IT8422073A0 - Dispositivo a circuito integrato a semiconduttori in particolare includenti dispositivi di memoria. - Google Patents

Dispositivo a circuito integrato a semiconduttori in particolare includenti dispositivi di memoria.

Info

Publication number
IT8422073A0
IT8422073A0 IT8422073A IT2207384A IT8422073A0 IT 8422073 A0 IT8422073 A0 IT 8422073A0 IT 8422073 A IT8422073 A IT 8422073A IT 2207384 A IT2207384 A IT 2207384A IT 8422073 A0 IT8422073 A0 IT 8422073A0
Authority
IT
Italy
Prior art keywords
integrated circuit
memory devices
semiconductor integrated
circuit device
including memory
Prior art date
Application number
IT8422073A
Other languages
English (en)
Other versions
IT1176492B (it
Inventor
Makio Uchida
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8422073A0 publication Critical patent/IT8422073A0/it
Application granted granted Critical
Publication of IT1176492B publication Critical patent/IT1176492B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT22073/84A 1983-07-27 1984-07-26 Dispositivo a circuito integrato a semiconduttori in particolare includenti dispositivi di memoria IT1176492B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13581583A JPH073862B2 (ja) 1983-07-27 1983-07-27 半導体記憶装置

Publications (2)

Publication Number Publication Date
IT8422073A0 true IT8422073A0 (it) 1984-07-26
IT1176492B IT1176492B (it) 1987-08-18

Family

ID=15160451

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22073/84A IT1176492B (it) 1983-07-27 1984-07-26 Dispositivo a circuito integrato a semiconduttori in particolare includenti dispositivi di memoria

Country Status (8)

Country Link
US (3) US4782465A (it)
JP (1) JPH073862B2 (it)
KR (1) KR920008397B1 (it)
DE (1) DE3427423C2 (it)
FR (1) FR2549997B1 (it)
GB (1) GB2144268B (it)
HK (1) HK40490A (it)
IT (1) IT1176492B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079949B2 (ja) * 1986-02-13 1995-02-01 日本電気株式会社 半導体記憶装置
US5204842A (en) * 1987-08-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory with memory unit comprising a plurality of memory blocks
JPH0233644A (ja) * 1988-07-15 1990-02-02 Ncr Corp フレキシブル基板を用いた固有コードの設定方法及び装置
GB8906145D0 (en) * 1989-03-17 1989-05-04 Algotronix Ltd Configurable cellular array
US5343406A (en) * 1989-07-28 1994-08-30 Xilinx, Inc. Distributed memory architecture for a configurable logic array and method for using distributed memory
US5315130A (en) * 1990-03-30 1994-05-24 Tactical Fabs, Inc. Very high density wafer scale device architecture
US5252507A (en) * 1990-03-30 1993-10-12 Tactical Fabs, Inc. Very high density wafer scale device architecture
JP2564695B2 (ja) * 1990-09-14 1996-12-18 富士通株式会社 半導体記憶装置
JP3030991B2 (ja) * 1991-11-14 2000-04-10 日本電気株式会社 半導体集積回路
JP3533227B2 (ja) * 1992-09-10 2004-05-31 株式会社日立製作所 半導体記憶装置
WO1994017554A1 (en) * 1993-01-29 1994-08-04 Oki Electric Industry Co., Ltd. Semiconductor memory device
JP3179937B2 (ja) * 1993-05-01 2001-06-25 株式会社東芝 半導体装置
US5875149A (en) * 1997-02-06 1999-02-23 Hyndai Electronics America Word line driver for semiconductor memories
US6011746A (en) * 1997-02-06 2000-01-04 Hyundai Electronics America, Inc. Word line driver for semiconductor memories
US8135413B2 (en) * 1998-11-24 2012-03-13 Tracbeam Llc Platform and applications for wireless location and other complex services
DE19910353A1 (de) * 1999-03-09 2000-09-21 Siemens Ag Halbleiter-Festwertspeicheranordnung mit Substratkontakt und Polysilizium-Überbrückungszelle
US6259309B1 (en) 1999-05-05 2001-07-10 International Business Machines Corporation Method and apparatus for the replacement of non-operational metal lines in DRAMS
JP3983960B2 (ja) * 2000-07-14 2007-09-26 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法および半導体集積回路装置
US6462977B2 (en) 2000-08-17 2002-10-08 David Earl Butz Data storage device having virtual columns and addressing layers
US7283381B2 (en) 2000-08-17 2007-10-16 David Earl Butz System and methods for addressing a matrix incorporating virtual columns and addressing layers
US6901070B2 (en) * 2000-12-04 2005-05-31 Gautam Nag Kavipurapu Dynamically programmable integrated switching device using an asymmetric 5T1C cell
US6567294B1 (en) * 2002-02-13 2003-05-20 Agilent Technologies, Inc. Low power pre-charge high ROM array
US6815077B1 (en) * 2003-05-20 2004-11-09 Matrix Semiconductor, Inc. Low temperature, low-resistivity heavily doped p-type polysilicon deposition
US10215315B2 (en) 2008-09-05 2019-02-26 Parker-Hannifin Corporation Tube compression fitting and flared fitting used with connection body and method of making same
US9916904B2 (en) * 2009-02-02 2018-03-13 Qualcomm Incorporated Reducing leakage current in a memory device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL173572C (nl) * 1976-02-12 1984-02-01 Philips Nv Halfgeleiderinrichting.
US4142176A (en) * 1976-09-27 1979-02-27 Mostek Corporation Series read only memory structure
GB1575741A (en) * 1977-01-17 1980-09-24 Philips Electronic Associated Integrated circuits
US4140967A (en) * 1977-06-24 1979-02-20 International Business Machines Corporation Merged array PLA device, circuit, fabrication method and testing technique
JPS5819143B2 (ja) * 1977-09-30 1983-04-16 株式会社東芝 半導体メモリ装置
US4208727A (en) * 1978-06-15 1980-06-17 Texas Instruments Incorporated Semiconductor read only memory using MOS diodes
JPS5718356A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Semiconductor memory storage
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
US4739497A (en) * 1981-05-29 1988-04-19 Hitachi, Ltd. Semiconductor memory
JPS58140151A (ja) * 1982-02-16 1983-08-19 Nec Corp 半導体集積回路装置
JPS58199557A (ja) * 1982-05-15 1983-11-19 Toshiba Corp ダイナミツクメモリ装置
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置
US4679171A (en) * 1985-02-07 1987-07-07 Visic, Inc. MOS/CMOS memory cell

Also Published As

Publication number Publication date
FR2549997A1 (fr) 1985-02-01
JPS6028261A (ja) 1985-02-13
JPH073862B2 (ja) 1995-01-18
US4990992A (en) 1991-02-05
GB2144268B (en) 1987-09-03
US4782465A (en) 1988-11-01
DE3427423C2 (de) 1996-09-26
US5061980A (en) 1991-10-29
DE3427423A1 (de) 1985-02-14
GB8418407D0 (en) 1984-08-22
HK40490A (en) 1990-06-01
GB2144268A (en) 1985-02-27
KR850000798A (ko) 1985-03-09
IT1176492B (it) 1987-08-18
KR920008397B1 (ko) 1992-09-28
FR2549997B1 (fr) 1991-09-06

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970728