IT1280673B1 - Modulo di dispositivi a semiconduttori di alta potenza con bassa resistenza termica e metodo di fabbricazione semplificato - Google Patents

Modulo di dispositivi a semiconduttori di alta potenza con bassa resistenza termica e metodo di fabbricazione semplificato

Info

Publication number
IT1280673B1
IT1280673B1 ITMI941840A IT1280673B1 IT 1280673 B1 IT1280673 B1 IT 1280673B1 IT MI941840 A ITMI941840 A IT MI941840A IT 1280673 B1 IT1280673 B1 IT 1280673B1
Authority
IT
Italy
Prior art keywords
terminal board
ims
board
bosses
high power
Prior art date
Application number
Other languages
English (en)
Inventor
Furnival Courtney
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22400324&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1280673(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI941840A0 publication Critical patent/ITMI941840A0/it
Publication of ITMI941840A1 publication Critical patent/ITMI941840A1/it
Application granted granted Critical
Publication of IT1280673B1 publication Critical patent/IT1280673B1/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861Lead-frames fixed on or encapsulated in insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Multi-Conductor Connections (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
ITMI941840 1993-09-15 1994-09-08 Modulo di dispositivi a semiconduttori di alta potenza con bassa resistenza termica e metodo di fabbricazione semplificato IT1280673B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/122,052 US5408128A (en) 1993-09-15 1993-09-15 High power semiconductor device module with low thermal resistance and simplified manufacturing

Publications (3)

Publication Number Publication Date
ITMI941840A0 ITMI941840A0 (it) 1994-09-08
ITMI941840A1 ITMI941840A1 (it) 1996-03-08
IT1280673B1 true IT1280673B1 (it) 1998-01-26

Family

ID=22400324

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI941840 IT1280673B1 (it) 1993-09-15 1994-09-08 Modulo di dispositivi a semiconduttori di alta potenza con bassa resistenza termica e metodo di fabbricazione semplificato

Country Status (6)

Country Link
US (1) US5408128A (it)
JP (1) JP2801534B2 (it)
DE (1) DE4430047C2 (it)
FR (1) FR2710190B1 (it)
GB (1) GB2282007B (it)
IT (1) IT1280673B1 (it)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002183A (en) * 1995-05-04 1999-12-14 Iversen; Arthur H. Power semiconductor packaging
JP2979923B2 (ja) * 1993-10-13 1999-11-22 富士電機株式会社 半導体装置
JP3051011B2 (ja) * 1993-11-18 2000-06-12 株式会社東芝 パワ−モジュ−ル
US5539254A (en) * 1994-03-09 1996-07-23 Delco Electronics Corp. Substrate subassembly for a transistor switch module
JP3316714B2 (ja) * 1994-05-31 2002-08-19 三菱電機株式会社 半導体装置
DE4421319A1 (de) * 1994-06-17 1995-12-21 Abb Management Ag Niederinduktives Leistungshalbleitermodul
US5902959A (en) * 1996-09-05 1999-05-11 International Rectifier Corporation Lead frame with waffled front and rear surfaces
DE19646396C2 (de) * 1996-11-11 2001-06-28 Semikron Elektronik Gmbh Leistungshalbleitermodul für verschiedene Schaltungsvarianten
US6828600B2 (en) * 1997-05-09 2004-12-07 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh Power semiconductor module with ceramic substrate
DE19719703C5 (de) * 1997-05-09 2005-11-17 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleitermodul mit Keramiksubstrat
DE19722355A1 (de) * 1997-05-28 1998-12-03 Bosch Gmbh Robert Verfahren zur Herstellung elektrischer Baugruppen und elektrische Baugruppe
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
US6078501A (en) * 1997-12-22 2000-06-20 Omnirel Llc Power semiconductor module
US5895974A (en) * 1998-04-06 1999-04-20 Delco Electronics Corp. Durable substrate subassembly for transistor switch module
US6127727A (en) * 1998-04-06 2000-10-03 Delco Electronics Corp. Semiconductor substrate subassembly with alignment and stress relief features
US6166464A (en) * 1998-08-24 2000-12-26 International Rectifier Corp. Power module
US6302192B1 (en) * 1999-05-12 2001-10-16 Thermal Corp. Integrated circuit heat pipe heat spreader with through mounting holes
US6896039B2 (en) * 1999-05-12 2005-05-24 Thermal Corp. Integrated circuit heat pipe heat spreader with through mounting holes
US6362964B1 (en) * 1999-11-17 2002-03-26 International Rectifier Corp. Flexible power assembly
DE10024377B4 (de) * 2000-05-17 2006-08-17 Infineon Technologies Ag Gehäuseeinrichtung und darin zu verwendendes Kontaktelement
JP2002026251A (ja) * 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
US20020185726A1 (en) * 2001-06-06 2002-12-12 North Mark T. Heat pipe thermal management of high potential electronic chip packages
US6729908B2 (en) * 2001-07-31 2004-05-04 Delphi Technologies, Inc. Battery pack having perforated terminal arrangement
US6534857B1 (en) * 2001-11-02 2003-03-18 Northrop Grumman Corporation Thermally balanced power transistor
DE10214448A1 (de) * 2002-03-30 2003-10-16 Hella Kg Hueck & Co Trennschalter
US6880626B2 (en) * 2002-08-28 2005-04-19 Thermal Corp. Vapor chamber with sintered grooved wick
CA2505069A1 (en) * 2002-11-08 2004-05-27 Vertelink Corporation Transpedicular intervertebral disk access methods and devices
US6889755B2 (en) * 2003-02-18 2005-05-10 Thermal Corp. Heat pipe having a wick structure containing phase change materials
US6945317B2 (en) * 2003-04-24 2005-09-20 Thermal Corp. Sintered grooved wick with particle web
EP1639628A4 (en) * 2003-06-26 2007-12-26 Thermal Corp HEAT TRANSFER DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US6994152B2 (en) * 2003-06-26 2006-02-07 Thermal Corp. Brazed wick for a heat transfer device
US20050022976A1 (en) * 2003-06-26 2005-02-03 Rosenfeld John H. Heat transfer device and method of making same
US6938680B2 (en) * 2003-07-14 2005-09-06 Thermal Corp. Tower heat sink with sintered grooved wick
DE102005037191A1 (de) * 2005-08-06 2007-02-08 Vorwerk & Co. Interholding Gmbh Küchengefäß mit einem Heizboden
WO2007025489A1 (de) * 2005-08-26 2007-03-08 Siemens Aktiengesellschaft Leistungshalbleitermodul mit auf schaltungsträger aufgebrachten lastanschlusselementen
JP4825259B2 (ja) * 2008-11-28 2011-11-30 三菱電機株式会社 電力用半導体モジュール及びその製造方法
JP5283277B2 (ja) * 2009-09-04 2013-09-04 日本インター株式会社 パワー半導体モジュール
CN102013578B (zh) * 2009-09-07 2014-05-28 比亚迪股份有限公司 导体引出结构以及功率模块
US20110134607A1 (en) * 2009-12-07 2011-06-09 Schnetker Ted R Solid state switch arrangement
JP5672370B2 (ja) * 2011-03-16 2015-02-18 富士電機株式会社 半導体モジュールおよびその製造方法
EP2833404A4 (en) 2012-03-28 2016-01-20 Fuji Electric Co Ltd SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
WO2013145620A1 (ja) 2012-03-28 2013-10-03 富士電機株式会社 半導体装置
JP5954410B2 (ja) 2012-03-28 2016-07-20 富士電機株式会社 半導体装置
JP6071662B2 (ja) * 2013-03-11 2017-02-01 京セラ株式会社 パワー半導体モジュール
JP6171586B2 (ja) 2013-06-04 2017-08-02 富士電機株式会社 半導体装置
USD754084S1 (en) * 2013-08-21 2016-04-19 Mitsubishi Electric Corporation Semiconductor device
US9871126B2 (en) * 2014-06-16 2018-01-16 Infineon Technologies Ag Discrete semiconductor transistor
USD762597S1 (en) 2014-08-07 2016-08-02 Infineon Technologies Ag Power semiconductor module
CN107078130B (zh) * 2014-09-30 2019-07-23 株式会社三社电机制作所 半导体模块
JP1529977S (it) * 2014-11-04 2015-07-27
USD748595S1 (en) * 2015-02-03 2016-02-02 Infineon Technologies Ag Power semiconductor module
USD755742S1 (en) * 2015-02-18 2016-05-10 Semiconductor Components Industries, Llc Power device package
USD755741S1 (en) * 2015-02-18 2016-05-10 Semiconductor Components Industries, Llc Power device package
USD759604S1 (en) * 2015-06-17 2016-06-21 Mitsubishi Electric Corporation Semiconductor device
JP2017183621A (ja) * 2016-03-31 2017-10-05 富士通株式会社 電子機器
CN105789160B (zh) * 2016-05-03 2017-05-24 扬州国扬电子有限公司 一种组合式电极及其三电平大功率模块
JP1578687S (it) * 2016-11-08 2017-06-12
WO2019012677A1 (ja) * 2017-07-14 2019-01-17 新電元工業株式会社 電子モジュール
US11183440B2 (en) 2018-12-10 2021-11-23 Gan Systems Inc. Power modules for ultra-fast wide-bandgap power switching devices
USD916039S1 (en) * 2020-03-20 2021-04-13 Sansha Electric Manufacturing Co., Ltd. Semiconductor device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728313A1 (de) * 1977-06-23 1979-01-04 Siemens Ag Halbleiterbauelement
FR2503526A1 (fr) * 1981-04-03 1982-10-08 Silicium Semiconducteur Ssc Boitier et procede de montage et d'interconnexion de composants semiconducteurs de moyenne puissance en boitier unique.
FR2503932A1 (fr) * 1981-04-08 1982-10-15 Thomson Csf Boitiers a cosses plates pour composants semi-conducteurs de moyenne puissance et procede de fabrication
JPS5968958A (ja) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ組立体
JPS5972758A (ja) * 1982-10-19 1984-04-24 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタモジユ−ル
BR8400122A (pt) * 1983-01-12 1984-08-21 Allen Bradley Co Modulo semicondutor e embalagem de semicondutor aperfeicoada
JPS60103649A (ja) * 1983-11-11 1985-06-07 Hitachi Ltd 半導体装置
JPS63250164A (ja) * 1987-04-07 1988-10-18 Denki Kagaku Kogyo Kk ハイパワ−用混成集積回路基板とその集積回路
DE3717489A1 (de) * 1987-05-23 1988-12-01 Asea Brown Boveri Leistungshalbleitermodul und verfahren zur herstellung des moduls
JPH0648874Y2 (ja) * 1988-10-26 1994-12-12 富士電機株式会社 半導体装置
JPH02222565A (ja) * 1989-02-23 1990-09-05 Mitsubishi Electric Corp 半導体装置
DE3931634A1 (de) * 1989-09-22 1991-04-04 Telefunken Electronic Gmbh Halbleiterbauelement
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5105259A (en) * 1990-09-28 1992-04-14 Motorola, Inc. Thermally enhanced semiconductor device utilizing a vacuum to ultimately enhance thermal dissipation
US5194933A (en) * 1990-10-05 1993-03-16 Fuji Electric Co., Ltd. Semiconductor device using insulation coated metal substrate
JPH04354156A (ja) * 1991-05-31 1992-12-08 Fuji Electric Co Ltd 半導体スイッチング装置
JPH0515450U (ja) * 1991-08-06 1993-02-26 株式会社三社電機製作所 電力用半導体モジユール
JP2656416B2 (ja) * 1991-12-16 1997-09-24 三菱電機株式会社 半導体装置および半導体装置の製造方法、並びに半導体装置に用いられる複合基板および複合基板の製造方法

Also Published As

Publication number Publication date
GB9417776D0 (en) 1994-10-26
FR2710190B1 (fr) 1997-04-11
GB2282007A (en) 1995-03-22
ITMI941840A1 (it) 1996-03-08
FR2710190A1 (fr) 1995-03-24
ITMI941840A0 (it) 1994-09-08
DE4430047A1 (de) 1995-03-23
GB2282007B (en) 1997-05-28
JP2801534B2 (ja) 1998-09-21
DE4430047C2 (de) 1997-05-22
JPH07240497A (ja) 1995-09-12
US5408128A (en) 1995-04-18

Similar Documents

Publication Publication Date Title
IT1280673B1 (it) Modulo di dispositivi a semiconduttori di alta potenza con bassa resistenza termica e metodo di fabbricazione semplificato
US6087682A (en) High power semiconductor module device
US6473304B1 (en) Thermally conductive case for electrical components and method of manufacture therefor
KR970067801A (ko) 반도체 장치 및 그 제조방법
KR930006816A (ko) 반도체 장치 및 그 제조방법
JP2000068446A (ja) パワー半導体モジュール
CN1763933B (zh) 印刷电路板与结合其的电路单元
RU2322729C1 (ru) Корпус полупроводникового прибора с высокой нагрузкой по току (варианты)
JPS62202548A (ja) 半導体装置
JP2001053220A (ja) 半導体装置
KR960005966A (ko) 반도체 장치와 그의 제조 및 실장방법
US20050161778A1 (en) Power module and power module assembly
KR100430325B1 (ko) 폴리머스터드그리드어레이
CN1316606C (zh) 半导体器件
US7657998B2 (en) Method of making a resin-packaged protection circuit module for rechargeable batteries
JP3258428B2 (ja) 複合半導体装置の製造方法
JP2006013273A (ja) 半導体装置
JP3107385U (ja) チップの封入構造
JPH1050897A (ja) 半導体装置
JPH06188335A (ja) 樹脂封止形半導体装置
JPH0650358U (ja) 複合半導体装置
US7087990B2 (en) Power semiconductor device
JP2782640B2 (ja) 半導体装置の内部接続構造
KR200394553Y1 (ko) 크기가 축소된 칩의 패키지 구조
JP2767517B2 (ja) 電力用半導体モジュール

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970925