IT1167388B - Memoria a semiconduttori a celle di memoria dinamica - Google Patents

Memoria a semiconduttori a celle di memoria dinamica

Info

Publication number
IT1167388B
IT1167388B IT22980/83A IT2298083A IT1167388B IT 1167388 B IT1167388 B IT 1167388B IT 22980/83 A IT22980/83 A IT 22980/83A IT 2298083 A IT2298083 A IT 2298083A IT 1167388 B IT1167388 B IT 1167388B
Authority
IT
Italy
Prior art keywords
dynamic
memory
memory cells
semiconductor memory
semiconductor
Prior art date
Application number
IT22980/83A
Other languages
English (en)
Other versions
IT8322980A0 (it
Inventor
Onishi Yoshiaki
Kawamoto Hiroshi
Yasui Tokumasa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8322980A0 publication Critical patent/IT8322980A0/it
Application granted granted Critical
Publication of IT1167388B publication Critical patent/IT1167388B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
IT22980/83A 1982-09-24 1983-09-23 Memoria a semiconduttori a celle di memoria dinamica IT1167388B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164831A JPS5956292A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Publications (2)

Publication Number Publication Date
IT8322980A0 IT8322980A0 (it) 1983-09-23
IT1167388B true IT1167388B (it) 1987-05-13

Family

ID=15800754

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22980/83A IT1167388B (it) 1982-09-24 1983-09-23 Memoria a semiconduttori a celle di memoria dinamica

Country Status (10)

Country Link
US (1) US4564925A (it)
JP (1) JPS5956292A (it)
KR (1) KR940009078B1 (it)
DE (1) DE3334560A1 (it)
FR (1) FR2533739B1 (it)
GB (1) GB2127640B (it)
HK (1) HK70987A (it)
IT (1) IT1167388B (it)
MY (1) MY8700611A (it)
SG (1) SG36787G (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136084A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
JPS60211692A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 半導体記憶装置
JPS60242587A (ja) * 1984-05-16 1985-12-02 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ
US4633102A (en) * 1984-07-09 1986-12-30 Texas Instruments Incorporated High speed address transition detector circuit for dynamic read/write memory
JPS6151692A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 記憶装置
US4661931A (en) * 1985-08-05 1987-04-28 Motorola, Inc. Asynchronous row and column control
JPH0640439B2 (ja) * 1986-02-17 1994-05-25 日本電気株式会社 半導体記憶装置
JPH06101229B2 (ja) * 1986-09-09 1994-12-12 三菱電機株式会社 ダイナミツク・ランダム・アクセス・メモリ
US4780850A (en) * 1986-10-31 1988-10-25 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic random access memory
JPS63138598A (ja) * 1986-11-28 1988-06-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH01251496A (ja) * 1988-03-31 1989-10-06 Toshiba Corp スタティック型ランダムアクセスメモリ
JP2892757B2 (ja) * 1990-03-23 1999-05-17 三菱電機株式会社 半導体集積回路装置
DE4228213C2 (de) * 1991-09-19 1997-05-15 Siemens Ag Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betreiben

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240937B2 (it) * 1972-05-16 1977-10-15
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
US4156938A (en) * 1975-12-29 1979-05-29 Mostek Corporation MOSFET Memory chip with single decoder and bi-level interconnect lines
JPS5914827B2 (ja) * 1976-08-23 1984-04-06 株式会社日立製作所 アドレス選択システム
DE2935121A1 (de) * 1978-09-07 1980-03-27 Texas Instruments Inc Schreib/lese-halbleiterspeicher
US4339809A (en) * 1980-09-19 1982-07-13 Rca Corporation Noise protection circuits
US4338679A (en) * 1980-12-24 1982-07-06 Mostek Corporation Row driver circuit for semiconductor memory
DE3101520A1 (de) * 1981-01-19 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter halbleiterspeicher
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory

Also Published As

Publication number Publication date
GB8325232D0 (en) 1983-10-26
MY8700611A (en) 1987-12-31
FR2533739B1 (fr) 1991-06-07
JPS5956292A (ja) 1984-03-31
GB2127640A (en) 1984-04-11
FR2533739A1 (fr) 1984-03-30
KR940009078B1 (ko) 1994-09-29
KR840005888A (ko) 1984-11-19
DE3334560A1 (de) 1984-04-05
SG36787G (en) 1987-07-24
HK70987A (en) 1987-10-09
US4564925A (en) 1986-01-14
GB2127640B (en) 1986-01-02
IT8322980A0 (it) 1983-09-23

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950927