GB8524042D0 - Semiconductor memory - Google Patents

Semiconductor memory


Publication number
GB8524042D0 GB8524042A GB8524042A GB8524042D0 GB 8524042 D0 GB8524042 D0 GB 8524042D0 GB 8524042 A GB8524042 A GB 8524042A GB 8524042 A GB8524042 A GB 8524042A GB 8524042 D0 GB8524042 D0 GB 8524042D0
United Kingdom
Prior art keywords
data line
data lines
storage means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Application number
Other versions
GB2165971A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP59218480A priority Critical patent/JPS6199999A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8524042D0 publication Critical patent/GB8524042D0/en
Publication of GB2165971A publication Critical patent/GB2165971A/en
Application status is Withdrawn legal-status Critical



    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder


In a multi-bit semiconductor memory having a redundant memory YR-ARY, any faulty data line CD is replaced with a redundant data line. To decrease the number of redundant data lines required when a plurality of data lines are selected at once, the semiconductor memory is furnished therein with first storage means (MMo Fig. 3) for forming signals necessary for an address comparing operation in an address comparing circuit (ACo-ACn) and also second storage means (DM1...DM3...) for forming signals indicative of data line positions to be remedied. When a faulty address has been detected as the result of the address comparing operation, the second storage means is referred to, and the data line indicated by the second storage means is replaced with the redundant data line. This arrangement can decrease the number of the redundant data lines when compared with an arrangement wherein all the data lines to be simultaneously selected are replaced with redundant data lines. <IMAGE>
GB8524042A 1984-10-19 1985-09-30 A semiconductor memory Withdrawn GB2165971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59218480A JPS6199999A (en) 1984-10-19 1984-10-19 Semiconductor storage device

Publications (2)

Publication Number Publication Date
GB8524042D0 true GB8524042D0 (en) 1985-11-06
GB2165971A GB2165971A (en) 1986-04-23



Family Applications (1)

Application Number Title Priority Date Filing Date
GB8524042A Withdrawn GB2165971A (en) 1984-10-19 1985-09-30 A semiconductor memory

Country Status (3)

Country Link
JP (1) JPS6199999A (en)
DE (1) DE3537015A1 (en)
GB (1) GB2165971A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6238599A (en) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp Semiconductor memory device
US5146574A (en) * 1989-06-27 1992-09-08 Sf2 Corporation Method and circuit for programmable selecting a variable sequence of element using write-back
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
US5140592A (en) * 1990-03-02 1992-08-18 Sf2 Corporation Disk array system
US5233618A (en) * 1990-03-02 1993-08-03 Micro Technology, Inc. Data correcting applicable to redundant arrays of independent disks
US5388243A (en) * 1990-03-09 1995-02-07 Mti Technology Corporation Multi-sort mass storage device announcing its active paths without deactivating its ports in a network architecture
US5325497A (en) * 1990-03-29 1994-06-28 Micro Technology, Inc. Method and apparatus for assigning signatures to identify members of a set of mass of storage devices
US5212785A (en) * 1990-04-06 1993-05-18 Micro Technology, Inc. Apparatus and method for controlling data flow between a computer and memory devices
US5233692A (en) * 1990-04-06 1993-08-03 Micro Technology, Inc. Enhanced interface permitting multiple-byte parallel transfers of control information and data on a small computer system interface (SCSI) communication bus and a mass storage system incorporating the enhanced interface
US5214778A (en) * 1990-04-06 1993-05-25 Micro Technology, Inc. Resource management in a multiple resource system
US5265054A (en) * 1990-12-14 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with precharged redundancy multiplexing
EP0490680B1 (en) * 1990-12-14 1996-10-02 SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.) A semiconductor memory with multiplexed redundancy
EP0514664A3 (en) * 1991-05-20 1993-05-26 International Business Machines Corporation Dynamic random access memory with a redundancy decoder
KR940008213B1 (en) * 1991-12-31 1994-09-08 정몽헌 Input/outout select circuit of column repair
US5295102A (en) * 1992-01-31 1994-03-15 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved redundant sense amplifier control
US5268866A (en) * 1992-03-02 1993-12-07 Motorola, Inc. Memory with column redundancy and localized column redundancy control signals
US5608678A (en) * 1995-07-31 1997-03-04 Sgs-Thomson Microelectronics, Inc. Column redundancy of a multiple block memory architecture
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US6259309B1 (en) * 1999-05-05 2001-07-10 International Business Machines Corporation Method and apparatus for the replacement of non-operational metal lines in DRAMS
JP4900310B2 (en) * 2008-04-17 2012-03-21 富士通セミコンダクター株式会社 Semiconductor memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607336A (en) * 1975-07-03 1977-01-05 Texas Instruments Inc From celled addressable systems, such as memory arrays.
DE3043651A1 (en) * 1979-11-19 1981-08-27 Texas Instruments Inc MOS read-write memory with spare cells for malfunction handling - has spare cells accessed by inbuilt ROM stages and has read differential amplifier in each column
US4358833A (en) * 1980-09-30 1982-11-09 Intel Corporation Memory redundancy apparatus for single chip memories
JPH0263279B2 (en) * 1982-01-29 1990-12-27 Tokyo Shibaura Electric Co
US4462091A (en) * 1982-02-26 1984-07-24 International Business Machines Corporation Word group redundancy scheme
US4485459A (en) * 1982-09-20 1984-11-27 Fairchild Camera & Instrument Corp. Redundant columns for byte wide memories
JPH0670880B2 (en) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム A semiconductor memory device
JPH0156478B2 (en) * 1983-02-17 1989-11-30 Mitsubishi Electric Corp
DE3311427A1 (en) * 1983-03-29 1984-10-04 Siemens Ag Integrated dynamic random access memory

Also Published As

Publication number Publication date
JPS6199999A (en) 1986-05-19
DE3537015A1 (en) 1986-05-15
GB2165971A (en) 1986-04-23

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)