IN2014DN11141A - - Google Patents

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Publication number
IN2014DN11141A
IN2014DN11141A IN11141DEN2014A IN2014DN11141A IN 2014DN11141 A IN2014DN11141 A IN 2014DN11141A IN 11141DEN2014 A IN11141DEN2014 A IN 11141DEN2014A IN 2014DN11141 A IN2014DN11141 A IN 2014DN11141A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Hironobu Murata
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of IN2014DN11141A publication Critical patent/IN2014DN11141A/en

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
IN11141DEN2014 2012-06-08 2014-12-26 IN2014DN11141A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012131232 2012-06-08
PCT/JP2013/003533 WO2013183291A1 (ja) 2012-06-08 2013-06-05 撮像素子および撮像装置

Publications (1)

Publication Number Publication Date
IN2014DN11141A true IN2014DN11141A (enExample) 2015-09-25

Family

ID=49711697

Family Applications (1)

Application Number Title Priority Date Filing Date
IN11141DEN2014 IN2014DN11141A (enExample) 2012-06-08 2014-12-26

Country Status (6)

Country Link
US (4) US9832408B2 (enExample)
EP (2) EP2860965A4 (enExample)
JP (3) JP6265120B2 (enExample)
CN (4) CN109040626B (enExample)
IN (1) IN2014DN11141A (enExample)
WO (1) WO2013183291A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN109040626B (zh) 2012-06-08 2022-01-21 株式会社尼康 拍摄元件
JP6217458B2 (ja) * 2014-03-03 2017-10-25 ソニー株式会社 半導体装置およびその製造方法、並びに電子機器
WO2016046685A1 (en) * 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6608185B2 (ja) * 2015-06-18 2019-11-20 キヤノン株式会社 積層型イメージセンサおよび撮像装置
US9947700B2 (en) * 2016-02-03 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
WO2017169480A1 (ja) * 2016-03-31 2017-10-05 株式会社ニコン 撮像素子および撮像装置
EP3324545B1 (en) * 2016-11-22 2024-04-24 ams AG Image sensor and method for readout of an image sensor
WO2018109821A1 (ja) * 2016-12-13 2018-06-21 オリンパス株式会社 固体撮像装置および撮像装置
JP6869847B2 (ja) * 2017-08-01 2021-05-12 株式会社日立製作所 アナログデジタル変換器及びそれを用いた超音波診断装置用プローブ
JP7102119B2 (ja) * 2017-09-29 2022-07-19 キヤノン株式会社 半導体装置および機器
US10587278B2 (en) * 2018-02-20 2020-03-10 F.S. Brainard & Company Sensor to encoder signal converter
SE542767C2 (en) * 2018-05-15 2020-07-07 Xcounter Ab Sensor unit and radiation detector
CN118301495A (zh) * 2019-09-30 2024-07-05 株式会社尼康 拍摄元件及拍摄装置
JP7647262B2 (ja) * 2021-04-08 2025-03-18 株式会社ニコン 撮像素子および撮像装置
JP7574169B2 (ja) * 2021-11-12 2024-10-28 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体

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* Cited by examiner, † Cited by third party
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DE69913560T2 (de) * 1998-10-07 2004-09-30 Hamamatsu Photonics K.K., Hamamatsu Sehr schneller bildaufnehmer
JP4232755B2 (ja) * 2005-04-05 2009-03-04 株式会社デンソー イメージセンサ及びイメージセンサの制御方法
TW201101476A (en) 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
CN101228631A (zh) * 2005-06-02 2008-07-23 索尼株式会社 半导体图像传感器模块及其制造方法
JP2007096633A (ja) * 2005-09-28 2007-04-12 Matsushita Electric Ind Co Ltd 映像信号処理装置およびデジタルカメラ
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP5106092B2 (ja) * 2007-12-26 2012-12-26 パナソニック株式会社 固体撮像装置およびカメラ
TWI504256B (zh) * 2008-04-07 2015-10-11 Sony Corp 固態成像裝置,其訊號處理方法,及電子設備
JP5392533B2 (ja) * 2008-10-10 2014-01-22 ソニー株式会社 固体撮像素子、光学装置、信号処理装置及び信号処理システム
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JP5359611B2 (ja) * 2009-06-29 2013-12-04 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP5272860B2 (ja) * 2009-04-08 2013-08-28 ソニー株式会社 固体撮像素子およびカメラシステム
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TWI515885B (zh) 2009-12-25 2016-01-01 新力股份有限公司 半導體元件及其製造方法,及電子裝置
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JP5716347B2 (ja) * 2010-10-21 2015-05-13 ソニー株式会社 固体撮像装置及び電子機器
JP5581982B2 (ja) * 2010-11-10 2014-09-03 株式会社ニコン 撮像装置
JP5633323B2 (ja) * 2010-11-11 2014-12-03 ソニー株式会社 固体撮像装置及び電子機器
JP5862126B2 (ja) * 2011-09-06 2016-02-16 ソニー株式会社 撮像素子および方法、並びに、撮像装置
US8890047B2 (en) * 2011-09-21 2014-11-18 Aptina Imaging Corporation Stacked-chip imaging systems
US8730081B2 (en) * 2012-03-19 2014-05-20 Omnivision Technologies, Inc. Calibration in multiple slope column parallel analog-to-digital conversion for image sensors
CN109040626B (zh) * 2012-06-08 2022-01-21 株式会社尼康 拍摄元件

Also Published As

Publication number Publication date
CN109068074B (zh) 2022-01-25
WO2013183291A1 (ja) 2013-12-12
JP2018082464A (ja) 2018-05-24
JPWO2013183291A1 (ja) 2016-01-28
CN109068074A (zh) 2018-12-21
EP2860965A1 (en) 2015-04-15
US20180098016A1 (en) 2018-04-05
JP6265120B2 (ja) 2018-01-24
US20190260956A1 (en) 2019-08-22
CN109089061B (zh) 2022-01-21
EP3496394A1 (en) 2019-06-12
US10652495B2 (en) 2020-05-12
US9832408B2 (en) 2017-11-28
JP6631615B2 (ja) 2020-01-15
CN104380714A (zh) 2015-02-25
US10321082B2 (en) 2019-06-11
EP2860965A4 (en) 2016-01-06
JP6977756B2 (ja) 2021-12-08
CN104380714B (zh) 2018-10-23
US20150163441A1 (en) 2015-06-11
US11418747B2 (en) 2022-08-16
JP2020061756A (ja) 2020-04-16
CN109089061A (zh) 2018-12-25
CN109040626A (zh) 2018-12-18
CN109040626B (zh) 2022-01-21
US20200244915A1 (en) 2020-07-30

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