IN2007DE03488A - - Google Patents
Info
- Publication number
- IN2007DE03488A IN2007DE03488A IN3488DE2007A IN2007DE03488A IN 2007DE03488 A IN2007DE03488 A IN 2007DE03488A IN 3488DE2007 A IN3488DE2007 A IN 3488DE2007A IN 2007DE03488 A IN2007DE03488 A IN 2007DE03488A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62770004P | 2004-11-12 | 2004-11-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2007DE03488A true IN2007DE03488A (nl) | 2007-08-31 |
Family
ID=36337269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3488DE2007 IN2007DE03488A (nl) | 2004-11-12 | 2007-05-10 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7303992B2 (nl) |
| EP (1) | EP1810322B1 (nl) |
| JP (1) | JP4888913B2 (nl) |
| KR (1) | KR101138588B1 (nl) |
| CN (1) | CN101099231B (nl) |
| IN (1) | IN2007DE03488A (nl) |
| TW (2) | TW200632147A (nl) |
| WO (1) | WO2006053242A2 (nl) |
Families Citing this family (57)
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|---|---|---|---|---|
| US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| JP2006336031A (ja) * | 2005-05-31 | 2006-12-14 | Toray Eng Co Ltd | 硫酸銅メッキ浴及びそのメッキ浴を使用したメッキ方法 |
| WO2007076898A1 (de) * | 2006-01-06 | 2007-07-12 | Enthone Inc | Elektrolyt und verfahren zur abscheidung einer matten metallschicht |
| US7968455B2 (en) * | 2006-10-17 | 2011-06-28 | Enthone Inc. | Copper deposition for filling features in manufacture of microelectronic devices |
| US20080111237A1 (en) * | 2006-11-14 | 2008-05-15 | Texas Instruments Incorporated | Semiconductor device manufactured using an electrochemical deposition process for copper interconnects |
| JP5558675B2 (ja) * | 2007-04-03 | 2014-07-23 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 金属メッキ組成物 |
| TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
| US7905994B2 (en) | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
| US20090250352A1 (en) * | 2008-04-04 | 2009-10-08 | Emat Technology, Llc | Methods for electroplating copper |
| US8058126B2 (en) | 2009-02-04 | 2011-11-15 | Micron Technology, Inc. | Semiconductor devices and structures including at least partially formed container capacitors and methods of forming the same |
| JP5722872B2 (ja) * | 2009-04-07 | 2015-05-27 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 |
| KR20120005023A (ko) * | 2009-04-07 | 2012-01-13 | 바스프 에스이 | 무공극 서브미크론 특징부 충전을 위한 억제제를 포함하는 금속 도금용 조성물 |
| EP2417283B1 (en) * | 2009-04-07 | 2014-07-30 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| WO2010115757A1 (en) | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
| US10392531B2 (en) | 2009-11-30 | 2019-08-27 | Basf Se | Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process |
| WO2011064735A1 (en) | 2009-11-30 | 2011-06-03 | Basf Se | Process for removing bulk material layer from substrate and chemical mechanical polishing agent suitable for this process |
| CN106245073B (zh) | 2010-05-19 | 2019-12-20 | 诺发系统有限公司 | 用金属电化学填充高纵横比的大型凹入特征的方法、水溶液电镀槽溶液、电镀设备以及系统 |
| TWI572750B (zh) | 2010-05-24 | 2017-03-01 | 安頌股份有限公司 | 直通矽穿孔之銅充填 |
| JP6196155B2 (ja) | 2010-09-08 | 2017-09-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法 |
| KR101967134B1 (ko) | 2010-09-08 | 2019-04-09 | 바스프 에스이 | Ｎ-치환 디아제늄 디옥시드 및/또는 ｎ´-히드록시-디아제늄 옥시드 염을 함유하는 수성 폴리싱 조성물 |
| JP5965906B2 (ja) | 2010-09-08 | 2016-08-10 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法 |
| CN103249789B (zh) | 2010-10-07 | 2016-01-13 | 巴斯夫欧洲公司 | 含水抛光组合物及化学机械抛光具有图案化或未图案化低k电介质层的基材的方法 |
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| US10541140B2 (en) | 2011-01-26 | 2020-01-21 | Macdermid Enthone Inc. | Process for filling vias in the microelectronics |
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| TWI710671B (zh) | 2014-09-15 | 2020-11-21 | 美商麥德美樂思公司 | 微電子技術中銅沈積用之平整劑 |
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| KR102446480B1 (ko) | 2016-09-22 | 2022-09-26 | 맥더미드 엔쏜 인코포레이티드 | 집적 회로의 웨이퍼 레벨 패키징에서의 구리 침착 |
| CN109952390A (zh) | 2016-09-22 | 2019-06-28 | 麦克德米德乐思公司 | 在微电子件中的铜的电沉积 |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
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| CN110100048B (zh) | 2016-12-20 | 2022-06-21 | 巴斯夫欧洲公司 | 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 |
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| US10662586B2 (en) | 2017-06-28 | 2020-05-26 | Gpcp Ip Holdings Llc | Cationic polyetheramine dispersants for preparing papermaking stock |
| CN108166030B (zh) * | 2017-12-20 | 2022-11-08 | 深圳市板明科技股份有限公司 | 一种通孔直流电镀填孔药水 |
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| US11512406B2 (en) * | 2019-10-17 | 2022-11-29 | Rohm And Haas Electronic Materials Llc | Method of enhancing copper electroplating |
| CN115720598A (zh) * | 2020-07-13 | 2023-02-28 | 巴斯夫欧洲公司 | 用于在钴晶种上电镀铜的组合物 |
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2005
- 2005-11-11 TW TW940139666A patent/TW200632147A/zh unknown
- 2005-11-11 TW TW094139666A patent/TWI400365B/zh active
- 2005-11-14 JP JP2007541369A patent/JP4888913B2/ja active Active
- 2005-11-14 WO PCT/US2005/040996 patent/WO2006053242A2/en active Application Filing
- 2005-11-14 CN CN2005800464486A patent/CN101099231B/zh active Active
- 2005-11-14 KR KR1020077013226A patent/KR101138588B1/ko active IP Right Grant
- 2005-11-14 EP EP05851560.2A patent/EP1810322B1/en active Active
- 2005-11-14 US US11/272,999 patent/US7303992B2/en active Active
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2007
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- 2007-08-28 US US11/846,385 patent/US7815786B2/en not_active Ceased
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2018
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Also Published As
| Publication number | Publication date |
|---|---|
| US7303992B2 (en) | 2007-12-04 |
| JP4888913B2 (ja) | 2012-02-29 |
| WO2006053242A3 (en) | 2006-06-29 |
| US20070289875A1 (en) | 2007-12-20 |
| EP1810322B1 (en) | 2022-07-27 |
| WO2006053242A2 (en) | 2006-05-18 |
| CN101099231B (zh) | 2011-06-29 |
| EP1810322A4 (en) | 2015-06-10 |
| TWI400365B (zh) | 2013-07-01 |
| US20060141784A1 (en) | 2006-06-29 |
| JP2008519908A (ja) | 2008-06-12 |
| KR20070086082A (ko) | 2007-08-27 |
| TW200632147A (nl) | 2006-09-16 |
| EP1810322A2 (en) | 2007-07-25 |
| KR101138588B1 (ko) | 2012-06-27 |
| US7815786B2 (en) | 2010-10-19 |
| CN101099231A (zh) | 2008-01-02 |
| USRE49202E1 (en) | 2022-09-06 |