DE602005016854D1 - Speichervorrichtung - Google Patents
SpeichervorrichtungInfo
- Publication number
- DE602005016854D1 DE602005016854D1 DE602005016854T DE602005016854T DE602005016854D1 DE 602005016854 D1 DE602005016854 D1 DE 602005016854D1 DE 602005016854 T DE602005016854 T DE 602005016854T DE 602005016854 T DE602005016854 T DE 602005016854T DE 602005016854 D1 DE602005016854 D1 DE 602005016854D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5614—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004062131A JP2005252068A (ja) | 2004-03-05 | 2004-03-05 | 記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005016854D1 true DE602005016854D1 (de) | 2009-11-12 |
Family
ID=34747694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005016854T Active DE602005016854D1 (de) | 2004-03-05 | 2005-02-10 | Speichervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7092278B2 (de) |
EP (1) | EP1571673B1 (de) |
JP (1) | JP2005252068A (de) |
KR (1) | KR101043837B1 (de) |
CN (1) | CN100468571C (de) |
DE (1) | DE602005016854D1 (de) |
TW (1) | TWI270075B (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4670252B2 (ja) * | 2004-01-20 | 2011-04-13 | ソニー株式会社 | 記憶装置 |
JP2006114087A (ja) * | 2004-10-13 | 2006-04-27 | Sony Corp | 記憶装置及び半導体装置 |
US20060256608A1 (en) * | 2005-05-11 | 2006-11-16 | Spansion Llc | Resistive memory device with improved data retention and reduced power |
US7733684B2 (en) | 2005-12-13 | 2010-06-08 | Kabushiki Kaisha Toshiba | Data read/write device |
JP4816088B2 (ja) * | 2006-01-11 | 2011-11-16 | ソニー株式会社 | 記憶装置の初期化方法 |
FR2905028B1 (fr) * | 2006-08-21 | 2008-12-19 | Commissariat Energie Atomique | Dispositif de memoire electrochimique |
EP2076923B1 (de) * | 2006-10-24 | 2012-08-15 | Semiconductor Energy Laboratory Co, Ltd. | Halbleiteranordnung mit einer speicheranordnung und verfahren zu ihrer ansteuerung |
US7636264B2 (en) * | 2007-02-09 | 2009-12-22 | Atmel Corporation | Single-ended sense amplifier for very low voltage applications |
US7859883B2 (en) * | 2007-05-14 | 2010-12-28 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Recordable electrical memory |
JP4792010B2 (ja) | 2007-06-12 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
JP4792007B2 (ja) | 2007-06-12 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
JP4792009B2 (ja) | 2007-06-12 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
JP4792006B2 (ja) | 2007-06-12 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
WO2009025037A1 (ja) * | 2007-08-22 | 2009-02-26 | Fujitsu Limited | 抵抗変化型素子 |
KR100895389B1 (ko) * | 2007-09-06 | 2009-04-30 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 |
US7642815B2 (en) * | 2007-09-14 | 2010-01-05 | Atmel Corporation | Sense amplifier |
KR101571763B1 (ko) * | 2008-07-07 | 2015-12-07 | 삼성전자주식회사 | 적응적 제어 스킴을 가지는 메모리 장치 및 그 동작 방법 |
FR2928768B1 (fr) | 2008-03-13 | 2010-04-09 | Commissariat Energie Atomique | Dispositif de memoire electrochimique non-volatile |
US7813201B2 (en) * | 2008-07-08 | 2010-10-12 | Atmel Corporation | Differential sense amplifier |
JP5422984B2 (ja) * | 2008-12-08 | 2014-02-19 | 富士通株式会社 | 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法 |
KR101642819B1 (ko) * | 2009-08-31 | 2016-07-26 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 구동 방법, 그것을 포함하는 메모리 시스템 |
WO2013012423A1 (en) * | 2011-07-20 | 2013-01-24 | Hewlett-Packard Development Company, L.P. | Memristor structure with a dopant source |
WO2016186086A1 (ja) * | 2015-05-15 | 2016-11-24 | 国立大学法人東北大学 | 抵抗変化型素子を備えた記憶回路 |
FR3061599B1 (fr) * | 2017-01-02 | 2019-05-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'utilisation de composants electrochimiques pour le stockage d'energie et d'information et circuit electronique associe |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
EP1159743B1 (de) * | 1999-02-11 | 2007-05-02 | Arizona Board of Regents | Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6426907B1 (en) * | 2001-01-24 | 2002-07-30 | Infineon Technologies North America Corp. | Reference for MRAM cell |
WO2003079463A2 (en) * | 2002-03-15 | 2003-09-25 | Axon Technologies Corporation | Programmable structure, an array including the structure, and methods of forming the same |
JP2003281878A (ja) * | 2002-03-22 | 2003-10-03 | Tdk Corp | 抵抗素子を用いたデータ記憶素子及びその製造方法 |
JP3894030B2 (ja) * | 2002-04-17 | 2007-03-14 | ソニー株式会社 | 抵抗変化記憶素子を用いた記憶装置及び同装置の参照抵抗値決定方法 |
WO2003094227A1 (en) * | 2002-04-30 | 2003-11-13 | Japan Science And Technology Agency | Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device |
US6665216B1 (en) * | 2002-07-23 | 2003-12-16 | Macronix International Co., Ltd. | Apparatus and system for reading non-volatile memory with dual reference cells |
US6965521B2 (en) * | 2003-07-31 | 2005-11-15 | Bae Systems, Information And Electronics Systems Integration, Inc. | Read/write circuit for accessing chalcogenide non-volatile memory cells |
JP2005150243A (ja) * | 2003-11-12 | 2005-06-09 | Toshiba Corp | 相転移メモリ |
-
2004
- 2004-03-05 JP JP2004062131A patent/JP2005252068A/ja active Pending
-
2005
- 2005-02-10 EP EP05250760A patent/EP1571673B1/de not_active Expired - Fee Related
- 2005-02-10 DE DE602005016854T patent/DE602005016854D1/de active Active
- 2005-02-21 TW TW094105066A patent/TWI270075B/zh active
- 2005-03-03 US US11/071,082 patent/US7092278B2/en active Active
- 2005-03-04 KR KR1020050018099A patent/KR101043837B1/ko active IP Right Grant
- 2005-03-07 CN CNB2005100526450A patent/CN100468571C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP1571673A2 (de) | 2005-09-07 |
CN1664957A (zh) | 2005-09-07 |
CN100468571C (zh) | 2009-03-11 |
US20050195634A1 (en) | 2005-09-08 |
KR20060043406A (ko) | 2006-05-15 |
TW200605077A (en) | 2006-02-01 |
EP1571673B1 (de) | 2009-09-30 |
US7092278B2 (en) | 2006-08-15 |
TWI270075B (en) | 2007-01-01 |
EP1571673A3 (de) | 2006-05-31 |
JP2005252068A (ja) | 2005-09-15 |
KR101043837B1 (ko) | 2011-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |