造方法 |
JP10504739A Ceased JP2000514117A (ja) | 1996-07-05 | 1997-07-02 | 工業用途用シクロオレフィン(共)重合体の製造方法 |
JP10504738A Pending JP2000514116A (ja) | 1996-07-05 | 1997-07-02 | 光データメモリに使用するためのシクロオレフィン(コ)ポリマーの製造法 |
JP10504743A Ceased JP2000514120A (ja) | 1996-07-05 | 1997-07-02 | エラストマーの製造方法 |
Family Applications Before (2)
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JP10504741A Ceased JP2000514119A (ja) | 1996-07-05 | 1997-07-02 | 熱可塑性エラストマーの製造方法 |
JP10504740A Ceased JP2000514118A (ja) | 1996-07-05 | 1997-07-02 | 高融点ポリオレフィン類の製造方法 |
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JP10504738A Pending JP2000514116A (ja) | 1996-07-05 | 1997-07-02 | 光データメモリに使用するためのシクロオレフィン(コ)ポリマーの製造法 |
JP10504743A Ceased JP2000514120A (ja) | 1996-07-05 | 1997-07-02 | エラストマーの製造方法 |
Country Status (13)
Country | Link |
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US (5) | US6174974B1 (ja) |
EP (5) | EP0909285B1 (ja) |
JP (5) | JP2000514119A (ja) |
KR (1) | KR20000022453A (ja) |
CN (5) | CN1229417A (ja) |
AT (5) | ATE192755T1 (ja) |
AU (5) | AU3345697A (ja) |
CA (5) | CA2259438C (ja) |
DE (5) | DE59701657D1 (ja) |
ES (5) | ES2146106T3 (ja) |
NO (5) | NO985860L (ja) |
RU (3) | RU2205189C2 (ja) |
WO (5) | WO1998001484A1 (ja) |
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1996
- 1996-07-02 US US09/214,189 patent/US6174974B1/en not_active Expired - Fee Related
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1997
- 1997-02-07 US US09/214,399 patent/US6191241B1/en not_active Expired - Fee Related
- 1997-07-02 EP EP97933647A patent/EP0909285B1/de not_active Expired - Lifetime
- 1997-07-02 DE DE59701657T patent/DE59701657D1/de not_active Expired - Fee Related
- 1997-07-02 CA CA002259438A patent/CA2259438C/en not_active Expired - Fee Related
- 1997-07-02 CN CN97197678A patent/CN1229417A/zh active Pending
- 1997-07-02 EP EP97930480A patent/EP0909282B1/de not_active Expired - Lifetime
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008031319A (ja) * | 2006-07-28 | 2008-02-14 | Fujifilm Corp | ノルボルネン系重合体、フィルム、偏光板および液晶表示装置 |
JP2009249409A (ja) * | 2008-04-02 | 2009-10-29 | Mitsubishi Rayon Co Ltd | 重合体及びその製造方法 |
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