JPS6199999A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6199999A
JPS6199999A JP59218480A JP21848084A JPS6199999A JP S6199999 A JPS6199999 A JP S6199999A JP 59218480 A JP59218480 A JP 59218480A JP 21848084 A JP21848084 A JP 21848084A JP S6199999 A JPS6199999 A JP S6199999A
Authority
JP
Japan
Prior art keywords
defective
address
data line
redundancy
provided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59218480A
Inventor
Joji Okada
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59218480A priority Critical patent/JPS6199999A/en
Publication of JPS6199999A publication Critical patent/JPS6199999A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Abstract

PURPOSE: To simplify a necessary redundancy circuit by storing a defective address signal and a defective bit address in said signal, as defective information, and switching only a data line which has become defective actually, to a redundancy data line.
CONSTITUTION: Redundancy memory arrays YR-ARY1, YR-ARY2 are provided on memory arrays M-ARY1, M-ARY2, respectively, and the redundancy memory array is constituted of only one complementary data line, although the memory array is constituted of eight pairs of complementary data lines. A column switch C-SW1 and C-SW2 are provided with a switching circuit which is connected selectively to the redundancy data line. Also, an address storage means for storing a defective address signal and a defective bit address, and an address conveyor are provided. The address conveyor AC detects a designation of a defective address, inhibits a selecting operation of a defective data line in the address, and also connects the redundancy data line provided on the redundancy use memory array, to a common complementary data line corresponding to a defective bit.
COPYRIGHT: (C)1986,JPO&Japio
JP59218480A 1984-10-19 1984-10-19 Semiconductor storage device Pending JPS6199999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59218480A JPS6199999A (en) 1984-10-19 1984-10-19 Semiconductor storage device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59218480A JPS6199999A (en) 1984-10-19 1984-10-19 Semiconductor storage device
GB8524042A GB2165971A (en) 1984-10-19 1985-09-30 A semiconductor memory
DE19853537015 DE3537015A1 (en) 1984-10-19 1985-10-17 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS6199999A true JPS6199999A (en) 1986-05-19

Family

ID=16720587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59218480A Pending JPS6199999A (en) 1984-10-19 1984-10-19 Semiconductor storage device

Country Status (3)

Country Link
JP (1) JPS6199999A (en)
DE (1) DE3537015A1 (en)
GB (1) GB2165971A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140592A (en) * 1990-03-02 1992-08-18 Sf2 Corporation Disk array system
US5146574A (en) * 1989-06-27 1992-09-08 Sf2 Corporation Method and circuit for programmable selecting a variable sequence of element using write-back
US5212785A (en) * 1990-04-06 1993-05-18 Micro Technology, Inc. Apparatus and method for controlling data flow between a computer and memory devices
US5214778A (en) * 1990-04-06 1993-05-25 Micro Technology, Inc. Resource management in a multiple resource system
JPH05166395A (en) * 1991-05-20 1993-07-02 Internatl Business Mach Corp <Ibm> Storing device module including redundant decoder
US5233692A (en) * 1990-04-06 1993-08-03 Micro Technology, Inc. Enhanced interface permitting multiple-byte parallel transfers of control information and data on a small computer system interface (SCSI) communication bus and a mass storage system incorporating the enhanced interface
JPH0676560A (en) * 1991-12-31 1994-03-18 Hyundai Electron Ind Co Ltd Input/output selection circuit for column repair
JPH0689595A (en) * 1990-02-13 1994-03-29 Internatl Business Mach Corp <Ibm> Dynamic random access memory provided with on chip ecc and redundant constitution of optimized bit and word
US5325497A (en) * 1990-03-29 1994-06-28 Micro Technology, Inc. Method and apparatus for assigning signatures to identify members of a set of mass of storage devices
US5388243A (en) * 1990-03-09 1995-02-07 Mti Technology Corporation Multi-sort mass storage device announcing its active paths without deactivating its ports in a network architecture
US5469453A (en) * 1990-03-02 1995-11-21 Mti Technology Corporation Data corrections applicable to redundant arrays of independent disks
JP2008210513A (en) * 2008-04-17 2008-09-11 Fujitsu Ltd Semiconductor memory

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6238599A (en) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp Semiconductor memory device
US5265054A (en) * 1990-12-14 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with precharged redundancy multiplexing
DE69122481D1 (en) * 1990-12-14 1996-11-07 Sgs Thomson Microelectronics Semiconductor memory with multiplexed redundancy
US5295102A (en) * 1992-01-31 1994-03-15 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved redundant sense amplifier control
US5268866A (en) * 1992-03-02 1993-12-07 Motorola, Inc. Memory with column redundancy and localized column redundancy control signals
US5608678A (en) * 1995-07-31 1997-03-04 Sgs-Thomson Microelectronics, Inc. Column redundancy of a multiple block memory architecture
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US6259309B1 (en) * 1999-05-05 2001-07-10 International Business Machines Corporation Method and apparatus for the replacement of non-operational metal lines in DRAMS

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607336A (en) * 1975-07-03 1977-01-05 Texas Instruments Inc From celled addressable systems, such as memory arrays.
DE3043651A1 (en) * 1979-11-19 1981-08-27 Texas Instruments Inc MOS read-write memory with spare cells for malfunction handling - has spare cells accessed by inbuilt ROM stages and has read differential amplifier in each column
US4358833A (en) * 1980-09-30 1982-11-09 Intel Corporation Memory redundancy apparatus for single chip memories
JPH0263279B2 (en) * 1982-01-29 1990-12-27 Tokyo Shibaura Electric Co
US4462091A (en) * 1982-02-26 1984-07-24 International Business Machines Corporation Word group redundancy scheme
US4485459A (en) * 1982-09-20 1984-11-27 Fairchild Camera & Instrument Corp. Redundant columns for byte wide memories
JPH0670880B2 (en) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム A semiconductor memory device
JPH0156478B2 (en) * 1983-02-17 1989-11-30 Mitsubishi Electric Corp
DE3311427A1 (en) * 1983-03-29 1984-10-04 Siemens Ag Integrated dynamic random access memory

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146574A (en) * 1989-06-27 1992-09-08 Sf2 Corporation Method and circuit for programmable selecting a variable sequence of element using write-back
US5349686A (en) * 1989-06-27 1994-09-20 Mti Technology Corporation Method and circuit for programmably selecting a variable sequence of elements using write-back
JPH0689595A (en) * 1990-02-13 1994-03-29 Internatl Business Mach Corp <Ibm> Dynamic random access memory provided with on chip ecc and redundant constitution of optimized bit and word
US5469453A (en) * 1990-03-02 1995-11-21 Mti Technology Corporation Data corrections applicable to redundant arrays of independent disks
US5140592A (en) * 1990-03-02 1992-08-18 Sf2 Corporation Disk array system
US5388243A (en) * 1990-03-09 1995-02-07 Mti Technology Corporation Multi-sort mass storage device announcing its active paths without deactivating its ports in a network architecture
US5325497A (en) * 1990-03-29 1994-06-28 Micro Technology, Inc. Method and apparatus for assigning signatures to identify members of a set of mass of storage devices
US5212785A (en) * 1990-04-06 1993-05-18 Micro Technology, Inc. Apparatus and method for controlling data flow between a computer and memory devices
US5233692A (en) * 1990-04-06 1993-08-03 Micro Technology, Inc. Enhanced interface permitting multiple-byte parallel transfers of control information and data on a small computer system interface (SCSI) communication bus and a mass storage system incorporating the enhanced interface
US5361347A (en) * 1990-04-06 1994-11-01 Mti Technology Corporation Resource management in a multiple resource system where each resource includes an availability state stored in a memory of the resource
US5214778A (en) * 1990-04-06 1993-05-25 Micro Technology, Inc. Resource management in a multiple resource system
US5454085A (en) * 1990-04-06 1995-09-26 Mti Technology Corporation Method and apparatus for an enhanced computer system interface
JPH05166395A (en) * 1991-05-20 1993-07-02 Internatl Business Mach Corp <Ibm> Storing device module including redundant decoder
US5901093A (en) * 1991-05-20 1999-05-04 International Business Machines Corporation Redundancy architecture and method for block write access cycles permitting defective memory line replacement
JPH0676560A (en) * 1991-12-31 1994-03-18 Hyundai Electron Ind Co Ltd Input/output selection circuit for column repair
JP2008210513A (en) * 2008-04-17 2008-09-11 Fujitsu Ltd Semiconductor memory

Also Published As

Publication number Publication date
GB2165971A (en) 1986-04-23
DE3537015A1 (en) 1986-05-15
GB8524042D0 (en) 1985-11-06

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