CN102013578B - 导体引出结构以及功率模块 - Google Patents
导体引出结构以及功率模块 Download PDFInfo
- Publication number
- CN102013578B CN102013578B CN200910171850.7A CN200910171850A CN102013578B CN 102013578 B CN102013578 B CN 102013578B CN 200910171850 A CN200910171850 A CN 200910171850A CN 102013578 B CN102013578 B CN 102013578B
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- conductor
- leg
- buffer part
- plate end
- extraction structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Non-Insulated Conductors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910171850.7A CN102013578B (zh) | 2009-09-07 | 2009-09-07 | 导体引出结构以及功率模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910171850.7A CN102013578B (zh) | 2009-09-07 | 2009-09-07 | 导体引出结构以及功率模块 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102013578A CN102013578A (zh) | 2011-04-13 |
CN102013578B true CN102013578B (zh) | 2014-05-28 |
Family
ID=43843654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910171850.7A Active CN102013578B (zh) | 2009-09-07 | 2009-09-07 | 导体引出结构以及功率模块 |
Country Status (1)
Country | Link |
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CN (1) | CN102013578B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102891122A (zh) * | 2012-10-16 | 2013-01-23 | 西安永电电气有限责任公司 | 电力半导体器件用电极 |
CN103050459B (zh) * | 2013-01-28 | 2016-05-18 | 江苏宏微科技股份有限公司 | 功率模块信号端子及其连接结构 |
CN105225836A (zh) * | 2015-10-09 | 2016-01-06 | 铜陵昌满塑胶有限公司 | 可快速注胶的环保型电容器外壳 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3610288A1 (de) * | 1986-03-26 | 1987-10-01 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
DE3837920A1 (de) * | 1988-11-09 | 1990-05-10 | Semikron Elektronik Gmbh | Halbleiterelement |
US4970576A (en) * | 1987-05-23 | 1990-11-13 | Asea Brown Boveri Aktiengesellschaft | Power semiconductor module and method for producing the module |
US5408128A (en) * | 1993-09-15 | 1995-04-18 | International Rectifier Corporation | High power semiconductor device module with low thermal resistance and simplified manufacturing |
-
2009
- 2009-09-07 CN CN200910171850.7A patent/CN102013578B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3610288A1 (de) * | 1986-03-26 | 1987-10-01 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
US4970576A (en) * | 1987-05-23 | 1990-11-13 | Asea Brown Boveri Aktiengesellschaft | Power semiconductor module and method for producing the module |
DE3837920A1 (de) * | 1988-11-09 | 1990-05-10 | Semikron Elektronik Gmbh | Halbleiterelement |
US5408128A (en) * | 1993-09-15 | 1995-04-18 | International Rectifier Corporation | High power semiconductor device module with low thermal resistance and simplified manufacturing |
Also Published As
Publication number | Publication date |
---|---|
CN102013578A (zh) | 2011-04-13 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191129 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: Shenzhen BYD Microelectronics Co., Ltd. Address before: Longgang District of Shenzhen City, Guangdong province 518118 Ping Wang Ping Road No. 3001 Patentee before: Biyadi Co., Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |