IT1007410B - Struttura di semiconduttore comprendente un transistor ad effetto di campo di modo eleva tore utilizzante un substrato di alta resistivita e procedi mento per formare la struttura stessa - Google Patents
Struttura di semiconduttore comprendente un transistor ad effetto di campo di modo eleva tore utilizzante un substrato di alta resistivita e procedi mento per formare la struttura stessaInfo
- Publication number
- IT1007410B IT1007410B IT2055774A IT2055774A IT1007410B IT 1007410 B IT1007410 B IT 1007410B IT 2055774 A IT2055774 A IT 2055774A IT 2055774 A IT2055774 A IT 2055774A IT 1007410 B IT1007410 B IT 1007410B
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect transistor
- mode field
- high strength
- structure including
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33758873A | 1973-03-02 | 1973-03-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1007410B true IT1007410B (it) | 1976-10-30 |
Family
ID=23321143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2055774A IT1007410B (it) | 1973-03-02 | 1974-04-08 | Struttura di semiconduttore comprendente un transistor ad effetto di campo di modo eleva tore utilizzante un substrato di alta resistivita e procedi mento per formare la struttura stessa |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5048880A (it) |
| CA (1) | CA1010154A (it) |
| DE (1) | DE2409899A1 (it) |
| FR (1) | FR2220098A1 (it) |
| GB (1) | GB1432309A (it) |
| IT (1) | IT1007410B (it) |
| NL (1) | NL7402828A (it) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4398964A (en) * | 1981-12-10 | 1983-08-16 | Signetics Corporation | Method of forming ion implants self-aligned with a cut |
| GB2123605A (en) * | 1982-06-22 | 1984-02-01 | Standard Microsyst Smc | MOS integrated circuit structure and method for its fabrication |
| GB2199694A (en) * | 1986-12-23 | 1988-07-13 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
-
1974
- 1974-02-25 GB GB844574A patent/GB1432309A/en not_active Expired
- 1974-03-01 DE DE19742409899 patent/DE2409899A1/de active Pending
- 1974-03-01 FR FR7407133A patent/FR2220098A1/fr not_active Withdrawn
- 1974-03-01 NL NL7402828A patent/NL7402828A/xx unknown
- 1974-03-01 CA CA193,839A patent/CA1010154A/en not_active Expired
- 1974-03-02 JP JP2471074A patent/JPS5048880A/ja active Pending
- 1974-04-08 IT IT2055774A patent/IT1007410B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2220098A1 (it) | 1974-09-27 |
| JPS5048880A (it) | 1975-05-01 |
| GB1432309A (en) | 1976-04-14 |
| CA1010154A (en) | 1977-05-10 |
| NL7402828A (it) | 1974-09-04 |
| DE2409899A1 (de) | 1974-09-12 |
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