KR930006816A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

Info

Publication number
KR930006816A
KR930006816A KR1019920017298A KR920017298A KR930006816A KR 930006816 A KR930006816 A KR 930006816A KR 1019920017298 A KR1019920017298 A KR 1019920017298A KR 920017298 A KR920017298 A KR 920017298A KR 930006816 A KR930006816 A KR 930006816A
Authority
KR
South Korea
Prior art keywords
circuit board
semiconductor device
electrically connected
mold
electrical connection
Prior art date
Application number
KR1019920017298A
Other languages
English (en)
Other versions
KR960000711B1 (ko
Inventor
고우지 아라키
신지로 고지마
와타루 다카하시
Original Assignee
사토 후미오
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사토 후미오, 가부시키가이샤 도시바 filed Critical 사토 후미오
Publication of KR930006816A publication Critical patent/KR930006816A/ko
Application granted granted Critical
Publication of KR960000711B1 publication Critical patent/KR960000711B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/023—Stackable modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/1627—Disposition stacked type assemblies, e.g. stacked multi-cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

본 발명은, 회로기판상의 반도체 소자가 집적회로 소자와 파위 소자가 혼재된 것이어도 고밀도로 실장할 수 있도록 된 구조의 반도체 장치에 관한 것이다.
본 발명은, 복수의 회로기판(4)을 이용하여 각각 그 외주를 에워싸는 틀(8)을 부착시키고, 각 틀(8)에는 각 회로기판(4)에 전기적으로 접속된 접속단자(71, 72)가 부착되어 있기 때문에 제1를(81)과 제2를(82)을 겹쳐 쌓아 각각의 접속단자를 접속시키면 회로기판은 상호 전기적으로 접속하여 고밀도 실장된 반도체 장치가 형성된다.

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 반도체 장치의 단면도,
제2도는 본 발명의 제1실시예에 따른 반도체 장치의 부분 단면도,
제3도는 본 발명의 제1실시예에 따른 반도체 장치의 제조공정 단면도,
제4도는 본 발명의 제1실시예에 따른 반도체 장치의 제조공정 단면도.

Claims (10)

  1. 제1틀(81)이 그 주위에 부착된 제1회로기판(4)과, 이 제1회로기판(4)에 적충되면서 제2틀(82)이 그 주위에 부차된 제2회로기판(4), 상기 제1및 제2회로기판(4)에 각각 탑재된반도체 소자(5, 9), 상기 제1를(81)에 형성되면서 상기 제1회기판(4)과 전기적으로 접속된 제1전기적 접속수단(72)및, 상기 제2를(82)에 형성되면서 상기 제2회로기판(4)과 전기적으로 접속된 제2전기적 접속수단(71)을 구비하고, 상기 제1전기적 접속 수단(72)고 상기 제2전기적 접속수단(71)을 전기적으로 접속함으로써 상기 제1및 제2회로기판(4)을 상호 전기적으로 접속되도록 된 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 제1전기적 접속수단(72)은 상기 제1를(81)로 부터 돌출된 제1접속단자로 이루어지고, 상기 제2전기적 접속수단(71)은 상기 제2를(82)에 형성된 흠속에 배치된 제2접속단자로 이루어지며, 상기 제1접속단자가 상기 흠속의 제2접속단자와 접촉되어 제1및 제2회로기판(4, 4)이 전기적으로 접속되도록 된 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 제1전기적 접속수단(72)은 상기 제1를 (81)로부터 돌출된 제1접속단자와 상기 제1를(81)의 표면상에 상기 제1접속단자를 에워싸도록 형성된 도전층으로 이루어지고, 상기 제2전기적 접속수단(71)은 상기 제2를(82)의 표면상에 형성되면서 접촉구멍을 갖춘 제2접속단자로 이루어지며, 상기 제1접속단자는 이 접촉구멍을 통해 상기 제2를(82)에 형성된 흠에 삽입됨으로써 상기 도전층 및 제1접속단자에 접촉 되도록 된 것을 특징으로 하는 반도체 장치.
  4. 제1항에 있어서, 상기 제1회로기판(4)에는 상기 반도체 소자로서 파워 소자가 탑재되어 있거나 또는 집적회로 소자와 파워 소자가 혼재되어 있고, 상기 제2회로기판(4)에는 상기 반도체 소자로서 집적회로소자가 탑재되어 있거나 또는 집적회로소자와 파워소자가 혼재되어 있는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 상기 파워 소자를 탑재한 상기 제1및 제2호르가판(4)의 어느 한쪽 또는 양쪽의 반도체 소자가 탑재되어 있는 면과는 반대의 면에 방열장치(3)를 부착시킨 것을 특징으로 하는 반도체.
  6. 제5항에 있어서, 상기 방열장치(3)는 그 회로기판에 부착되어 있는 틀의 임의의 변의 내측벽 및 그 다른 변의 저면에 접합되어 있는 것을 특징으로 하는 반도체 장치.
  7. 제1항에 있어서, 상기 제2회로기판(4)에는 외주에 제3를(83)이 부착된 제3회로기판(4)이 적층되고, 이 제3를(83)에는 상기 제3회로기판(4)과 전기적으로 접속된 제3전기적 접속수단(72)이 설치되어 있으며, 상기 제2전기적 접속수단(71)과 상기 제3전기적 접속수단(72)을 전기적으로 접속함으로써 상기 제2및 제3회로기판(4, 4)을 상호 전기적으로 접속하도록 된 것을 특징으로 하는 반도체 장치.
  8. 제1항에 있어서, 상기 제1틀(81)에는 그 외주에 돌기부(86)를 형성하고, 상기 제2를(82)에는 그 외주에 절결부(87)를 형성하며, 상기 돌기부(86)및 절결부(87)를 끼워 맞추어서 상기 제2를(82)을 제1를(81)에 고정시키도록 된 것을 특징으로 하는 반도체 장치.
  9. 복수의 리드를 소정의 간격으로 금형내에 배치하는 공정과, 상기 금형에 절연을을 충전하여 경화시켜 상기 리드가 부착되는 틀을 형성하는 공정, 상기 리드를 가공하여 상기 틀에 전기적 접속수단을 부착시키는 공정, 상기 틀에 회로기판을 부착시키는 공정, 상기 회로기판에 집적회로소자 또는 그 양자로 이루어진 반도체 소자를 탑재하는 공정 및, 상기 회로기판과 상기 전기적 접속수단을 전기적으로 접속하는 공정을 구비하여 이루어진 것을 특징으로 하는 반도체 장치.
  10. 제9항에 있어서, 상기 리드를 가공하여 상기 틀내에 전기적 접속수단을 부착시키는 공정에 있어서, 상기 리드를 가공할 때에 외부리드도 형성하도록 된 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920017298A 1991-09-26 1992-09-23 반도체장치 및 그 제조방법 KR960000711B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-274764 1991-09-26
JP3274764A JP2642548B2 (ja) 1991-09-26 1991-09-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR930006816A true KR930006816A (ko) 1993-04-21
KR960000711B1 KR960000711B1 (ko) 1996-01-11

Family

ID=17546253

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920017298A KR960000711B1 (ko) 1991-09-26 1992-09-23 반도체장치 및 그 제조방법

Country Status (3)

Country Link
US (1) US5295044A (ko)
JP (1) JP2642548B2 (ko)
KR (1) KR960000711B1 (ko)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268102A (ja) * 1993-01-13 1994-09-22 Fuji Electric Co Ltd 樹脂封止形半導体装置
US5483024A (en) * 1993-10-08 1996-01-09 Texas Instruments Incorporated High density semiconductor package
US5686769A (en) * 1995-05-26 1997-11-11 Eastman Kodak Company Method of coil mounting for maximum heat transfer in brushless DC motors
US5612513A (en) * 1995-09-19 1997-03-18 Micron Communications, Inc. Article and method of manufacturing an enclosed electrical circuit using an encapsulant
JP2987101B2 (ja) * 1996-04-15 1999-12-06 株式会社ニッシン 半導体装置の接続方法並びに半導体装置の接続器
SE511425C2 (sv) * 1996-12-19 1999-09-27 Ericsson Telefon Ab L M Packningsanordning för integrerade kretsar
US6297548B1 (en) * 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
US6057612A (en) * 1998-07-02 2000-05-02 Intersil Corporation Flat power pack
US6265771B1 (en) * 1999-01-27 2001-07-24 International Business Machines Corporation Dual chip with heat sink
EP1970962B1 (en) * 2001-05-09 2015-01-21 Shindengen Electric Manufacturing Company, Limited Semiconductor device
GB2379330A (en) * 2001-08-29 2003-03-05 Motorola Inc Package for electronic components and method for forming a package for electronic components
JP4262453B2 (ja) * 2002-07-15 2009-05-13 三菱電機株式会社 電力半導体装置
TW577153B (en) * 2002-12-31 2004-02-21 Advanced Semiconductor Eng Cavity-down MCM package
JP2004335710A (ja) * 2003-05-07 2004-11-25 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2005117009A (ja) * 2003-09-17 2005-04-28 Denso Corp 半導体装置およびその製造方法
US20060018098A1 (en) * 2004-07-22 2006-01-26 Adrian Hill PCB board incorporating thermo-encapsulant for providing controlled heat dissipation and electromagnetic functions and associated method of manufacturing a PCB board
US7885076B2 (en) * 2004-09-07 2011-02-08 Flextronics Ap, Llc Apparatus for and method of cooling molded electronic circuits
US7907420B2 (en) * 2005-03-09 2011-03-15 Panasonic Corporation Bare chip mounted structure and mounting method
DE102005013762C5 (de) * 2005-03-22 2012-12-20 Sew-Eurodrive Gmbh & Co. Kg Elektronisches Gerät und Verfahren zur Bestimmung der Temperatur eines Leistungshalbleiters
US7675151B1 (en) * 2005-06-01 2010-03-09 Rockwell Collins, Inc. Silicon-based packaging for electronic devices
US7209360B1 (en) * 2005-10-28 2007-04-24 Lear Corporation Leak-tight system for boxes containing electrical and electronic components
US7989981B2 (en) * 2006-02-02 2011-08-02 Flextronics Ap, Llc Power adaptor and storage unit for portable devices
JP5420910B2 (ja) * 2006-02-14 2014-02-19 フレクストロニクス エーピー，リミテッド ライアビリティ カンパニー 電力変換装置
JPWO2007125633A1 (ja) * 2006-04-28 2009-09-10 株式会社東芝 高周波用半導体装置
CN101636702B (zh) * 2006-09-25 2014-03-05 弗莱克斯电子有限责任公司 双向调节器
JP4879276B2 (ja) * 2006-10-24 2012-02-22 パナソニック株式会社 ３次元電子回路装置
KR100988511B1 (ko) * 2006-11-29 2010-10-20 유니마이크론 테크놀로지 코퍼레이션 반도체 소자가 매립된 지지 기판 적층 구조체 및 그제조방법
JP2008172172A (ja) * 2007-01-15 2008-07-24 Denso Corp 電子制御装置及びその製造方法
JP5285224B2 (ja) * 2007-01-31 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
WO2008121394A1 (en) * 2007-03-29 2008-10-09 Flextronics Ap, Llc Method of producing a multi-turn coil from folded flexible circuitry
US7830676B2 (en) * 2007-03-29 2010-11-09 Flextronics Ap, Llc Primary only constant voltage/constant current (CVCC) control in quasi resonant convertor
US7760519B2 (en) * 2007-03-29 2010-07-20 Flextronics Ap, Llc Primary only control quasi resonant convertor
US7755914B2 (en) * 2007-03-29 2010-07-13 Flextronics Ap, Llc Pulse frequency to voltage conversion
US7978489B1 (en) 2007-08-03 2011-07-12 Flextronics Ap, Llc Integrated power converters
JP4470980B2 (ja) * 2007-09-10 2010-06-02 株式会社デンソー 電子装置
CN104377019A (zh) * 2007-09-25 2015-02-25 弗莱克斯电子有限责任公司 热增强的磁变压器
US7773381B2 (en) 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
US8279646B1 (en) 2007-12-14 2012-10-02 Flextronics Ap, Llc Coordinated power sequencing to limit inrush currents and ensure optimum filtering
SG142321A1 (en) * 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer
US8102678B2 (en) * 2008-05-21 2012-01-24 Flextronics Ap, Llc High power factor isolated buck-type power factor correction converter
US8693213B2 (en) * 2008-05-21 2014-04-08 Flextronics Ap, Llc Resonant power factor correction converter
US8031042B2 (en) * 2008-05-28 2011-10-04 Flextronics Ap, Llc Power converter magnetic devices
US8081019B2 (en) * 2008-11-21 2011-12-20 Flextronics Ap, Llc Variable PFC and grid-tied bus voltage control
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
US8040117B2 (en) * 2009-05-15 2011-10-18 Flextronics Ap, Llc Closed loop negative feedback system with low frequency modulated gain
FR2951019B1 (fr) * 2009-10-07 2012-06-08 Valeo Etudes Electroniques Module de puissance pour vehicule automobile
DE102009048838B3 (de) * 2009-10-09 2011-01-20 Eads Deutschland Gmbh Hermetisches dichtes Hochfrequenz-Frontend
US8289741B2 (en) * 2010-01-14 2012-10-16 Flextronics Ap, Llc Line switcher for power converters
US8586873B2 (en) * 2010-02-23 2013-11-19 Flextronics Ap, Llc Test point design for a high speed bus
US8964413B2 (en) 2010-04-22 2015-02-24 Flextronics Ap, Llc Two stage resonant converter enabling soft-switching in an isolated stage
JP5115632B2 (ja) 2010-06-30 2013-01-09 株式会社デンソー 半導体装置
US8488340B2 (en) 2010-08-27 2013-07-16 Flextronics Ap, Llc Power converter with boost-buck-buck configuration utilizing an intermediate power regulating circuit
US8547699B1 (en) * 2010-11-09 2013-10-01 Adtran, Inc. Enclosure for outside plant equipment with interconnect for mating printed circuit boards, printed circuit board device and method of repairing outside plant equipment
WO2012098799A1 (ja) * 2011-01-20 2012-07-26 京セラ株式会社 半導体素子収納用パッケージ、およびこれを備えた半導体装置
CN103688126A (zh) 2011-07-12 2014-03-26 弗莱克斯电子有限责任公司 具有整合蒸发器和冷凝器的热量传递系统
US9117991B1 (en) 2012-02-10 2015-08-25 Flextronics Ap, Llc Use of flexible circuits incorporating a heat spreading layer and the rigidizing specific areas within such a construction by creating stiffening structures within said circuits by either folding, bending, forming or combinations thereof
US9232630B1 (en) 2012-05-18 2016-01-05 Flextronics Ap, Llc Method of making an inlay PCB with embedded coin
US9366394B2 (en) 2012-06-27 2016-06-14 Flextronics Ap, Llc Automotive LED headlight cooling system
US9092712B2 (en) 2012-11-02 2015-07-28 Flextronics Ap, Llc Embedded high frequency RFID
WO2014088974A1 (en) 2012-12-03 2014-06-12 Flextronics Ap, Llc Driving board folding machine
DE102014102917B4 (de) 2013-03-05 2024-01-18 Flextronics Ap, Llc Bauteil mit Abzugsstrecken, Halbleiterbaugruppe mit Druckentlastungsstruktur und Verfahren zur Verhinderung von Druckaufbau in einer Halbleiterverpackung
US9521754B1 (en) 2013-08-19 2016-12-13 Multek Technologies Limited Embedded components in a substrate
US9053405B1 (en) 2013-08-27 2015-06-09 Flextronics Ap, Llc Printed RFID circuit
US9801277B1 (en) 2013-08-27 2017-10-24 Flextronics Ap, Llc Bellows interconnect
JP6117661B2 (ja) 2013-09-19 2017-04-19 日立オートモティブシステムズ株式会社 電子制御装置
US9565748B2 (en) 2013-10-28 2017-02-07 Flextronics Ap, Llc Nano-copper solder for filling thermal vias
US9338915B1 (en) 2013-12-09 2016-05-10 Flextronics Ap, Llc Method of attaching electronic module on fabrics by stitching plated through holes
US9549463B1 (en) 2014-05-16 2017-01-17 Multek Technologies, Ltd. Rigid to flexible PC transition
US9723713B1 (en) 2014-05-16 2017-08-01 Multek Technologies, Ltd. Flexible printed circuit board hinge
US9661738B1 (en) 2014-09-03 2017-05-23 Flextronics Ap, Llc Embedded coins for HDI or SEQ laminations
US10123603B1 (en) 2015-03-27 2018-11-13 Multek Technologies Limited Diffuse fiber optic lighting for luggage
US10154583B1 (en) 2015-03-27 2018-12-11 Flex Ltd Mechanical strain reduction on flexible and rigid-flexible circuits
US10321560B2 (en) 2015-11-12 2019-06-11 Multek Technologies Limited Dummy core plus plating resist restrict resin process and structure
US10064292B2 (en) 2016-03-21 2018-08-28 Multek Technologies Limited Recessed cavity in printed circuit board protected by LPI
US10712398B1 (en) 2016-06-21 2020-07-14 Multek Technologies Limited Measuring complex PCB-based interconnects in a production environment
EP3476040B1 (en) * 2016-06-28 2022-04-13 LG Electronics Inc. Solar cell module and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356532A (en) * 1980-07-18 1982-10-26 Thomas & Betts Corporation Electronic package and accessory component assembly
DE8808743U1 (de) * 1988-07-07 1988-09-01 Siemens AG, 1000 Berlin und 8000 München Elektronik-Baugruppe
EP0353443B1 (de) * 1988-08-03 1993-01-27 Mannesmann Kienzle GmbH (HR B1220) Gehäuse für ein elektronisches Gerät
US4956746A (en) * 1989-03-29 1990-09-11 Hughes Aircraft Company Stacked wafer electronic package
JPH03190190A (ja) * 1989-12-19 1991-08-20 Toshiba Corp 混成集積回路装置
US5101322A (en) * 1990-03-07 1992-03-31 Motorola, Inc. Arrangement for electronic circuit module
US5172303A (en) * 1990-11-23 1992-12-15 Motorola, Inc. Electronic component assembly
KR920018913A (ko) * 1991-03-30 1992-10-22 김광호 반도체 장치 및 그의 제조 방법

Also Published As

Publication number Publication date
KR960000711B1 (ko) 1996-01-11
US5295044A (en) 1994-03-15
JP2642548B2 (ja) 1997-08-20
JPH0590482A (ja) 1993-04-09

Similar Documents

Publication Publication Date Title
KR930006816A (ko) 반도체 장치 및 그 제조방법
US5461542A (en) Multi-board electrical control device
CA1115820A (en) Electrical connector for use in mounting an electronic device on a substrate
KR970067801A (ko) 반도체 장치 및 그 제조방법
KR940022811A (ko) 세라믹제 어댑터 세라믹 패키지
US3936866A (en) Heat conductive mounting and connection of semiconductor chips in micro-circuitry on a substrate
KR930021040A (ko) 전자회로장치 및 그 제조방법
JPS62104056A (ja) 半導体部品の実装構造
JPS59188948A (ja) チツプキヤリア
JP2006013273A (ja) 半導体装置
JP2612455B2 (ja) 半導体素子搭載用基板
US6215663B1 (en) Printed circuit board assembly with improved thermal performance
JPS62134945A (ja) モ−ルドトランジスタ
US5260602A (en) Hybrid integrated-circuit device having an asymmetrical thermal dissipator
KR970053697A (ko) 반도체 장치 및 그의 제조방법
KR950028068A (ko) 적층형 반도체 패키지 및 그 제조방법
JPS598364Y2 (ja) 電子機器用絶縁ケ−ス
JPH0648876Y2 (ja) 半導体装置
JPS5769768A (en) Equipping structure of electronic circuit unit containing high electric power parts
KR930008239Y1 (ko) 회로부품 방열장치
JPH0246058Y2 (ko)
JP2881264B2 (ja) 搭載用凹部を有する電子部品搭載用基板
JPH0613535A (ja) 電子部品搭載装置
JPS58131638U (ja) 混成集積回路装置
JPH01246857A (ja) 半導体装置

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20021231

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee