ITMI930784A1 - Metodo ed insieme di circuiti per cancellare una memoria a semiconduttori non volatile comprendente ridondanza di righe - Google Patents

Metodo ed insieme di circuiti per cancellare una memoria a semiconduttori non volatile comprendente ridondanza di righe

Info

Publication number
ITMI930784A1
ITMI930784A1 IT000784A ITMI930784A ITMI930784A1 IT MI930784 A1 ITMI930784 A1 IT MI930784A1 IT 000784 A IT000784 A IT 000784A IT MI930784 A ITMI930784 A IT MI930784A IT MI930784 A1 ITMI930784 A1 IT MI930784A1
Authority
IT
Italy
Prior art keywords
deleting
circuits
lines
semiconductor memory
memory including
Prior art date
Application number
IT000784A
Other languages
English (en)
Inventor
Mickey Lee Fandrich
Amit Merchant
Neal R Mielke
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of ITMI930784A0 publication Critical patent/ITMI930784A0/it
Publication of ITMI930784A1 publication Critical patent/ITMI930784A1/it
Application granted granted Critical
Publication of IT1272355B publication Critical patent/IT1272355B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
ITMI930784A 1992-04-21 1993-04-21 Metodo ed insieme di circuiti per cancellare una memoria a semiconduttori non volatile comprendente ridondanza di righe IT1272355B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/871,485 US5327383A (en) 1992-04-21 1992-04-21 Method and circuitry for erasing a nonvolatile semiconductor memory incorporating row redundancy

Publications (3)

Publication Number Publication Date
ITMI930784A0 ITMI930784A0 (it) 1993-04-21
ITMI930784A1 true ITMI930784A1 (it) 1994-10-21
IT1272355B IT1272355B (it) 1997-06-23

Family

ID=25357554

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI930784A IT1272355B (it) 1992-04-21 1993-04-21 Metodo ed insieme di circuiti per cancellare una memoria a semiconduttori non volatile comprendente ridondanza di righe

Country Status (3)

Country Link
US (1) US5327383A (it)
JP (1) JPH06318398A (it)
IT (1) IT1272355B (it)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
JP2856621B2 (ja) * 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5513136A (en) * 1993-09-27 1996-04-30 Intel Corporation Nonvolatile memory with blocks and circuitry for selectively protecting the blocks for memory operations
GB2283342B (en) * 1993-10-26 1998-08-12 Intel Corp Programmable code store circuitry for a nonvolatile semiconductor memory device
US5438546A (en) * 1994-06-02 1995-08-01 Intel Corporation Programmable redundancy scheme suitable for single-bit state and multibit state nonvolatile memories
US5537357A (en) * 1994-06-27 1996-07-16 Intel Corporation Method for preconditioning a nonvolatile memory array
US5490109A (en) * 1994-06-28 1996-02-06 Intel Corporation Method and apparatus for preventing over-erasure of flash EEPROM memory devices
US5517138A (en) * 1994-09-30 1996-05-14 Intel Corporation Dual row selection using multiplexed tri-level decoder
US5491660A (en) * 1994-11-18 1996-02-13 Texas Instruments Incorporated On-chip operation control for memories
MY121210A (en) * 1995-02-24 2006-01-28 Intel Corp Nonvolatile memory with output mode configuration
JP3145894B2 (ja) * 1995-03-10 2001-03-12 日本電気株式会社 電気的に書込み・消去可能な不揮発性半導体記憶装置
US5890193A (en) * 1995-07-28 1999-03-30 Micron Technology, Inc. Architecture for state machine for controlling internal operations of flash memory
US6041389A (en) * 1995-11-16 2000-03-21 E Cirrus Logic, Inc. Memory architecture using content addressable memory, and systems and methods using the same
JP3976839B2 (ja) * 1996-07-09 2007-09-19 株式会社ルネサステクノロジ 不揮発性メモリシステムおよび不揮発性半導体メモリ
US6009016A (en) * 1996-07-09 1999-12-28 Hitachi, Ltd. Nonvolatile memory system semiconductor memory and writing method
GB9614551D0 (en) * 1996-07-11 1996-09-04 Memory Corp Plc Memory system
US5835413A (en) * 1996-12-20 1998-11-10 Intel Corporation Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels
US5787039A (en) * 1997-03-06 1998-07-28 Macronix International Co., Ltd. Low current floating gate programming with bit-by-bit verification
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
JP3228225B2 (ja) * 1998-06-01 2001-11-12 日本電気株式会社 記憶装置の消去装置、記憶装置の消去方法及びそのプログラムを記憶した記憶媒体
US6711056B2 (en) * 2001-03-12 2004-03-23 Micron Technology, Inc. Memory with row redundancy
US6381174B1 (en) 2001-03-12 2002-04-30 Micron Technology, Inc. Non-volatile memory device with redundant columns
US6469932B2 (en) * 2001-03-12 2002-10-22 Micron Technology, Inc. Memory with row redundancy
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US7120068B2 (en) * 2002-07-29 2006-10-10 Micron Technology, Inc. Column/row redundancy architecture using latches programmed from a look up table
US6888731B2 (en) * 2002-11-29 2005-05-03 Mosaid Technologies Incorporated Method and apparatus for replacing defective rows in a semiconductor memory array
US6771541B1 (en) 2003-02-25 2004-08-03 Nexflash Technologies, Inc. Method and apparatus for providing row redundancy in nonvolatile semiconductor memory
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7457167B2 (en) * 2006-10-26 2008-11-25 Atmel Corporation Method for preventing over-erasing of unused column redundant memory cells in a flash memory having single-transistor memory cells
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
KR100898039B1 (ko) * 2007-05-21 2009-05-19 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
US8243532B2 (en) * 2010-02-09 2012-08-14 Infineon Technologies Ag NVM overlapping write method
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9146882B2 (en) * 2013-02-04 2015-09-29 International Business Machines Corporation Securing the contents of a memory device
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
FR3044818B1 (fr) * 2015-12-02 2018-03-30 Stmicroelectronics (Rousset) Sas Procede de gestion d'une ligne defectueuse du plan memoire d'une memoire non volatile et dispositif de memoire correspondant

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943948A (en) * 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US5222046A (en) * 1988-02-17 1993-06-22 Intel Corporation Processor controlled command port architecture for flash memory
KR900019027A (ko) * 1988-05-23 1990-12-22 미다 가쓰시게 불휘발성 반도체 기억장치
JP2698834B2 (ja) * 1988-11-22 1998-01-19 株式会社日立製作所 不揮発性記憶装置
US5031142A (en) * 1989-02-10 1991-07-09 Intel Corporation Reset circuit for redundant memory using CAM cells
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
US5113373A (en) * 1990-08-06 1992-05-12 Advanced Micro Devices, Inc. Power control circuit
KR940006611B1 (ko) * 1990-08-20 1994-07-23 삼성전자 주식회사 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 자동 소거 최적화회로 및 방법
US5237535A (en) * 1991-10-09 1993-08-17 Intel Corporation Method of repairing overerased cells in a flash memory

Also Published As

Publication number Publication date
US5327383A (en) 1994-07-05
ITMI930784A0 (it) 1993-04-21
IT1272355B (it) 1997-06-23
JPH06318398A (ja) 1994-11-15

Similar Documents

Publication Publication Date Title
IT1272355B (it) Metodo ed insieme di circuiti per cancellare una memoria a semiconduttori non volatile comprendente ridondanza di righe
ITMI930783A0 (it) Metodo ed insieme di circuiti per il precondizionamento di righe cortocircuitate in una memoria a semiconduttori non volatile comprendente ridondanza di righe
ITMI911264A0 (it) Dispositivo di memoria a semiconduttore non volatile e suo metodo di fabbricazione
KR900702578A (ko) 불휘발성 반도체 메모리 및 그 제조방법
DE69324127T2 (de) Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür
DE69326370T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69327499T2 (de) Halbleiterspeicher
ITMI921000A0 (it) Dispositivo di memoria non volatile a semiconduttori e relativo metodo di programmazione ottimizzato.
KR900008518A (ko) 반도체 기억장치 및 그 결함구제방법
KR960012535A (ko) 불휘발성 반도체 기억장치 및 그 제조방법
DE69615483T2 (de) Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung
IT1201834B (it) Dispositivo di memoria non volatile a semiconduttore
DE69429140T2 (de) Nichtflüchtige Halbleiterspeicheranordnung und Datenprogrammierverfahren
DE69230750D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69317937T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
ITMI931042A0 (it) Dispositivo di memoria a semiconduttore in grado di riparare bit difettosi
GB9300855D0 (en) Data output circuits for semiconductor memory devices
EP0595250A3 (en) Method of fabricating non-volatile semiconductor memory device
DE69427330T2 (de) Flash-Schreibeverfahren mit niedrigem Strom und Halbleiterspeicherschaltung nach einem solchen Verfahren
DE69223714D1 (de) Halbleiter-Speichereinrichtung und Verfahren zur Output-Kontrolle
DK14190A (da) Accelerationssikker emballage til integrerede kredsloeb og fremgangsmaade til dens fremstilling
ITMI920120A0 (it) Disposizione di una schiera di celle ridondanti per un dispositivo di memoria a semiconduttore
ITMI923001A0 (it) Dispositivo di memoria a semiconduttore e suo metodo di funzionamento
EP0518000A3 (en) Non-volatile semiconductor memory device and method for manufacturing the same
DE69321993T2 (de) Bitleitungsabtastung in Halbleiterspeicheranordnungen

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970328