IT8547677A0 - Dispositivo a semiconduttore, in particolare circuito darlington, bipolare-mos integrato - Google Patents

Dispositivo a semiconduttore, in particolare circuito darlington, bipolare-mos integrato

Info

Publication number
IT8547677A0
IT8547677A0 IT8547677A IT4767785A IT8547677A0 IT 8547677 A0 IT8547677 A0 IT 8547677A0 IT 8547677 A IT8547677 A IT 8547677A IT 4767785 A IT4767785 A IT 4767785A IT 8547677 A0 IT8547677 A0 IT 8547677A0
Authority
IT
Italy
Prior art keywords
bipolar
semiconductor device
darlington circuit
mos integrated
mos
Prior art date
Application number
IT8547677A
Other languages
English (en)
Other versions
IT8547677A1 (it
IT1182194B (it
Inventor
Perry L Merrill
Rodney R Stoltenburg
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT8547677A0 publication Critical patent/IT8547677A0/it
Publication of IT8547677A1 publication Critical patent/IT8547677A1/it
Application granted granted Critical
Publication of IT1182194B publication Critical patent/IT1182194B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT47677/85A 1984-03-16 1985-02-13 Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato IT1182194B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/590,235 US4783694A (en) 1984-03-16 1984-03-16 Integrated bipolar-MOS semiconductor device with common collector and drain

Publications (3)

Publication Number Publication Date
IT8547677A0 true IT8547677A0 (it) 1985-02-13
IT8547677A1 IT8547677A1 (it) 1986-08-13
IT1182194B IT1182194B (it) 1987-09-30

Family

ID=24361413

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47677/85A IT1182194B (it) 1984-03-16 1985-02-13 Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato

Country Status (4)

Country Link
US (1) US4783694A (it)
EP (1) EP0174318A1 (it)
IT (1) IT1182194B (it)
WO (1) WO1985004285A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2614154A1 (fr) * 1987-04-17 1988-10-21 Thomson Semiconducteurs Reseau d'aide a la commutation d'un transistor bipolaire de puissance
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH0831541B2 (ja) * 1989-02-16 1996-03-27 株式会社東芝 半導体集積回路
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device
US5097305A (en) * 1991-02-19 1992-03-17 Synaptics Corporation Integrating photosensor and imaging system having wide dynamic range
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
US5260592A (en) * 1991-02-19 1993-11-09 Synaptics, Incorporated Integrating photosensor and imaging system having wide dynamic range with varactors
EP0629001B1 (en) * 1993-06-10 1998-07-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated monolithic structure of a vertical bipolar transistor and a vertical MOSFET transistor
JP4197660B2 (ja) * 2004-04-30 2008-12-17 ローム株式会社 Ｍｏｓトランジスタおよびこれを備えた半導体集積回路装置
US8874188B2 (en) * 2008-12-17 2014-10-28 Koninklijke Philips N.V. Arrangement and method for influencing and/or detecting magnetic particles

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
US3821780A (en) * 1972-10-24 1974-06-28 Gen Motors Corp Double mesa transistor with integral bleeder resistors
US3813588A (en) * 1973-07-09 1974-05-28 Motorola Inc Efficient power darlington device configuration
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS53142184A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Darlington transistor
US4198693A (en) * 1978-03-20 1980-04-15 Texas Instruments Incorporated VMOS Read only memory
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US4206469A (en) * 1978-09-15 1980-06-03 Westinghouse Electric Corp. Power metal-oxide-semiconductor-field-effect-transistor
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
US4366522A (en) * 1979-12-10 1982-12-28 Reliance Electric Company Self-snubbing bipolar/field effect (biofet) switching circuits and method
JPS5765269A (en) * 1980-10-06 1982-04-20 Shindengen Electric Mfg Co Ltd Single transistor type converter
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
JPS5892263A (ja) * 1981-11-28 1983-06-01 Fuji Electric Co Ltd ダ−リントントランジスタ
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
JPS58165374A (ja) * 1982-03-26 1983-09-30 Hitachi Ltd 複合トランジスタ
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region

Also Published As

Publication number Publication date
US4783694A (en) 1988-11-08
IT8547677A1 (it) 1986-08-13
IT1182194B (it) 1987-09-30
WO1985004285A1 (en) 1985-09-26
EP0174318A1 (en) 1986-03-19

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