GB9116165D0 - Semiconductor memory device with redundancy - Google Patents

Semiconductor memory device with redundancy

Info

Publication number
GB9116165D0
GB9116165D0 GB919116165A GB9116165A GB9116165D0 GB 9116165 D0 GB9116165 D0 GB 9116165D0 GB 919116165 A GB919116165 A GB 919116165A GB 9116165 A GB9116165 A GB 9116165A GB 9116165 D0 GB9116165 D0 GB 9116165D0
Authority
GB
United Kingdom
Prior art keywords
row address
memory device
transfer path
path
operation mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB919116165A
Other versions
GB2256070A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9116165D0 publication Critical patent/GB9116165D0/en
Publication of GB2256070A publication Critical patent/GB2256070A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

A semiconductor memory device, with redundancy device, prevents access time of a row address from being delayed in a normal operation mode. By using a mode detect signal generated by detecting whether or not the memory device will be repaired, the row address is directly accessed without passing through a delay circuit in the normal operation mode, while the access of the row address is delayed in the redundant operation mode. To this end, the device comprises a detecting circuit for generating the mode detect signal MD in dependence upon turning on/off of a fuse 116, a first transfer path 201 transferring a buffered row address without delay, a second transfer path 202 delaying the buffered row address through a delay circuit 130, and a path select circuit 120 selecting either the first transfer path 201 or the second transfer path 202 in dependence upon the mode detect signal MD, to transfer a signal of a selected path to a boost clock generator. <IMAGE>
GB9116165A 1991-05-24 1991-07-26 Semiconductor memory device with redundancy Withdrawn GB2256070A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008454A KR940002272B1 (en) 1991-05-24 1991-05-24 Semiconductor memory device with redundency

Publications (2)

Publication Number Publication Date
GB9116165D0 true GB9116165D0 (en) 1991-09-11
GB2256070A GB2256070A (en) 1992-11-25

Family

ID=19314872

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9116165A Withdrawn GB2256070A (en) 1991-05-24 1991-07-26 Semiconductor memory device with redundancy

Country Status (7)

Country Link
JP (1) JPH04346000A (en)
KR (1) KR940002272B1 (en)
DE (1) DE4124572A1 (en)
FR (1) FR2676844A1 (en)
GB (1) GB2256070A (en)
IT (1) IT1251003B (en)
TW (1) TW217455B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960013858B1 (en) * 1994-02-03 1996-10-10 현대전자산업 주식회사 Data output buffer control circuit
KR0172844B1 (en) * 1995-12-11 1999-03-30 문정환 Repair circuit of semiconductor memory
GB9609834D0 (en) * 1996-05-10 1996-07-17 Memory Corp Plc Semiconductor device
KR100400307B1 (en) 2001-05-09 2003-10-01 주식회사 하이닉스반도체 Semiconductor memory device having row repair circuit
KR100414738B1 (en) * 2001-12-21 2004-01-13 주식회사 하이닉스반도체 Control device of bitline sensing using fuse

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS59117792A (en) * 1982-12-24 1984-07-07 Hitachi Ltd Semiconductor storage device provided with redundancy circuit
JPS59203299A (en) * 1983-05-06 1984-11-17 Nec Corp Clock generator of memory with redundancy bit
JPS62222500A (en) * 1986-03-20 1987-09-30 Fujitsu Ltd Semiconductor memory device
JPS63244494A (en) * 1987-03-31 1988-10-11 Toshiba Corp Semiconductor storage device
JP2776835B2 (en) * 1988-07-08 1998-07-16 株式会社日立製作所 Semiconductor memory having redundant circuit for defect relief

Also Published As

Publication number Publication date
KR920022148A (en) 1992-12-19
DE4124572C2 (en) 1993-07-01
JPH04346000A (en) 1992-12-01
TW217455B (en) 1993-12-11
DE4124572A1 (en) 1992-11-26
ITMI912229A0 (en) 1991-08-08
GB2256070A (en) 1992-11-25
KR940002272B1 (en) 1994-03-19
IT1251003B (en) 1995-04-28
ITMI912229A1 (en) 1993-02-08
FR2676844A1 (en) 1992-11-27

Similar Documents

Publication Publication Date Title
TW345661B (en) Semiconductor memory device and its driving method
GB8524042D0 (en) Semiconductor memory
EP0399240A3 (en) Semiconductor memory device
KR880011801A (en) Semiconductor memory
KR890008829A (en) Semiconductor memory
TW326530B (en) Memory device with reduced number of fuses
EP0124900A3 (en) Reduntant type memory circuit with an improved clock generator
EP0376245A3 (en) Semiconductors memory device provided with an improved redundant decoder
TW430806B (en) Memory device having row decoder
TW363188B (en) Semiconductor memory device
MY120522A (en) Redundant memory array.
GB9116165D0 (en) Semiconductor memory device with redundancy
KR960012032A (en) Semiconductor memory
KR900013621A (en) Semiconductor device
KR930003139A (en) Semiconductor memory
EP0352730A3 (en) Semiconductor memory device provided with an improved system for detecting the positions using a redundant structure
JPS57212690A (en) Dynamic mos memory device
JPH06195975A (en) Memory circuit
TW328602B (en) Camera system and semiconductor memory circuit for image thereof
KR960019307A (en) Semiconductor memory device
JPS56100A (en) Semiconductor memory device
JPS57179998A (en) Memory device having redundancy
JPS5683899A (en) Semiconductor memory device
KR960038975A (en) Semiconductor memory device with extended data output mode
JPS5642863A (en) Fault information setting circuit

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)