TW238439B - - Google Patents

Info

Publication number
TW238439B
TW238439B TW080105360A TW80105360A TW238439B TW 238439 B TW238439 B TW 238439B TW 080105360 A TW080105360 A TW 080105360A TW 80105360 A TW80105360 A TW 80105360A TW 238439 B TW238439 B TW 238439B
Authority
TW
Taiwan
Application number
TW080105360A
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW238439B publication Critical patent/TW238439B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Power Sources (AREA)
TW080105360A 1991-06-12 1991-07-10 TW238439B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009659A KR940003406B1 (ko) 1991-06-12 1991-06-12 내부 전원전압 발생회로

Publications (1)

Publication Number Publication Date
TW238439B true TW238439B (zh) 1995-01-11

Family

ID=19315675

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080105360A TW238439B (zh) 1991-06-12 1991-07-10

Country Status (12)

Country Link
US (1) US5146152A (zh)
JP (1) JPH0793006B2 (zh)
KR (1) KR940003406B1 (zh)
CN (1) CN1090775C (zh)
DE (1) DE4124427C2 (zh)
FR (1) FR2677793B1 (zh)
GB (1) GB2256731B (zh)
HK (1) HK28597A (zh)
IT (1) IT1251297B (zh)
NL (1) NL193703C (zh)
RU (1) RU2146388C1 (zh)
TW (1) TW238439B (zh)

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JP3927788B2 (ja) * 2001-11-01 2007-06-13 株式会社ルネサステクノロジ 半導体装置
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KR101442177B1 (ko) * 2008-12-18 2014-09-18 삼성전자주식회사 커패시터 없는 1-트랜지스터 메모리 셀을 갖는 반도체소자의 제조방법들
JP5176971B2 (ja) * 2009-01-15 2013-04-03 富士通株式会社 直流電位生成回路、多段回路、及び通信装置
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JP2013092958A (ja) * 2011-10-27 2013-05-16 Semiconductor Components Industries Llc 電流検出回路及び電源回路
KR20130098041A (ko) * 2012-02-27 2013-09-04 삼성전자주식회사 낮은 외부 전원 전압에 적합한 전압 발생부들
RU2518974C2 (ru) * 2012-10-04 2014-06-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВПО "ЮРГУЭС") Источник опорного напряжения
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KR102031685B1 (ko) * 2013-12-31 2019-10-15 엘지디스플레이 주식회사 액정표시장치 및 그의 구동방법
CN104460811B (zh) * 2014-12-26 2016-01-20 昆腾微电子股份有限公司 基准电压温度系数校准电路及其工作方法
CN106571824A (zh) * 2015-10-08 2017-04-19 联发科技（新加坡）私人有限公司 信号处理电路
CN109874314B (zh) * 2017-12-21 2021-08-17 北京比特大陆科技有限公司 串联供电电路、系统和方法
WO2019126946A1 (en) * 2017-12-25 2019-07-04 Texas Instruments Incorporated Low-dropout regulator with load-adaptive frequency compensation
CN110047523B (zh) * 2018-01-15 2021-07-27 珠海兴芯存储科技有限公司 电阻性内存单元的准定压降自我中止写入方法及其电路
JP6522201B1 (ja) * 2018-05-14 2019-05-29 ウィンボンド エレクトロニクス コーポレーション 半導体装置
CN109582076B (zh) * 2019-01-09 2023-10-24 上海晟矽微电子股份有限公司 基准电流源
CN114167929B (zh) * 2020-09-11 2023-03-24 兆易创新科技集团股份有限公司 电压产生电路及电子装置

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Also Published As

Publication number Publication date
GB9118530D0 (en) 1991-10-16
NL193703C (nl) 2000-07-04
ITMI912287A1 (it) 1992-12-13
DE4124427C2 (de) 1994-06-30
FR2677793A1 (fr) 1992-12-18
HK28597A (en) 1997-03-21
DE4124427A1 (de) 1992-12-17
US5146152A (en) 1992-09-08
KR940003406B1 (ko) 1994-04-21
RU2146388C1 (ru) 2000-03-10
CN1067751A (zh) 1993-01-06
IT1251297B (it) 1995-05-08
JPH0793006B2 (ja) 1995-10-09
FR2677793B1 (fr) 1997-01-31
GB2256731B (en) 1996-01-10
NL193703B (nl) 2000-03-01
GB2256731A (en) 1992-12-16
ITMI912287A0 (it) 1991-08-26
NL9101377A (nl) 1993-01-04
KR930001574A (ko) 1993-01-16
JPH04366492A (ja) 1992-12-18
CN1090775C (zh) 2002-09-11

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