IT1272460B - Dispositivo di memoria dinamica ad accesso casuale adatto per abbreviare il tempo richiesto per testare la richiesta di auto-rinfresco - Google Patents
Dispositivo di memoria dinamica ad accesso casuale adatto per abbreviare il tempo richiesto per testare la richiesta di auto-rinfrescoInfo
- Publication number
- IT1272460B IT1272460B ITMI931088A ITMI931088A IT1272460B IT 1272460 B IT1272460 B IT 1272460B IT MI931088 A ITMI931088 A IT MI931088A IT MI931088 A ITMI931088 A IT MI931088A IT 1272460 B IT1272460 B IT 1272460B
- Authority
- IT
- Italy
- Prior art keywords
- test
- self
- refreshment
- refreshing
- random access
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Viene rivelata una memoria dinamica ad accesso casuale (DRAM) avente un circuito di controllo migliorato del rinfresco (20). Un circuito di controllo di auto-rinfresco (15) include un circuito oscillante (13) per generare un segnale di orologio (?0) che definisce un ciclo di rinfresco in una modalità normale di auto-rinfresco e un circuito oscillante (16) per generare un segnale di orologio (?t) che definisce un ciclo di rinfresco in una modalità di prova. Quando una tensione elevata più alta di un livello di una tensione di alimentazione Vcc viene applicata ad un terminale di ingresso RAS (22), un circuito di rivelamento della modalità di prova (19) fornisce un segnale di alto livello (CTE), attivando così una porta di trasmissione (18). In una prova di verifica della funzione di auto-rinfresco, dato che un contatore di rinfresco può generare un indirizzo di rinfresco avente un ciclo di rinfresco più breve di quello nella modalità normale di auto-rinfresco, può essere abbreviato il tempo richiesto per eseguire la prova.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4144044A JP2856598B2 (ja) | 1992-06-04 | 1992-06-04 | ダイナミックランダムアクセスメモリ装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI931088A0 ITMI931088A0 (it) | 1993-05-26 |
ITMI931088A1 ITMI931088A1 (it) | 1994-11-26 |
IT1272460B true IT1272460B (it) | 1997-06-23 |
Family
ID=15353020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI931088A IT1272460B (it) | 1992-06-04 | 1993-05-26 | Dispositivo di memoria dinamica ad accesso casuale adatto per abbreviare il tempo richiesto per testare la richiesta di auto-rinfresco |
Country Status (5)
Country | Link |
---|---|
US (1) | US5349562A (it) |
JP (1) | JP2856598B2 (it) |
KR (1) | KR960008279B1 (it) |
DE (1) | DE4317887A1 (it) |
IT (1) | IT1272460B (it) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950010624B1 (ko) * | 1993-07-14 | 1995-09-20 | 삼성전자주식회사 | 반도체 메모리장치의 셀프리프레시 주기조절회로 |
JP2606669B2 (ja) * | 1994-09-22 | 1997-05-07 | 日本電気株式会社 | 半導体記憶装置 |
JPH08153400A (ja) * | 1994-11-29 | 1996-06-11 | Mitsubishi Electric Corp | Dram |
JPH08227579A (ja) * | 1995-02-22 | 1996-09-03 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH09161478A (ja) * | 1995-12-12 | 1997-06-20 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4014669B2 (ja) * | 1996-04-22 | 2007-11-28 | 株式会社ルネサステクノロジ | 同期型半導体記憶装置 |
US6392948B1 (en) * | 1996-08-29 | 2002-05-21 | Micron Technology, Inc. | Semiconductor device with self refresh test mode |
US5940851A (en) * | 1996-11-27 | 1999-08-17 | Monolithic Systems, Inc. | Method and apparatus for DRAM refresh using master, slave and self-refresh modes |
US6272588B1 (en) * | 1997-05-30 | 2001-08-07 | Motorola Inc. | Method and apparatus for verifying and characterizing data retention time in a DRAM using built-in test circuitry |
JPH1139862A (ja) * | 1997-07-16 | 1999-02-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
WO1999019879A1 (en) * | 1997-10-10 | 1999-04-22 | Rambus Incorporated | Dram core refresh with reduced spike current |
US6122214A (en) * | 1998-03-23 | 2000-09-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory |
US6049505A (en) | 1998-05-22 | 2000-04-11 | Micron Technology, Inc. | Method and apparatus for generating memory addresses for testing memory devices |
KR20000026987A (ko) * | 1998-10-22 | 2000-05-15 | 구자홍 | 절전모드 제어장치 및 방법 |
US6317852B1 (en) * | 1998-10-23 | 2001-11-13 | Vanguard International Semiconductor Corporation | Method to test auto-refresh and self refresh circuitry |
KR100381966B1 (ko) * | 1998-12-28 | 2004-03-22 | 주식회사 하이닉스반도체 | 반도체메모리장치및그구동방법 |
US6208577B1 (en) * | 1999-04-16 | 2001-03-27 | Micron Technology, Inc. | Circuit and method for refreshing data stored in a memory cell |
TW454289B (en) * | 2000-03-09 | 2001-09-11 | Taiwan Semiconductor Mfg | Programmable memory refresh architecture |
KR100712492B1 (ko) * | 2001-06-28 | 2007-05-02 | 삼성전자주식회사 | 반도체 메모리 장치의 셀프 리프레쉬 회로 및 그 방법 |
US6774734B2 (en) * | 2002-11-27 | 2004-08-10 | International Business Machines Corporation | Ring oscillator circuit for EDRAM/DRAM performance monitoring |
KR100576922B1 (ko) | 2004-04-19 | 2006-05-03 | 주식회사 하이닉스반도체 | 고전압 발생 회로 |
KR100607352B1 (ko) * | 2004-12-30 | 2006-07-31 | 주식회사 하이닉스반도체 | 리프레쉬 오실레이터 제어 회로 |
KR100670657B1 (ko) * | 2005-06-30 | 2007-01-17 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
US7746159B1 (en) * | 2006-06-06 | 2010-06-29 | Cypress Semiconductor Corporation | Polarity conversion circuit |
KR100878301B1 (ko) * | 2007-05-10 | 2009-01-13 | 주식회사 하이닉스반도체 | 다중 테스트 모드를 지원하는 테스트 회로 |
US7890286B2 (en) * | 2007-12-18 | 2011-02-15 | Hynix Semiconductor Inc. | Test circuit for performing multiple test modes |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6061992A (ja) * | 1983-09-14 | 1985-04-09 | Nec Corp | 擬似スタティックメモリ |
JPS62170094A (ja) * | 1986-01-21 | 1987-07-27 | Mitsubishi Electric Corp | 半導体記憶回路 |
JPS6432489A (en) * | 1987-07-27 | 1989-02-02 | Matsushita Electronics Corp | Memory device |
US4933907A (en) * | 1987-12-03 | 1990-06-12 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory device and operating method therefor |
US5243576A (en) * | 1990-08-30 | 1993-09-07 | Nec Corporation | Semiconductor memory device |
JPH05217366A (ja) * | 1992-02-04 | 1993-08-27 | Sharp Corp | ダイナミック型半導体メモリ |
-
1992
- 1992-06-04 JP JP4144044A patent/JP2856598B2/ja not_active Expired - Lifetime
-
1993
- 1993-04-09 US US08/045,572 patent/US5349562A/en not_active Expired - Fee Related
- 1993-05-26 IT ITMI931088A patent/IT1272460B/it active IP Right Grant
- 1993-05-28 DE DE4317887A patent/DE4317887A1/de not_active Ceased
- 1993-06-02 KR KR1019930009921A patent/KR960008279B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940001163A (ko) | 1994-01-10 |
US5349562A (en) | 1994-09-20 |
ITMI931088A1 (it) | 1994-11-26 |
JPH05342862A (ja) | 1993-12-24 |
JP2856598B2 (ja) | 1999-02-10 |
ITMI931088A0 (it) | 1993-05-26 |
DE4317887A1 (de) | 1993-12-09 |
KR960008279B1 (ko) | 1996-06-21 |
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Legal Events
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0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970527 |