ITMI912229A1 - Dispositivo di memoria a semiconduttore con ridondanza - Google Patents

Dispositivo di memoria a semiconduttore con ridondanza

Info

Publication number
ITMI912229A1
ITMI912229A1 IT002229A ITMI912229A ITMI912229A1 IT MI912229 A1 ITMI912229 A1 IT MI912229A1 IT 002229 A IT002229 A IT 002229A IT MI912229 A ITMI912229 A IT MI912229A IT MI912229 A1 ITMI912229 A1 IT MI912229A1
Authority
IT
Italy
Prior art keywords
row address
memory device
transfer path
path
operation mode
Prior art date
Application number
IT002229A
Other languages
English (en)
Inventor
Hyun Soon Jang
Kyu-Chan Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI912229A0 publication Critical patent/ITMI912229A0/it
Publication of ITMI912229A1 publication Critical patent/ITMI912229A1/it
Application granted granted Critical
Publication of IT1251003B publication Critical patent/IT1251003B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
ITMI912229A 1991-05-24 1991-08-08 Dispositivo di memoria a semiconduttore con ridondanza IT1251003B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008454A KR940002272B1 (ko) 1991-05-24 1991-05-24 리던던시 기능을 가지는 반도체 메모리 장치

Publications (3)

Publication Number Publication Date
ITMI912229A0 ITMI912229A0 (it) 1991-08-08
ITMI912229A1 true ITMI912229A1 (it) 1993-02-08
IT1251003B IT1251003B (it) 1995-04-28

Family

ID=19314872

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI912229A IT1251003B (it) 1991-05-24 1991-08-08 Dispositivo di memoria a semiconduttore con ridondanza

Country Status (7)

Country Link
JP (1) JPH04346000A (it)
KR (1) KR940002272B1 (it)
DE (1) DE4124572A1 (it)
FR (1) FR2676844A1 (it)
GB (1) GB2256070A (it)
IT (1) IT1251003B (it)
TW (1) TW217455B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960013858B1 (ko) * 1994-02-03 1996-10-10 현대전자산업 주식회사 데이타 출력버퍼 제어회로
KR0172844B1 (ko) * 1995-12-11 1999-03-30 문정환 반도체 메모리 소자의 리페어 회로
GB9609834D0 (en) * 1996-05-10 1996-07-17 Memory Corp Plc Semiconductor device
KR100400307B1 (ko) 2001-05-09 2003-10-01 주식회사 하이닉스반도체 로오 리페어회로를 가진 반도체 메모리 장치
KR100414738B1 (ko) * 2001-12-21 2004-01-13 주식회사 하이닉스반도체 퓨즈를 이용한 비트라인 센싱 제어 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS59117792A (ja) * 1982-12-24 1984-07-07 Hitachi Ltd 冗長回路を備えた半導体記憶装置
JPS59203299A (ja) * 1983-05-06 1984-11-17 Nec Corp 冗長ビット付メモリ
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
JPS63244494A (ja) * 1987-03-31 1988-10-11 Toshiba Corp 半導体記憶装置
JP2776835B2 (ja) * 1988-07-08 1998-07-16 株式会社日立製作所 欠陥救済用の冗長回路を有する半導体メモリ

Also Published As

Publication number Publication date
ITMI912229A0 (it) 1991-08-08
GB9116165D0 (en) 1991-09-11
DE4124572A1 (de) 1992-11-26
KR920022148A (ko) 1992-12-19
GB2256070A (en) 1992-11-25
IT1251003B (it) 1995-04-28
KR940002272B1 (ko) 1994-03-19
JPH04346000A (ja) 1992-12-01
TW217455B (it) 1993-12-11
FR2676844A1 (fr) 1992-11-27
DE4124572C2 (it) 1993-07-01

Similar Documents

Publication Publication Date Title
KR880011801A (ko) 반도체 기억장치
KR890008829A (ko) 반도체 기억장치
KR940010097A (ko) 반도체 메모리 장치
KR910010534A (ko) 반도체 기억장치의 용장회로
DE69622126T2 (de) Speichervorrichtung mit verringerter Anzahl von Sicherungen
KR930024011A (ko) 반도체 기억회로
KR950001777A (ko) 반도체 기억 장치
TW430806B (en) Memory device having row decoder
TW363188B (en) Semiconductor memory device
KR970023464A (ko) 테스트 회로가 설치된 반도체 메모리
ITMI912229A1 (it) Dispositivo di memoria a semiconduttore con ridondanza
KR900013621A (ko) 반도체장치
KR930003139A (ko) 반도체 메모리
JPH07201179A (ja) 半導体メモリ・システム
EP0352730A3 (en) Semiconductor memory device provided with an improved system for detecting the positions using a redundant structure
KR970060222A (ko) 동기형 반도체 메모리 장치
KR860009425A (ko) 다이오드 매트릭스형 디코오더와 여분형태를 갖는 반도체 메모리장치
KR960019307A (ko) 반도체 메모리장치
TW328602B (en) Camera system and semiconductor memory circuit for image thereof
KR950019006A (ko) 옵션 처리를 이용한 리페어 효율 증가 회로
JPS56100A (en) Semiconductor memory device
KR960038975A (ko) 확장 데이타 출력모드를 가진 반도체 메모리장치
JP2894556B2 (ja) 半導体記憶装置
KR100220556B1 (ko) 단 펄스 형태의 리던던시 신호를 사용하는 디코더회로
JPS5683899A (en) Semiconductor memory device

Legal Events

Date Code Title Description
0001 Granted