HUE045655T2 - Irányított automatikus frissítés szinkronizálás - Google Patents
Irányított automatikus frissítés szinkronizálásInfo
- Publication number
- HUE045655T2 HUE045655T2 HUE05855572A HUE05855572A HUE045655T2 HU E045655 T2 HUE045655 T2 HU E045655T2 HU E05855572 A HUE05855572 A HU E05855572A HU E05855572 A HUE05855572 A HU E05855572A HU E045655 T2 HUE045655 T2 HU E045655T2
- Authority
- HU
- Hungary
- Prior art keywords
- directed auto
- refresh synchronization
- refresh
- synchronization
- auto
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
- G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
- G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Memory System (AREA)
- Multi Processors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64010004P | 2004-12-28 | 2004-12-28 | |
| US11/115,915 US7953921B2 (en) | 2004-12-28 | 2005-04-27 | Directed auto-refresh synchronization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HUE045655T2 true HUE045655T2 (hu) | 2020-01-28 |
Family
ID=36178030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HUE05855572A HUE045655T2 (hu) | 2004-12-28 | 2005-12-23 | Irányított automatikus frissítés szinkronizálás |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US7953921B2 (hu) |
| EP (2) | EP3531421B1 (hu) |
| JP (5) | JP5032337B2 (hu) |
| KR (1) | KR101166949B1 (hu) |
| CN (1) | CN101091221B (hu) |
| BR (1) | BRPI0519703B1 (hu) |
| ES (1) | ES2744354T3 (hu) |
| HK (1) | HK1109492A1 (hu) |
| HU (1) | HUE045655T2 (hu) |
| IL (1) | IL184020A0 (hu) |
| TW (1) | TWI385673B (hu) |
| WO (1) | WO2006071854A1 (hu) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7751894B1 (en) * | 2004-03-04 | 2010-07-06 | Cardiac Pacemakers, Inc. | Systems and methods for indicating aberrant behavior detected by an implanted medical device |
| US7953921B2 (en) * | 2004-12-28 | 2011-05-31 | Qualcomm Incorporated | Directed auto-refresh synchronization |
| US9286198B2 (en) | 2005-04-21 | 2016-03-15 | Violin Memory | Method and system for storage of data in non-volatile media |
| US8452929B2 (en) | 2005-04-21 | 2013-05-28 | Violin Memory Inc. | Method and system for storage of data in non-volatile media |
| US9384818B2 (en) * | 2005-04-21 | 2016-07-05 | Violin Memory | Memory power management |
| US7565479B2 (en) | 2005-08-04 | 2009-07-21 | Rambus Inc. | Memory with refresh cycle donation to accommodate low-retention-storage rows |
| KR100640722B1 (ko) * | 2005-10-05 | 2006-11-01 | 삼성전자주식회사 | 반도체 제어장치, 반도체 장치, 및 이들을 구비하는 시스템 |
| US20070086261A1 (en) * | 2005-10-17 | 2007-04-19 | Freebern Margaret C | Directed auto-refresh for a dynamic random access memory |
| US9262326B2 (en) * | 2006-08-14 | 2016-02-16 | Qualcomm Incorporated | Method and apparatus to enable the cooperative signaling of a shared bus interrupt in a multi-rank memory subsystem |
| US8028186B2 (en) | 2006-10-23 | 2011-09-27 | Violin Memory, Inc. | Skew management in an interconnection system |
| US7590021B2 (en) * | 2007-07-26 | 2009-09-15 | Qualcomm Incorporated | System and method to reduce dynamic RAM power consumption via the use of valid data indicators |
| CN101640065B (zh) * | 2008-07-29 | 2012-07-04 | 国际商业机器公司 | 用于嵌入式dram的刷新控制器及刷新控制方法 |
| US8949520B2 (en) | 2009-01-22 | 2015-02-03 | Rambus Inc. | Maintenance operations in a DRAM |
| US8392650B2 (en) * | 2010-04-01 | 2013-03-05 | Intel Corporation | Fast exit from self-refresh state of a memory device |
| US20110296098A1 (en) * | 2010-06-01 | 2011-12-01 | Dell Products L.P. | System and Method for Reducing Power Consumption of Memory |
| US9292426B2 (en) | 2010-09-24 | 2016-03-22 | Intel Corporation | Fast exit from DRAM self-refresh |
| US9053812B2 (en) | 2010-09-24 | 2015-06-09 | Intel Corporation | Fast exit from DRAM self-refresh |
| KR101796116B1 (ko) | 2010-10-20 | 2017-11-10 | 삼성전자 주식회사 | 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법 |
| TWI473090B (zh) * | 2011-08-08 | 2015-02-11 | Winbond Electronics Corp | 動態記憶體的重刷新電路及方法 |
| CN102956260B (zh) * | 2011-08-19 | 2015-12-16 | 华邦电子股份有限公司 | 动态存储器的重刷新电路及方法 |
| US9293187B2 (en) * | 2011-09-26 | 2016-03-22 | Cisco Technology, Inc. | Methods and apparatus for refreshing digital memory circuits |
| EP2620838B1 (en) * | 2012-01-26 | 2015-04-22 | ST-Ericsson SA | Automatic partial array self-refresh |
| US9007862B2 (en) | 2012-07-12 | 2015-04-14 | Rambus Inc. | Reducing memory refresh exit time |
| US9355704B2 (en) * | 2012-12-28 | 2016-05-31 | Mediatek Inc. | Refresh method for switching between different refresh types based on at least one parameter of volatile memory and related memory controller |
| US9117542B2 (en) * | 2013-09-27 | 2015-08-25 | Intel Corporation | Directed per bank refresh command |
| KR102194003B1 (ko) | 2014-02-25 | 2020-12-22 | 삼성전자주식회사 | 메모리 모듈 및 이를 포함하는 메모리 시스템 |
| KR102326018B1 (ko) * | 2015-08-24 | 2021-11-12 | 삼성전자주식회사 | 메모리 시스템 |
| KR20170045795A (ko) * | 2015-10-20 | 2017-04-28 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
| KR102373544B1 (ko) | 2015-11-06 | 2022-03-11 | 삼성전자주식회사 | 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법 |
| US9754655B2 (en) | 2015-11-24 | 2017-09-05 | Qualcomm Incorporated | Controlling a refresh mode of a dynamic random access memory (DRAM) die |
| CN106875971B (zh) * | 2017-02-16 | 2021-01-22 | 上海兆芯集成电路有限公司 | 动态随机存取存储器控制器及其控制方法 |
| US10878879B2 (en) * | 2017-06-21 | 2020-12-29 | Mediatek Inc. | Refresh control method for memory system to perform refresh action on all memory banks of the memory system within refresh window |
| US10262719B1 (en) * | 2017-12-22 | 2019-04-16 | Nanya Technology Corporation | DRAM and refresh method thereof |
| US11011217B1 (en) * | 2019-12-20 | 2021-05-18 | Micron Technology, Inc. | Selective extension of a fine granularity mode for memory refresh operations |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4687107A (en) * | 1985-05-02 | 1987-08-18 | Pennwalt Corporation | Apparatus for sizing and sorting articles |
| JPH06124587A (ja) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | ダイナミックランダムアクセスメモリ装置 |
| JPH0877770A (ja) * | 1994-08-31 | 1996-03-22 | Sanyo Electric Co Ltd | リフレッシュアドレスカウンタ |
| US5627791A (en) | 1996-02-16 | 1997-05-06 | Micron Technology, Inc. | Multiple bank memory with auto refresh to specified bank |
| JP4000206B2 (ja) * | 1996-08-29 | 2007-10-31 | 富士通株式会社 | 半導体記憶装置 |
| JPH10247384A (ja) * | 1997-03-03 | 1998-09-14 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| JPH1166843A (ja) * | 1997-08-08 | 1999-03-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
| WO1999019879A1 (en) | 1997-10-10 | 1999-04-22 | Rambus Incorporated | Dram core refresh with reduced spike current |
| WO1999046775A2 (en) * | 1998-03-10 | 1999-09-16 | Rambus, Inc. | Performing concurrent refresh and current control operations in a memory subsystem |
| KR100355226B1 (ko) * | 1999-01-12 | 2002-10-11 | 삼성전자 주식회사 | 뱅크별로 선택적인 셀프 리프레쉬가 가능한 동적 메모리장치 |
| JP2000315385A (ja) * | 1999-04-30 | 2000-11-14 | Nec Ic Microcomput Syst Ltd | セルフリフレッシュ回路及びセルフリフレッシュ方法 |
| JP2001332083A (ja) * | 2000-05-18 | 2001-11-30 | Nec Corp | 半導体記憶装置およびそのアドレス制御方法 |
| KR100429872B1 (ko) * | 2001-06-27 | 2004-05-04 | 삼성전자주식회사 | 반도체 메모리 장치의 이용 효율을 높이는 메모리 시스템및 상기 반도체 메모리 장치의 리프레쉬 방법 |
| JP2003123469A (ja) * | 2001-10-05 | 2003-04-25 | Seiko Epson Corp | メモリ制御回路、メモリ制御方法及び情報処理装置 |
| US6665224B1 (en) * | 2002-05-22 | 2003-12-16 | Infineon Technologies Ag | Partial refresh for synchronous dynamic random access memory (SDRAM) circuits |
| DE10306062B3 (de) | 2003-02-13 | 2004-08-19 | Infineon Technologies Ag | Speichermodul mit einer Mehrzahl von integrierten Speicherbauelementen und einer Refresh-Steuerschaltung |
| US7236416B2 (en) | 2004-05-21 | 2007-06-26 | Qualcomm Incorporated | Method and system for controlling refresh in volatile memories |
| US7088633B2 (en) * | 2004-05-27 | 2006-08-08 | Qualcomm Incorporated | Method and system for providing seamless self-refresh for directed bank refresh in volatile memories |
| US7079440B2 (en) * | 2004-05-27 | 2006-07-18 | Qualcomm Incorporated | Method and system for providing directed bank refresh for volatile memories |
| US7184350B2 (en) * | 2004-05-27 | 2007-02-27 | Qualcomm Incorporated | Method and system for providing independent bank refresh for volatile memories |
| US7200062B2 (en) * | 2004-08-31 | 2007-04-03 | Micron Technology, Inc. | Method and system for reducing the peak current in refreshing dynamic random access memory devices |
| US7953921B2 (en) * | 2004-12-28 | 2011-05-31 | Qualcomm Incorporated | Directed auto-refresh synchronization |
-
2005
- 2005-04-27 US US11/115,915 patent/US7953921B2/en active Active
- 2005-12-23 EP EP19169318.3A patent/EP3531421B1/en active Active
- 2005-12-23 JP JP2007549544A patent/JP5032337B2/ja active Active
- 2005-12-23 CN CN2005800451749A patent/CN101091221B/zh active Active
- 2005-12-23 BR BRPI0519703-1A patent/BRPI0519703B1/pt active IP Right Grant
- 2005-12-23 EP EP05855572.3A patent/EP1839313B1/en active Active
- 2005-12-23 ES ES05855572T patent/ES2744354T3/es active Active
- 2005-12-23 WO PCT/US2005/047037 patent/WO2006071854A1/en active Application Filing
- 2005-12-23 KR KR1020077017451A patent/KR101166949B1/ko active IP Right Grant
- 2005-12-23 HU HUE05855572A patent/HUE045655T2/hu unknown
- 2005-12-28 TW TW094147055A patent/TWI385673B/zh active
-
2007
- 2007-06-18 IL IL184020A patent/IL184020A0/en unknown
-
2008
- 2008-03-27 HK HK08103428.8A patent/HK1109492A1/xx unknown
-
2011
- 2011-11-18 JP JP2011252607A patent/JP2012089231A/ja not_active Withdrawn
-
2015
- 2015-08-06 JP JP2015156164A patent/JP6169658B2/ja active Active
-
2017
- 2017-01-11 JP JP2017002706A patent/JP6396515B2/ja active Active
-
2018
- 2018-04-09 JP JP2018074717A patent/JP2018137034A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW200632939A (en) | 2006-09-16 |
| JP6396515B2 (ja) | 2018-09-26 |
| CN101091221B (zh) | 2012-04-18 |
| JP2016006713A (ja) | 2016-01-14 |
| JP6169658B2 (ja) | 2017-07-26 |
| JP5032337B2 (ja) | 2012-09-26 |
| US7953921B2 (en) | 2011-05-31 |
| TWI385673B (zh) | 2013-02-11 |
| KR101166949B1 (ko) | 2012-07-23 |
| JP2008525942A (ja) | 2008-07-17 |
| JP2018137034A (ja) | 2018-08-30 |
| JP2017117510A (ja) | 2017-06-29 |
| ES2744354T3 (es) | 2020-02-24 |
| BRPI0519703B1 (pt) | 2018-02-06 |
| BRPI0519703A2 (pt) | 2009-03-10 |
| EP3531421B1 (en) | 2022-06-01 |
| EP1839313A1 (en) | 2007-10-03 |
| HK1109492A1 (en) | 2008-06-06 |
| CN101091221A (zh) | 2007-12-19 |
| JP2012089231A (ja) | 2012-05-10 |
| WO2006071854A1 (en) | 2006-07-06 |
| EP1839313B1 (en) | 2019-06-05 |
| EP3531421A1 (en) | 2019-08-28 |
| IL184020A0 (en) | 2007-10-31 |
| US20060143372A1 (en) | 2006-06-29 |
| KR20070103013A (ko) | 2007-10-22 |
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