IT1270220B - Disposizione a semiconduttori e procedimento di fabbricazione - Google Patents

Disposizione a semiconduttori e procedimento di fabbricazione

Info

Publication number
IT1270220B
IT1270220B ITMI941237A ITMI941237A IT1270220B IT 1270220 B IT1270220 B IT 1270220B IT MI941237 A ITMI941237 A IT MI941237A IT MI941237 A ITMI941237 A IT MI941237A IT 1270220 B IT1270220 B IT 1270220B
Authority
IT
Italy
Prior art keywords
layer
chip
manufacturing procedure
semiconductor arrangement
junction
Prior art date
Application number
ITMI941237A
Other languages
English (en)
Inventor
Vesna Biallas
Herbert Goebel
Anton Mindl
Richard Spitz
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI941237A0 publication Critical patent/ITMI941237A0/it
Publication of ITMI941237A1 publication Critical patent/ITMI941237A1/it
Application granted granted Critical
Publication of IT1270220B publication Critical patent/IT1270220B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66098—Breakdown diodes
    • H01L29/66106—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

Vengono proposte disposizioni a semiconduttori, specialmente diodi, che presentano uno strato p (2) e due strati n (3, 4) di drogaggio differente. La giunzione pn fra lo strato p (2) e lo strato n (3) di forte drogaggio è disposta in particolare nel Chip (81), in modo tale da essere situata completamente nell'interno del Chip. La giunzione pn fra lo strato p (2) e lo strato n (4) è situata nelle zone esterne del Chip (1). Con questa disposizione si ottiene che sul lato esterno del Chip non compaiono elevate intensità di campo e contemporaneamente si producono proprietà ben riproducibili. Il procedimento di fabbricazione presentato può essere utilizzato anche al di fuori di uno spazio puro.(Fig. 3).
ITMI941237A 1993-06-23 1994-06-14 Disposizione a semiconduttori e procedimento di fabbricazione IT1270220B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4320780A DE4320780B4 (de) 1993-06-23 1993-06-23 Halbleiteranordnung und Verfahren zur Herstellung

Publications (3)

Publication Number Publication Date
ITMI941237A0 ITMI941237A0 (it) 1994-06-14
ITMI941237A1 ITMI941237A1 (it) 1995-12-14
IT1270220B true IT1270220B (it) 1997-04-29

Family

ID=6490978

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI941237A IT1270220B (it) 1993-06-23 1994-06-14 Disposizione a semiconduttori e procedimento di fabbricazione

Country Status (5)

Country Link
US (1) US5541140A (it)
JP (1) JP3902674B2 (it)
DE (1) DE4320780B4 (it)
FR (1) FR2707041A1 (it)
IT (1) IT1270220B (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19538853A1 (de) * 1995-10-19 1997-04-24 Bosch Gmbh Robert Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
US6368932B1 (en) 1998-01-21 2002-04-09 Robert Bosch Gmbh Method for producing diodes
DE19938209B4 (de) * 1999-08-12 2007-12-27 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zur Herstellung
DE19942879A1 (de) * 1999-09-08 2001-03-15 Bosch Gmbh Robert Halbleiterelement und Verfahren zur Herstellung des Halbleiterbauelements
DE10057612B4 (de) * 2000-11-21 2012-03-08 Infineon Technologies Ag Vertikales Halbleiterbauelement mit vertikalem Randabschluss
DE10065525B4 (de) * 2000-12-28 2006-07-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Halbleiteranordnung mit einem PN-Übergang
US6555480B2 (en) 2001-07-31 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate with fluidic channel and method of manufacturing
DE10159498A1 (de) * 2001-12-04 2003-06-12 Bosch Gmbh Robert Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung
AU2002351686B2 (en) 2002-01-15 2008-04-10 Robert Bosch Gmbh Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement
US6981759B2 (en) * 2002-04-30 2006-01-03 Hewlett-Packard Development Company, Lp. Substrate and method forming substrate for fluid ejection device
US6554403B1 (en) * 2002-04-30 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate for fluid ejection device
DE10243813A1 (de) 2002-09-20 2004-04-01 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zu ihrer Herstellung
US6910758B2 (en) * 2003-07-15 2005-06-28 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for fluid ejection device
JP4251326B2 (ja) * 2004-03-30 2009-04-08 サンケン電気株式会社 半導体装置
DE102004063180B4 (de) * 2004-12-29 2020-02-06 Robert Bosch Gmbh Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente
DE102006049683B3 (de) * 2006-10-13 2008-05-29 Q-Cells Ag Verfahren und Vorrichtung zum Charakterisieren von Wafern bei der Herstellung von Solarzellen
JP5213350B2 (ja) * 2007-04-26 2013-06-19 関西電力株式会社 炭化珪素ツェナーダイオード
DE102017209590A1 (de) * 2017-06-07 2018-12-13 Robert Bosch Gmbh PN-Diode
CN114171605B (zh) * 2021-12-03 2024-08-30 杭州赛晶电子有限公司 一种p型杂质扩散结屏蔽栅硅二极管的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3264149A (en) * 1963-12-19 1966-08-02 Bell Telephone Labor Inc Method of making semiconductor devices
DE2310453C3 (de) * 1973-03-02 1981-11-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes
FR2301921A1 (fr) * 1975-02-18 1976-09-17 Silec Semi Conducteurs Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication
JPS5356972A (en) * 1976-11-01 1978-05-23 Mitsubishi Electric Corp Mesa type semiconductor device
DE4130247A1 (de) * 1991-09-12 1993-03-18 Bosch Gmbh Robert Halbleiteranordnung und verfahren zu deren herstellung
JP2570022B2 (ja) * 1991-09-20 1997-01-08 株式会社日立製作所 定電圧ダイオード及びそれを用いた電力変換装置並びに定電圧ダイオードの製造方法

Also Published As

Publication number Publication date
JP3902674B2 (ja) 2007-04-11
FR2707041A1 (en) 1994-12-30
FR2707041B1 (it) 1997-01-03
US5541140A (en) 1996-07-30
JPH0738123A (ja) 1995-02-07
DE4320780A1 (de) 1995-03-09
DE4320780B4 (de) 2007-07-12
ITMI941237A0 (it) 1994-06-14
ITMI941237A1 (it) 1995-12-14

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970828