HK28597A - Circuit for generating internal supply voltage - Google Patents
Circuit for generating internal supply voltageInfo
- Publication number
- HK28597A HK28597A HK28597A HK28597A HK28597A HK 28597 A HK28597 A HK 28597A HK 28597 A HK28597 A HK 28597A HK 28597 A HK28597 A HK 28597A HK 28597 A HK28597 A HK 28597A
- Authority
- HK
- Hong Kong
- Prior art keywords
- circuit
- supply voltage
- internal supply
- generating internal
- generating
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Control Of Electrical Variables (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Power Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910009659A KR940003406B1 (ko) | 1991-06-12 | 1991-06-12 | 내부 전원전압 발생회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK28597A true HK28597A (en) | 1997-03-21 |
Family
ID=19315675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK28597A HK28597A (en) | 1991-06-12 | 1997-03-13 | Circuit for generating internal supply voltage |
Country Status (12)
Country | Link |
---|---|
US (1) | US5146152A (ja) |
JP (1) | JPH0793006B2 (ja) |
KR (1) | KR940003406B1 (ja) |
CN (1) | CN1090775C (ja) |
DE (1) | DE4124427C2 (ja) |
FR (1) | FR2677793B1 (ja) |
GB (1) | GB2256731B (ja) |
HK (1) | HK28597A (ja) |
IT (1) | IT1251297B (ja) |
NL (1) | NL193703C (ja) |
RU (1) | RU2146388C1 (ja) |
TW (1) | TW238439B (ja) |
Families Citing this family (61)
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JP2727809B2 (ja) * | 1991-08-26 | 1998-03-18 | 日本電気株式会社 | 半導体集積回路 |
US5220273A (en) * | 1992-01-02 | 1993-06-15 | Etron Technology, Inc. | Reference voltage circuit with positive temperature compensation |
US5302888A (en) * | 1992-04-01 | 1994-04-12 | Texas Instruments Incorporated | CMOS integrated mid-supply voltage generator |
JPH05289760A (ja) * | 1992-04-06 | 1993-11-05 | Mitsubishi Electric Corp | 基準電圧発生回路 |
JP3122239B2 (ja) * | 1992-07-23 | 2001-01-09 | 株式会社東芝 | 半導体集積回路 |
JP2851767B2 (ja) * | 1992-10-15 | 1999-01-27 | 三菱電機株式会社 | 電圧供給回路および内部降圧回路 |
DE4334918C2 (de) * | 1992-10-15 | 2000-02-03 | Mitsubishi Electric Corp | Absenkkonverter zum Absenken einer externen Versorgungsspannung mit Kompensation herstellungsbedingter Abweichungen, seine Verwendung sowie zugehöriges Betriebsverfahren |
FR2718273B1 (fr) * | 1994-03-31 | 1996-05-24 | Sgs Thomson Microelectronics | Mémoire intégrée avec circuit de maintien de la tension de colonne. |
US5448159A (en) * | 1994-05-12 | 1995-09-05 | Matsushita Electronics Corporation | Reference voltage generator |
DE19654934B4 (de) * | 1995-02-06 | 2004-05-06 | Mitsubishi Denki K.K. | Halbleitereinrichtung |
US5757174A (en) * | 1995-07-19 | 1998-05-26 | Micro Linear Corporation | Current sensing technique using MOS transistor scaling with matched current sources |
EP0765037A3 (en) * | 1995-09-20 | 1998-01-14 | Texas Instruments Incorporated | Buffer for integrated circuit memories |
US5694073A (en) * | 1995-11-21 | 1997-12-02 | Texas Instruments Incorporated | Temperature and supply-voltage sensing circuit |
JP3234153B2 (ja) * | 1996-04-19 | 2001-12-04 | 株式会社東芝 | 半導体装置 |
FR2750240B1 (fr) * | 1996-06-20 | 1998-07-31 | Sgs Thomson Microelectronics | Generateur de reference de tension |
US5777514A (en) * | 1996-09-27 | 1998-07-07 | Micro Linear Corporation | Differential to single ended conversion technique for an operational amplifier having low input offset voltage, high speed and high gain |
US5770965A (en) * | 1996-09-30 | 1998-06-23 | Motorola, Inc. | Circuit and method of compensating for non-linearities in a sensor signal |
KR100481824B1 (ko) * | 1997-05-07 | 2005-07-08 | 삼성전자주식회사 | 리플레쉬용발진회로를갖는반도체메모리장치 |
DE19735381C1 (de) * | 1997-08-14 | 1999-01-14 | Siemens Ag | Bandgap-Referenzspannungsquelle und Verfahren zum Betreiben derselben |
US6018265A (en) * | 1997-12-10 | 2000-01-25 | Lexar Media, Inc. | Internal CMOS reference generator and voltage regulator |
US6107887A (en) * | 1998-10-02 | 2000-08-22 | Micro Linear Corporation | Differential to single-ended video cable driver having BICMOS current-mode operational amplifier |
JP2000124744A (ja) * | 1998-10-12 | 2000-04-28 | Texas Instr Japan Ltd | 定電圧発生回路 |
KR20000056765A (ko) * | 1999-02-25 | 2000-09-15 | 김영환 | 온도변화에 무관한 전압조정회로 |
KR100577552B1 (ko) * | 1999-04-20 | 2006-05-08 | 삼성전자주식회사 | 반도체 메모리 장치의 내부 전압 변환회로 |
US6404246B1 (en) | 2000-12-20 | 2002-06-11 | Lexa Media, Inc. | Precision clock synthesizer using RC oscillator and calibration circuit |
JP2002270768A (ja) * | 2001-03-08 | 2002-09-20 | Nec Corp | Cmos基準電圧回路 |
KR100439024B1 (ko) * | 2001-03-08 | 2004-07-03 | 삼성전자주식회사 | 기준전압 발생회로 |
KR100744109B1 (ko) * | 2001-10-23 | 2007-08-01 | 삼성전자주식회사 | 공정, 전압 및 온도의 변화에 따라 단자들의 상태를최적으로 변화시킬 수 있는 메모리 장치 |
JP3927788B2 (ja) * | 2001-11-01 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3964182B2 (ja) | 2001-11-02 | 2007-08-22 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3976665B2 (ja) * | 2002-11-20 | 2007-09-19 | 富士通株式会社 | バッファ回路装置 |
DE60312676D1 (de) * | 2003-07-22 | 2007-05-03 | Sgs Thomson Microelectronics | Referenzspannungsschaltung |
JP2006041175A (ja) * | 2004-07-27 | 2006-02-09 | Toshiba Corp | 半導体集積回路装置 |
KR100825029B1 (ko) * | 2006-05-31 | 2008-04-24 | 주식회사 하이닉스반도체 | 밴드갭 기준전압 발생장치 및 이를 구비하는 반도체 소자 |
KR100784918B1 (ko) * | 2006-10-13 | 2007-12-11 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 내부전압 발생기 |
US7969808B2 (en) * | 2007-07-20 | 2011-06-28 | Samsung Electronics Co., Ltd. | Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same |
KR20090116088A (ko) * | 2008-05-06 | 2009-11-11 | 삼성전자주식회사 | 정보 유지 능력과 동작 특성이 향상된 커패시터리스 1t반도체 메모리 소자 |
KR101358930B1 (ko) * | 2007-07-23 | 2014-02-05 | 삼성전자주식회사 | 전압 디바이더 및 이를 포함하는 내부 전원 전압 발생 회로 |
KR101308048B1 (ko) | 2007-10-10 | 2013-09-12 | 삼성전자주식회사 | 반도체 메모리 장치 |
CN101470458B (zh) * | 2007-12-26 | 2010-10-27 | 中国科学院微电子研究所 | 带隙基准电压参考电路 |
KR20090075063A (ko) * | 2008-01-03 | 2009-07-08 | 삼성전자주식회사 | 플로팅 바디 트랜지스터를 이용한 동적 메모리 셀을 가지는메모리 셀 어레이를 구비하는 반도체 메모리 장치 및 이장치의 동작 방법 |
KR20100070158A (ko) * | 2008-12-17 | 2010-06-25 | 삼성전자주식회사 | 커패시터가 없는 동작 메모리 셀을 구비한 반도체 메모리 장치 및 이 장치의 동작 방법 |
KR101442177B1 (ko) * | 2008-12-18 | 2014-09-18 | 삼성전자주식회사 | 커패시터 없는 1-트랜지스터 메모리 셀을 갖는 반도체소자의 제조방법들 |
JP5176971B2 (ja) * | 2009-01-15 | 2013-04-03 | 富士通株式会社 | 直流電位生成回路、多段回路、及び通信装置 |
JP2010219486A (ja) * | 2009-03-19 | 2010-09-30 | Renesas Electronics Corp | 中間電位発生回路 |
US20120194150A1 (en) * | 2011-02-01 | 2012-08-02 | Samsung Electro-Mechanics Company | Systems and methods for low-battery operation control in portable communication devices |
DE102011051111A1 (de) | 2011-06-16 | 2012-12-20 | Packsys Global (Switzerland) Ltd. | Verfahren zum Herstellen von Rohrkörpern für Verpackungstuben |
RU2461864C1 (ru) * | 2011-06-27 | 2012-09-20 | Федеральное государственное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВПО "ЮРГУЭС") | Источник опорного напряжения |
JP2013092958A (ja) * | 2011-10-27 | 2013-05-16 | Semiconductor Components Industries Llc | 電流検出回路及び電源回路 |
KR20130098041A (ko) * | 2012-02-27 | 2013-09-04 | 삼성전자주식회사 | 낮은 외부 전원 전압에 적합한 전압 발생부들 |
RU2518974C2 (ru) * | 2012-10-04 | 2014-06-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВПО "ЮРГУЭС") | Источник опорного напряжения |
FR3002049B1 (fr) * | 2013-02-13 | 2016-11-04 | Cddic | Regulateur de tension compense en temperature a faible courant de consommation |
KR102031685B1 (ko) * | 2013-12-31 | 2019-10-15 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 구동방법 |
CN104460811B (zh) * | 2014-12-26 | 2016-01-20 | 昆腾微电子股份有限公司 | 基准电压温度系数校准电路及其工作方法 |
CN106571824A (zh) * | 2015-10-08 | 2017-04-19 | 联发科技(新加坡)私人有限公司 | 信号处理电路 |
CN109874314B (zh) * | 2017-12-21 | 2021-08-17 | 北京比特大陆科技有限公司 | 串联供电电路、系统和方法 |
WO2019126946A1 (en) * | 2017-12-25 | 2019-07-04 | Texas Instruments Incorporated | Low-dropout regulator with load-adaptive frequency compensation |
CN110047523B (zh) * | 2018-01-15 | 2021-07-27 | 珠海兴芯存储科技有限公司 | 电阻性内存单元的准定压降自我中止写入方法及其电路 |
JP6522201B1 (ja) * | 2018-05-14 | 2019-05-29 | ウィンボンド エレクトロニクス コーポレーション | 半導体装置 |
CN109582076B (zh) * | 2019-01-09 | 2023-10-24 | 上海晟矽微电子股份有限公司 | 基准电流源 |
CN114167929B (zh) * | 2020-09-11 | 2023-03-24 | 兆易创新科技集团股份有限公司 | 电压产生电路及电子装置 |
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US4095164A (en) * | 1976-10-05 | 1978-06-13 | Rca Corporation | Voltage supply regulated in proportion to sum of positive- and negative-temperature-coefficient offset voltages |
JPS53103770A (en) * | 1977-02-22 | 1978-09-09 | Seiko Instr & Electronics Ltd | Electronic timepiece |
SU744513A1 (ru) * | 1978-03-06 | 1980-06-30 | Предприятие П/Я В-8450 | Стабилизатор напр жени посто нного тока |
JPS6029123B2 (ja) * | 1978-08-02 | 1985-07-09 | 富士通株式会社 | 電子回路 |
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US4298835A (en) * | 1979-08-27 | 1981-11-03 | Gte Products Corporation | Voltage regulator with temperature dependent output |
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JPH01124011A (ja) * | 1987-11-10 | 1989-05-16 | Furukawa Electric Co Ltd:The | Led駆動回路 |
KR910005599B1 (ko) * | 1989-05-01 | 1991-07-31 | 삼성전자 주식회사 | 고밀도 반도체 메모리장치의 전원 공급전압 변환회로 |
KR900019026A (ko) * | 1989-05-11 | 1990-12-22 | 김광호 | 반도체 장치의 기준전압 발생회로 |
JP2674669B2 (ja) * | 1989-08-23 | 1997-11-12 | 株式会社東芝 | 半導体集積回路 |
KR920010633A (ko) * | 1990-11-30 | 1992-06-26 | 김광호 | 반도체 메모리 장치의 기준전압 발생회로 |
-
1991
- 1991-06-12 KR KR1019910009659A patent/KR940003406B1/ko not_active IP Right Cessation
- 1991-07-02 US US07/724,796 patent/US5146152A/en not_active Expired - Lifetime
- 1991-07-10 TW TW080105360A patent/TW238439B/zh not_active IP Right Cessation
- 1991-07-18 FR FR9109071A patent/FR2677793B1/fr not_active Expired - Lifetime
- 1991-07-23 DE DE4124427A patent/DE4124427C2/de not_active Expired - Lifetime
- 1991-08-12 NL NL9101377A patent/NL193703C/nl not_active IP Right Cessation
- 1991-08-26 IT ITMI912287A patent/IT1251297B/it active IP Right Grant
- 1991-08-29 GB GB9118530A patent/GB2256731B/en not_active Expired - Fee Related
- 1991-08-29 RU SU5001410/A patent/RU2146388C1/ru active
- 1991-08-30 JP JP3244106A patent/JPH0793006B2/ja not_active Expired - Fee Related
- 1991-08-30 CN CN91108584A patent/CN1090775C/zh not_active Expired - Fee Related
-
1997
- 1997-03-13 HK HK28597A patent/HK28597A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1090775C (zh) | 2002-09-11 |
GB2256731B (en) | 1996-01-10 |
GB2256731A (en) | 1992-12-16 |
KR930001574A (ko) | 1993-01-16 |
FR2677793B1 (fr) | 1997-01-31 |
JPH04366492A (ja) | 1992-12-18 |
NL193703C (nl) | 2000-07-04 |
JPH0793006B2 (ja) | 1995-10-09 |
GB9118530D0 (en) | 1991-10-16 |
NL193703B (nl) | 2000-03-01 |
ITMI912287A0 (it) | 1991-08-26 |
CN1067751A (zh) | 1993-01-06 |
US5146152A (en) | 1992-09-08 |
IT1251297B (it) | 1995-05-08 |
RU2146388C1 (ru) | 2000-03-10 |
ITMI912287A1 (it) | 1992-12-13 |
DE4124427C2 (de) | 1994-06-30 |
KR940003406B1 (ko) | 1994-04-21 |
FR2677793A1 (fr) | 1992-12-18 |
DE4124427A1 (de) | 1992-12-17 |
TW238439B (ja) | 1995-01-11 |
NL9101377A (nl) | 1993-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20100829 |