ITMI20051406A1 - Dispositivo di memoria a semiconduttore eseguente ringresco automatico nella modalita0 di autorinfresco - Google Patents

Dispositivo di memoria a semiconduttore eseguente ringresco automatico nella modalita0 di autorinfresco

Info

Publication number
ITMI20051406A1
ITMI20051406A1 IT001406A ITMI20051406A ITMI20051406A1 IT MI20051406 A1 ITMI20051406 A1 IT MI20051406A1 IT 001406 A IT001406 A IT 001406A IT MI20051406 A ITMI20051406 A IT MI20051406A IT MI20051406 A1 ITMI20051406 A1 IT MI20051406A1
Authority
IT
Italy
Prior art keywords
automatic
refreshing
self
memory device
semiconductor memory
Prior art date
Application number
IT001406A
Other languages
English (en)
Inventor
Jung-Bae Lee
Yun-Sang Lee
Taek-Seon Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI20051406A1 publication Critical patent/ITMI20051406A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
IT001406A 2004-07-21 2005-07-21 Dispositivo di memoria a semiconduttore eseguente ringresco automatico nella modalita0 di autorinfresco ITMI20051406A1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20040056967 2004-07-21
US11/169,241 US7164615B2 (en) 2004-07-21 2005-06-27 Semiconductor memory device performing auto refresh in the self refresh mode

Publications (1)

Publication Number Publication Date
ITMI20051406A1 true ITMI20051406A1 (it) 2006-01-22

Family

ID=36773366

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001406A ITMI20051406A1 (it) 2004-07-21 2005-07-21 Dispositivo di memoria a semiconduttore eseguente ringresco automatico nella modalita0 di autorinfresco

Country Status (4)

Country Link
US (1) US7164615B2 (it)
KR (1) KR100615608B1 (it)
CN (1) CN1783338B (it)
IT (1) ITMI20051406A1 (it)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7010642B2 (en) * 2000-01-05 2006-03-07 Rambus Inc. System featuring a controller device and a memory module that includes an integrated circuit buffer device and a plurality of integrated circuit memory devices
KR100543914B1 (ko) * 2003-04-30 2006-01-23 주식회사 하이닉스반도체 리프레쉬 동작시 피크 전류를 줄일 수 있는 반도체 메모리장치
KR100653688B1 (ko) * 2004-04-29 2006-12-04 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 리프레쉬 방법, 및 이장치를 위한 메모리 시스템
US8112655B2 (en) * 2005-04-21 2012-02-07 Violin Memory, Inc. Mesosynchronous data bus apparatus and method of data transmission
US9582449B2 (en) 2005-04-21 2017-02-28 Violin Memory, Inc. Interconnection system
US9384818B2 (en) * 2005-04-21 2016-07-05 Violin Memory Memory power management
EP1872192B1 (en) * 2005-04-21 2012-09-12 Violin Memory, Inc. Interconnection system
US7158434B2 (en) * 2005-04-29 2007-01-02 Infineon Technologies, Ag Self-refresh circuit with optimized power consumption
US7734866B2 (en) * 2005-08-04 2010-06-08 Rambus Inc. Memory with address-differentiated refresh rate to accommodate low-retention storage rows
US7444577B2 (en) * 2005-08-04 2008-10-28 Rambus Inc. Memory device testing to support address-differentiated refresh rates
US7565479B2 (en) * 2005-08-04 2009-07-21 Rambus Inc. Memory with refresh cycle donation to accommodate low-retention-storage rows
US7310018B2 (en) * 2005-08-23 2007-12-18 Micron Technology, Inc. Method and apparatus providing input buffer design using common-mode feedback
US7425847B2 (en) * 2006-02-03 2008-09-16 Micron Technology, Inc. Input buffer with optimal biasing and method thereof
JP4967452B2 (ja) * 2006-05-18 2012-07-04 富士通セミコンダクター株式会社 半導体メモリ
CN100530070C (zh) * 2006-11-24 2009-08-19 骆建军 基于flash的硬盘
JP4470185B2 (ja) * 2006-11-28 2010-06-02 エルピーダメモリ株式会社 半導体記憶装置
TWI376603B (en) * 2007-09-21 2012-11-11 Phison Electronics Corp Solid state disk storage system with a parallel accessing architecture and a solid state disk controller
US7936639B2 (en) 2007-09-27 2011-05-03 Micron Technology, Inc. System and method for processing signals in high speed DRAM
CN101425330B (zh) * 2007-10-31 2010-12-08 中国科学院空间科学与应用研究中心 一种同步动态存储器的刷新控制模块
US9465756B2 (en) * 2009-12-23 2016-10-11 Violin Memory Inc. Configurable interconnection system
KR20110093086A (ko) * 2010-02-11 2011-08-18 삼성전자주식회사 셀프 리프레쉬 동작 모드에서 내부 고 전원전압을 사용하는 반도체 메모리 장치 및 그에 따른 고 전원전압 인가방법
KR101053541B1 (ko) 2010-03-30 2011-08-03 주식회사 하이닉스반도체 반도체 메모리 장치
US8787443B2 (en) * 2010-10-05 2014-07-22 Microsoft Corporation Content adaptive deblocking during video encoding and decoding
JP2013030247A (ja) * 2011-07-28 2013-02-07 Elpida Memory Inc 情報処理システム
KR101897050B1 (ko) * 2012-05-04 2018-09-12 에스케이하이닉스 주식회사 반도체 장치
KR20130129786A (ko) * 2012-05-21 2013-11-29 에스케이하이닉스 주식회사 리프래쉬 방법과 이를 이용한 반도체 메모리 장치
KR101974108B1 (ko) * 2012-07-30 2019-08-23 삼성전자주식회사 리프레쉬 어드레스 생성기, 이를 포함하는 휘발성 메모리 장치 및 휘발성 메모리 장치의 리프레쉬 방법
KR20140104181A (ko) * 2013-02-20 2014-08-28 에스케이하이닉스 주식회사 반도체 메모리 시스템
KR20150098372A (ko) * 2014-02-20 2015-08-28 에스케이하이닉스 주식회사 반도체 메모리 장치를 포함하는 메모리 시스템 및 그의 리프레쉬 동작 방법
KR102205695B1 (ko) * 2014-09-05 2021-01-21 에스케이하이닉스 주식회사 리프레쉬 제어 회로 및 이를 이용한 반도체 장치
KR20160045461A (ko) * 2014-10-17 2016-04-27 에스케이하이닉스 주식회사 반도체 장치 및 그의 구동방법
KR102282971B1 (ko) * 2014-12-05 2021-07-29 삼성전자주식회사 반도체 메모리 장치, 및 상기 반도체 메모리 장치를 포함하는 메모리 시스템
KR20170045795A (ko) * 2015-10-20 2017-04-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR102717098B1 (ko) 2016-11-01 2024-10-15 삼성전자주식회사 단계별 저전력 상태들을 갖는 메모리 장치
KR20180077973A (ko) * 2016-12-29 2018-07-09 삼성전자주식회사 리프레쉬 동작을 제어하는 메모리 장치
US10490251B2 (en) 2017-01-30 2019-11-26 Micron Technology, Inc. Apparatuses and methods for distributing row hammer refresh events across a memory device
US10672449B2 (en) * 2017-10-20 2020-06-02 Micron Technology, Inc. Apparatus and methods for refreshing memory
US10170174B1 (en) * 2017-10-27 2019-01-01 Micron Technology, Inc. Apparatus and methods for refreshing memory
US10141041B1 (en) * 2017-11-01 2018-11-27 Micron Technology, Inc. Systems and methods for maintaining refresh operations of memory banks using a shared
US10262719B1 (en) * 2017-12-22 2019-04-16 Nanya Technology Corporation DRAM and refresh method thereof
US11017833B2 (en) 2018-05-24 2021-05-25 Micron Technology, Inc. Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling
US10573370B2 (en) 2018-07-02 2020-02-25 Micron Technology, Inc. Apparatus and methods for triggering row hammer address sampling
US10685696B2 (en) 2018-10-31 2020-06-16 Micron Technology, Inc. Apparatuses and methods for access based refresh timing
WO2020117686A1 (en) 2018-12-03 2020-06-11 Micron Technology, Inc. Semiconductor device performing row hammer refresh operation
US11037616B2 (en) * 2018-12-14 2021-06-15 Micron Technology, Inc. Apparatuses and methods for refresh operations in semiconductor memories
CN117198356A (zh) 2018-12-21 2023-12-08 美光科技公司 用于目标刷新操作的时序交错的设备和方法
US10957377B2 (en) 2018-12-26 2021-03-23 Micron Technology, Inc. Apparatuses and methods for distributed targeted refresh operations
US11615831B2 (en) * 2019-02-26 2023-03-28 Micron Technology, Inc. Apparatuses and methods for memory mat refresh sequencing
US11227649B2 (en) 2019-04-04 2022-01-18 Micron Technology, Inc. Apparatuses and methods for staggered timing of targeted refresh operations
US11069393B2 (en) 2019-06-04 2021-07-20 Micron Technology, Inc. Apparatuses and methods for controlling steal rates
US10978132B2 (en) 2019-06-05 2021-04-13 Micron Technology, Inc. Apparatuses and methods for staggered timing of skipped refresh operations
US11302374B2 (en) 2019-08-23 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic refresh allocation
US11302377B2 (en) 2019-10-16 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic targeted refresh steals
US11309010B2 (en) 2020-08-14 2022-04-19 Micron Technology, Inc. Apparatuses, systems, and methods for memory directed access pause
US11380382B2 (en) 2020-08-19 2022-07-05 Micron Technology, Inc. Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit
US11348631B2 (en) 2020-08-19 2022-05-31 Micron Technology, Inc. Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed
US11557331B2 (en) 2020-09-23 2023-01-17 Micron Technology, Inc. Apparatuses and methods for controlling refresh operations
US11222686B1 (en) 2020-11-12 2022-01-11 Micron Technology, Inc. Apparatuses and methods for controlling refresh timing
US11264079B1 (en) 2020-12-18 2022-03-01 Micron Technology, Inc. Apparatuses and methods for row hammer based cache lockdown
US12027198B2 (en) * 2021-11-22 2024-07-02 Nvidia Corporation Mitigating duty cycle distortion degradation due to device aging on high-bandwidth memory interface
US12154611B2 (en) 2022-02-10 2024-11-26 Micron Technology, Inc. Apparatuses and methods for sample rate adjustment
US12112787B2 (en) 2022-04-28 2024-10-08 Micron Technology, Inc. Apparatuses and methods for access based targeted refresh operations
US12125514B2 (en) 2022-04-28 2024-10-22 Micron Technology, Inc. Apparatuses and methods for access based refresh operations

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627791A (en) * 1996-02-16 1997-05-06 Micron Technology, Inc. Multiple bank memory with auto refresh to specified bank
US6392948B1 (en) * 1996-08-29 2002-05-21 Micron Technology, Inc. Semiconductor device with self refresh test mode
US5870347A (en) * 1997-03-11 1999-02-09 Micron Technology, Inc. Multi-bank memory input/output line selection
US6178130B1 (en) * 1997-10-10 2001-01-23 Rambus Inc. Apparatus and method for refreshing subsets of memory devices in a memory system
KR100518508B1 (ko) * 1997-10-30 2005-11-29 삼성전자주식회사 반도체메모리장치
CN1137491C (zh) * 1998-03-30 2004-02-04 西门子公司 动态随机存取存储器中的译码自动刷新模式
JP2001035152A (ja) * 1999-07-22 2001-02-09 Hitachi Ltd 半導体記憶装置
DE19955601C2 (de) * 1999-11-18 2001-11-29 Infineon Technologies Ag Verfahren zur Durchführung von Auto-Refresh-Sequenzen an einem DRAM
US6859407B1 (en) * 2004-01-14 2005-02-22 Infineon Technologies Ag Memory with auto refresh to designated banks

Also Published As

Publication number Publication date
KR20060049862A (ko) 2006-05-19
CN1783338A (zh) 2006-06-07
US7164615B2 (en) 2007-01-16
KR100615608B1 (ko) 2006-08-25
US20060018174A1 (en) 2006-01-26
CN1783338B (zh) 2012-03-21

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