DE69324127T2 - Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür - Google Patents

Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür

Info

Publication number
DE69324127T2
DE69324127T2 DE69324127T DE69324127T DE69324127T2 DE 69324127 T2 DE69324127 T2 DE 69324127T2 DE 69324127 T DE69324127 T DE 69324127T DE 69324127 T DE69324127 T DE 69324127T DE 69324127 T2 DE69324127 T2 DE 69324127T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
method therefor
data erasure
erasure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324127T
Other languages
English (en)
Other versions
DE69324127D1 (de
Inventor
Hideki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69324127D1 publication Critical patent/DE69324127D1/de
Publication of DE69324127T2 publication Critical patent/DE69324127T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
DE69324127T 1992-10-30 1993-10-29 Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür Expired - Fee Related DE69324127T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4316451A JP2541087B2 (ja) 1992-10-30 1992-10-30 不揮発性半導体記憶装置のデ―タ消去方法

Publications (2)

Publication Number Publication Date
DE69324127D1 DE69324127D1 (de) 1999-04-29
DE69324127T2 true DE69324127T2 (de) 1999-07-29

Family

ID=18077239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324127T Expired - Fee Related DE69324127T2 (de) 1992-10-30 1993-10-29 Halbleiterspeicheranordnung und Datenlöschungsverfahren dafür

Country Status (5)

Country Link
US (1) US5406521A (de)
EP (1) EP0613150B1 (de)
JP (1) JP2541087B2 (de)
KR (1) KR960001322B1 (de)
DE (1) DE69324127T2 (de)

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KR0156590B1 (ko) * 1993-05-11 1998-12-01 미요시 순키치 비소멸성 메모리장치, 비소멸성 메모리셀 및 다수의 트랜지스터의 각각과 비소멸성 메모리셀의 스레솔드값의 조절방법
JPH0778484A (ja) * 1993-07-13 1995-03-20 Nkk Corp 記憶素子、不揮発性メモリ、不揮発性記憶装置及びそれを用いた情報記憶方法
JP3613594B2 (ja) * 1993-08-19 2005-01-26 株式会社ルネサステクノロジ 半導体素子およびこれを用いた半導体記憶装置
US5521867A (en) * 1993-12-01 1996-05-28 Advanced Micro Devices, Inc. Adjustable threshold voltage conversion circuit
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5646886A (en) * 1995-05-24 1997-07-08 National Semiconductor Corporation Flash memory having segmented array for improved operation
JPH08329691A (ja) * 1995-05-30 1996-12-13 Nkk Corp 不揮発性半導体記憶装置
JPH0945090A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
JPH0945094A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
DE69521041T2 (de) * 1995-08-02 2001-11-22 St Microelectronics Srl Flash-EEPROM mit integrierter Anordnung zur Begrenzung der Löschung der Source-Spannung
US5608672A (en) * 1995-09-26 1997-03-04 Advanced Micro Devices, Inc. Correction method leading to a uniform threshold voltage distribution for a flash eprom
JPH0997500A (ja) * 1995-09-29 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
JP3261302B2 (ja) * 1996-03-19 2002-02-25 シャープ株式会社 半導体メモリ装置及びその製造方法
US6330190B1 (en) * 1996-05-30 2001-12-11 Hyundai Electronics America Semiconductor structure for flash memory enabling low operating potentials
JP3549364B2 (ja) * 1996-05-30 2004-08-04 ヒュンダイ エレクトロニクス アメリカ 三重ウェルを有するフラッシュ・メモリ・セルの製造方法
US6043123A (en) * 1996-05-30 2000-03-28 Hyundai Electronics America, Inc. Triple well flash memory fabrication process
JP3191861B2 (ja) * 1997-01-30 2001-07-23 日本電気株式会社 不揮発性半導体メモリ装置及びその消去方法
JP3914340B2 (ja) * 1997-08-30 2007-05-16 株式会社ハイニックスセミコンダクター フラッシュメモリ装置
KR100274344B1 (ko) * 1997-08-30 2000-12-15 김영환 플래쉬메모리셀의소거방법
US5912845A (en) * 1997-09-10 1999-06-15 Macronix International Co., Ltd. Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage
US6359810B1 (en) 1998-03-13 2002-03-19 Atmel Corporation Page mode erase in a flash memory array
US6118705A (en) * 1998-03-13 2000-09-12 Atmel Corporation Page mode erase in a flash memory array
KR100290283B1 (ko) * 1998-10-30 2001-05-15 윤종용 불휘발성 반도체 메모리 장치 및 그의 워드 라인 구동 방법
TW457698B (en) * 1998-12-02 2001-10-01 Winbond Electronics Corp Nonvolatile memory control circuit and control method thereof
KR20000043884A (ko) * 1998-12-29 2000-07-15 김영환 스플리트 게이트형 플래쉬 메모리 셀의 소거 방법
US6072725A (en) * 1999-01-26 2000-06-06 Advanced Micro Devices, Inc. Method of erasing floating gate capacitor used in voltage regulator
US6069824A (en) * 1999-03-03 2000-05-30 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
JP2000276882A (ja) * 1999-03-23 2000-10-06 Nec Corp 不揮発性半導体記憶装置とその記憶データの消去方法
KR100338089B1 (ko) * 1999-12-27 2002-05-24 박종섭 플래시 메모리의 셀 복원 방법
JP3699886B2 (ja) * 2000-07-14 2005-09-28 沖電気工業株式会社 半導体記憶回路
KR100387990B1 (ko) * 2000-10-27 2003-06-18 김철갑 옥수수대 펄프 제조시 부산물로 생성되는 리그닌을포함하는 펄프슬러지를 이용한 활성탄 제조방법
EP1215680B1 (de) * 2000-12-15 2008-03-19 Halo Lsi Design and Device Technology Inc. Schnelles Programmier- und Programmierverifikationsverfahren
AU2002339620A1 (en) * 2001-11-27 2003-06-10 Koninklijke Philips Electronics N.V. Semiconductor device having a byte-erasable eeprom memory
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US6888192B2 (en) * 2003-04-25 2005-05-03 Atmel Corporation Mirror image non-volatile memory cell transistor pairs with single poly layer
US6919242B2 (en) * 2003-04-25 2005-07-19 Atmel Corporation Mirror image memory cell transistor pairs featuring poly floating spacers
US7095653B2 (en) * 2003-10-08 2006-08-22 Micron Technology, Inc. Common wordline flash array architecture
US7319633B2 (en) * 2003-12-19 2008-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100749736B1 (ko) * 2005-06-13 2007-08-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
KR101362955B1 (ko) * 2006-06-30 2014-02-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7986564B2 (en) * 2008-09-19 2011-07-26 Macronix International Co., Ltd. High second bit operation window method for virtual ground array with two-bit memory cells
US8331164B2 (en) * 2010-12-06 2012-12-11 International Business Machines Corporation Compact low-power asynchronous resistor-based memory read operation and circuit
CN107534416B (zh) 2015-04-24 2021-05-25 瑞士优北罗股份有限公司 用于调制信号的电路和方法
JP6450352B2 (ja) * 2016-09-26 2019-01-09 デクセリアルズ株式会社 多孔質炭素材料、及びその製造方法、並びに合成反応用触媒

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2644270B2 (ja) * 1988-04-25 1997-08-25 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
EP0613150A2 (de) 1994-08-31
EP0613150A3 (de) 1995-05-24
US5406521A (en) 1995-04-11
EP0613150B1 (de) 1999-03-24
JPH06151785A (ja) 1994-05-31
KR960001322B1 (ko) 1996-01-25
JP2541087B2 (ja) 1996-10-09
KR940010111A (ko) 1994-05-24
DE69324127D1 (de) 1999-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee