GB2256070A - Semiconductor memory device with redundancy - Google Patents

Semiconductor memory device with redundancy Download PDF

Info

Publication number
GB2256070A
GB2256070A GB9116165A GB9116165A GB2256070A GB 2256070 A GB2256070 A GB 2256070A GB 9116165 A GB9116165 A GB 9116165A GB 9116165 A GB9116165 A GB 9116165A GB 2256070 A GB2256070 A GB 2256070A
Authority
GB
United Kingdom
Prior art keywords
transfer path
memory device
semiconductor memory
signal
detect signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9116165A
Other languages
English (en)
Other versions
GB9116165D0 (en
Inventor
Hyun-Soon Jang
Kyu-Chan Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9116165D0 publication Critical patent/GB9116165D0/en
Publication of GB2256070A publication Critical patent/GB2256070A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
GB9116165A 1991-05-24 1991-07-26 Semiconductor memory device with redundancy Withdrawn GB2256070A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008454A KR940002272B1 (ko) 1991-05-24 1991-05-24 리던던시 기능을 가지는 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
GB9116165D0 GB9116165D0 (en) 1991-09-11
GB2256070A true GB2256070A (en) 1992-11-25

Family

ID=19314872

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9116165A Withdrawn GB2256070A (en) 1991-05-24 1991-07-26 Semiconductor memory device with redundancy

Country Status (7)

Country Link
JP (1) JPH04346000A (it)
KR (1) KR940002272B1 (it)
DE (1) DE4124572A1 (it)
FR (1) FR2676844A1 (it)
GB (1) GB2256070A (it)
IT (1) IT1251003B (it)
TW (1) TW217455B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997043713A1 (en) * 1996-05-10 1997-11-20 Memory Corporation Plc Substitute memory timing circuit

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960013858B1 (ko) * 1994-02-03 1996-10-10 현대전자산업 주식회사 데이타 출력버퍼 제어회로
KR0172844B1 (ko) * 1995-12-11 1999-03-30 문정환 반도체 메모리 소자의 리페어 회로
KR100400307B1 (ko) 2001-05-09 2003-10-01 주식회사 하이닉스반도체 로오 리페어회로를 가진 반도체 메모리 장치
KR100414738B1 (ko) * 2001-12-21 2004-01-13 주식회사 하이닉스반도체 퓨즈를 이용한 비트라인 센싱 제어 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124900A2 (en) * 1983-05-06 1984-11-14 Nec Corporation Reduntant type memory circuit with an improved clock generator
EP0242981A2 (en) * 1986-03-20 1987-10-28 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
US5021944A (en) * 1988-07-08 1991-06-04 Hitachi, Ltd. Semiconductor memory having redundancy circuit for relieving defects

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS59117792A (ja) * 1982-12-24 1984-07-07 Hitachi Ltd 冗長回路を備えた半導体記憶装置
JPS63244494A (ja) * 1987-03-31 1988-10-11 Toshiba Corp 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124900A2 (en) * 1983-05-06 1984-11-14 Nec Corporation Reduntant type memory circuit with an improved clock generator
EP0242981A2 (en) * 1986-03-20 1987-10-28 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
US5021944A (en) * 1988-07-08 1991-06-04 Hitachi, Ltd. Semiconductor memory having redundancy circuit for relieving defects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997043713A1 (en) * 1996-05-10 1997-11-20 Memory Corporation Plc Substitute memory timing circuit

Also Published As

Publication number Publication date
IT1251003B (it) 1995-04-28
KR940002272B1 (ko) 1994-03-19
ITMI912229A1 (it) 1993-02-08
DE4124572A1 (de) 1992-11-26
JPH04346000A (ja) 1992-12-01
FR2676844A1 (fr) 1992-11-27
GB9116165D0 (en) 1991-09-11
ITMI912229A0 (it) 1991-08-08
KR920022148A (ko) 1992-12-19
DE4124572C2 (it) 1993-07-01
TW217455B (it) 1993-12-11

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)