JP6631615B2 - 撮像素子および撮像装置 - Google Patents
撮像素子および撮像装置 Download PDFInfo
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- JP6631615B2 JP6631615B2 JP2017254942A JP2017254942A JP6631615B2 JP 6631615 B2 JP6631615 B2 JP 6631615B2 JP 2017254942 A JP2017254942 A JP 2017254942A JP 2017254942 A JP2017254942 A JP 2017254942A JP 6631615 B2 JP6631615 B2 JP 6631615B2
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- 238000009825 accumulation Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
[非特許文献1]"A Very Low Area ADC for 3-D Stacked CMOS Image Processing System" K. Kiyoyama 他, IEEE 3DIC 2012.
Claims (6)
- 複数の画素を含む第1撮像領域と、前記第1撮像領域に対して第1方向に配置された複数の画素を含む第2撮像領域と、を有する撮像チップと、
前記第1撮像領域の第1画素から出力された信号と前記第2撮像領域の第2画素から出力された信号とを信号処理する第1信号処理回路と、前記第1撮像領域の第3画素から出力された信号と前記第2撮像領域の第4画素から出力された信号とを信号処理する第2信号処理回路と、を有し、前記撮像チップに積層された信号処理チップと、を備え、
前記第1撮像領域の複数の画素からの信号の読み出しを制御する第1制御線と、前記第2撮像領域の複数の画素からの信号の読み出しを制御する前記第1制御線と異なる第2制御線と、が設けられ、
前記第1画素及び前記第2画素から信号が出力される第1出力配線は、前記撮像チップの前記複数の画素が配置された領域の外側に設けられた第1TSVを介して前記第1信号処理回路と接続され、
前記第3画素及び前記第4画素から信号が出力される第2出力配線は、前記撮像チップの前記複数の画素が配置された領域の外側に設けられた第2TSVを介して前記第2信号処理回路と接続される
撮像素子。 - 請求項1に記載の撮像素子において、
前記第1撮像領域に対応した前記撮像チップの下の位置に、前記第1信号処理回路が配置され、
前記第2撮像領域に対応した前記撮像チップの下の位置に、前記第2信号処理回路が配置される撮像素子。 - 請求項1又は2に記載の撮像素子において、
前記第1TSVと前記第2TSVとは、前記撮像チップの前記複数の画素が配置された領域を前記第1方向から挟む位置にそれぞれ設けられた撮像素子。 - 請求項3に記載の撮像素子において、
前記第1TSVは、前記第2信号処理回路より前記第1信号処理回路に近い位置に設けられ、前記第2TSVは、前記第1信号処理回路より前記第2信号処理回路に近い位置に設けられた撮像素子。 - 請求項1から4のいずれか一項に記載の撮像素子において、
前記第1信号処理回路は、前記第1画素及び前記第2画素から出力される信号をデジタル信号に変換する第1A/Dコンバータであり、
前記第2信号処理回路は、前記第3画素及び前記第4画素から出力される信号をデジタル信号に変換する第2A/Dコンバータである撮像素子。 - 請求項1から5のいずれか一項に記載の撮像素子を備える撮像装置。
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JP6608185B2 (ja) * | 2015-06-18 | 2019-11-20 | キヤノン株式会社 | 積層型イメージセンサおよび撮像装置 |
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Also Published As
Publication number | Publication date |
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CN109089061A (zh) | 2018-12-25 |
US20180098016A1 (en) | 2018-04-05 |
EP2860965A4 (en) | 2016-01-06 |
US11418747B2 (en) | 2022-08-16 |
US20200244915A1 (en) | 2020-07-30 |
JPWO2013183291A1 (ja) | 2016-01-28 |
US20150163441A1 (en) | 2015-06-11 |
JP2020061756A (ja) | 2020-04-16 |
JP6265120B2 (ja) | 2018-01-24 |
US10321082B2 (en) | 2019-06-11 |
CN109068074A (zh) | 2018-12-21 |
EP3496394A1 (en) | 2019-06-12 |
US10652495B2 (en) | 2020-05-12 |
US9832408B2 (en) | 2017-11-28 |
EP2860965A1 (en) | 2015-04-15 |
CN104380714B (zh) | 2018-10-23 |
CN109068074B (zh) | 2022-01-25 |
CN104380714A (zh) | 2015-02-25 |
JP2018082464A (ja) | 2018-05-24 |
US20190260956A1 (en) | 2019-08-22 |
JP6977756B2 (ja) | 2021-12-08 |
CN109040626B (zh) | 2022-01-21 |
CN109040626A (zh) | 2018-12-18 |
CN109089061B (zh) | 2022-01-21 |
WO2013183291A1 (ja) | 2013-12-12 |
IN2014DN11141A (ja) | 2015-09-25 |
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