GB2362031B - Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method - Google Patents

Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method

Info

Publication number
GB2362031B
GB2362031B GB0026926A GB0026926A GB2362031B GB 2362031 B GB2362031 B GB 2362031B GB 0026926 A GB0026926 A GB 0026926A GB 0026926 A GB0026926 A GB 0026926A GB 2362031 B GB2362031 B GB 2362031B
Authority
GB
United Kingdom
Prior art keywords
flip
semiconductor device
type semiconductor
thermosetting resin
chip type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0026926A
Other languages
English (en)
Other versions
GB2362031A (en
GB0026926D0 (en
Inventor
Hirokazu Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to GB0227548A priority Critical patent/GB2385465A/en
Priority to GB0227550A priority patent/GB2385466A/en
Publication of GB0026926D0 publication Critical patent/GB0026926D0/en
Publication of GB2362031A publication Critical patent/GB2362031A/en
Application granted granted Critical
Publication of GB2362031B publication Critical patent/GB2362031B/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0231—Manufacturing methods of the redistribution layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0233—Structure of the redistribution layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0233—Structure of the redistribution layers
    • H01L2224/02333—Structure of the redistribution layers being a bump
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB0026926A 1999-11-04 2000-11-03 Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method Ceased GB2362031B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0227548A GB2385465A (en) 1999-11-04 2000-11-03 Flip-chip stress aborbing layers and connections
GB0227550A GB2385466A (en) 1999-11-04 2000-11-03 Flip-chip device having stress absorbing layers and contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31368499A JP3450238B2 (ja) 1999-11-04 1999-11-04 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
GB0026926D0 GB0026926D0 (en) 2000-12-20
GB2362031A GB2362031A (en) 2001-11-07
GB2362031B true GB2362031B (en) 2002-11-27

Family

ID=18044278

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0026926A Ceased GB2362031B (en) 1999-11-04 2000-11-03 Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method

Country Status (6)

Country Link
US (2) US6696317B1 (zh)
JP (1) JP3450238B2 (zh)
KR (1) KR100425559B1 (zh)
CN (1) CN1221026C (zh)
GB (1) GB2362031B (zh)
TW (1) TW477043B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3842548B2 (ja) * 2000-12-12 2006-11-08 富士通株式会社 半導体装置の製造方法及び半導体装置
US6646347B2 (en) * 2001-11-30 2003-11-11 Motorola, Inc. Semiconductor power device and method of formation
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
US6992001B1 (en) * 2003-05-08 2006-01-31 Kulicke And Soffa Industries, Inc. Screen print under-bump metalization (UBM) to produce low cost flip chip substrate
JP2004349593A (ja) * 2003-05-26 2004-12-09 Sanyo Electric Co Ltd 半導体装置及びその製造方法
CN101375382B (zh) * 2003-08-14 2011-04-20 宇芯（毛里求斯）控股有限公司 半导体器件封装及其制造方法
JP2005142553A (ja) * 2003-10-15 2005-06-02 Toshiba Corp 半導体装置
TWI309456B (en) * 2004-04-27 2009-05-01 Advanced Semiconductor Eng Chip package structure and process for fabricating the same
US20060094225A1 (en) * 2004-10-28 2006-05-04 Cheng-Yuan Lin Methods for forming solder bumps on circuit boards
KR20060087273A (ko) * 2005-01-28 2006-08-02 삼성전기주식회사 반도체 패키지및 그 제조방법
JP5100032B2 (ja) * 2005-06-27 2012-12-19 ラピスセミコンダクタ株式会社 基板の表面改質方法及び半導体装置の製造方法
JP4395775B2 (ja) * 2005-10-05 2010-01-13 ソニー株式会社 半導体装置及びその製造方法
ATE502398T1 (de) * 2006-01-24 2011-04-15 Nxp Bv Spannungspufferungsgehäuse für ein halbleiterbauelement
KR100717909B1 (ko) * 2006-02-24 2007-05-14 삼성전기주식회사 니켈층을 포함하는 기판 및 이의 제조방법
DE102006036728B4 (de) * 2006-08-05 2017-01-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur elektrischen Kontaktierung mikroelektronischer Bauelemente auf einer Leiterplatte
JP5140961B2 (ja) * 2006-08-15 2013-02-13 日本電気株式会社 半導体素子及びその製造方法、並びに半導体装置及びその製造方法
CN101796633A (zh) * 2007-07-26 2010-08-04 Nxp股份有限公司 用于半导体部件中的叠层的增强结构
CN101765913B (zh) * 2007-07-30 2012-10-03 Nxp股份有限公司 底部粗糙度减小的半导体部件的应力缓冲元件
JP5075611B2 (ja) * 2007-12-21 2012-11-21 ローム株式会社 半導体装置
JP5386302B2 (ja) * 2009-10-27 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
TWI441358B (zh) * 2012-01-12 2014-06-11 Lextar Electronics Corp 晶片封裝結構及其製造方法
KR101629273B1 (ko) * 2014-12-24 2016-06-14 주식회사 에스에프에이반도체 반도체 연결패드 상의 범프 구조물 및 이의 형성방법
KR102170383B1 (ko) * 2018-12-27 2020-10-27 주식회사 오킨스전자 플립칩 자기 센서 패키지 및 그 제조 방법
US10636696B1 (en) * 2019-01-18 2020-04-28 Applied Materials, Inc. Methods for forming vias in polymer layers
KR102564459B1 (ko) * 2019-05-09 2023-08-07 현대자동차주식회사 양면 냉각 파워모듈의 스페이서 구조 및 그 제조 방법

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682061A (en) * 1990-09-24 1997-10-28 Tessera, Inc. Component for connecting a semiconductor chip to a substrate
US5683942A (en) * 1994-05-25 1997-11-04 Nec Corporation Method for manufacturing bump leaded film carrier type semiconductor device
WO1998025297A1 (fr) * 1996-12-04 1998-06-11 Seiko Epson Corporation Element electronique et dispositif a semiconducteur, procede de fabrication et de montage dudit dispositif, plaquette de circuit et materiel electronique
WO1999017352A1 (en) * 1997-09-30 1999-04-08 Partnerships Limited, Inc. Method and compositions for metallizing microvias and high density interconnects in photodefined dielectrics
EP1043922A1 (en) * 1997-12-29 2000-10-11 Ibiden Co., Ltd. Multilayer printed wiring board
JP2001024021A (ja) * 1999-07-09 2001-01-26 Hitachi Ltd 半導体装置及びその製造方法
US20010004134A1 (en) * 1999-12-15 2001-06-21 Kazuto Saitoh Electronic device and method of producing same
US20010013425A1 (en) * 1999-03-11 2001-08-16 Shinko Electric Industries Co., Ltd. Multilayered Substrate for Semiconductor Device
EP1128431A2 (en) * 2000-02-21 2001-08-29 Nec Corporation Flip-chip type semiconductor device and method of manufacturing the same
US20010018986A1 (en) * 2000-02-21 2001-09-06 Akira Nagai Resin compound, and adhesive film, metal-clad adhesive film, circuit board, and assembly structure, using the resin compound

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03119737A (ja) 1989-10-02 1991-05-22 Fujitsu Ltd 向かい合わせ電極の接続方法
US5074947A (en) 1989-12-18 1991-12-24 Epoxy Technology, Inc. Flip chip technology using electrically conductive polymers and dielectrics
JPH05275489A (ja) 1992-03-26 1993-10-22 Hitachi Ltd 電極間の接続構造
JP3057130B2 (ja) 1993-02-18 2000-06-26 三菱電機株式会社 樹脂封止型半導体パッケージおよびその製造方法
JP3150253B2 (ja) 1994-07-22 2001-03-26 三菱電機株式会社 半導体装置およびその製造方法並びに実装方法
KR100218996B1 (ko) 1995-03-24 1999-09-01 모기 쥰이찌 반도체장치
JP3569585B2 (ja) 1995-03-24 2004-09-22 新光電気工業株式会社 半導体装置
JP3356921B2 (ja) 1995-03-24 2002-12-16 新光電気工業株式会社 半導体装置およびその製造方法
US5736790A (en) 1995-09-21 1998-04-07 Kabushiki Kaisha Toshiba Semiconductor chip, package and semiconductor device
JPH09148334A (ja) 1995-09-21 1997-06-06 Toshiba Corp バンプ、バンプを有する半導体チップ及びパッケージ並びに実装方法及び半導体装置
JP3311215B2 (ja) 1995-09-28 2002-08-05 株式会社東芝 半導体装置
US5866949A (en) * 1996-12-02 1999-02-02 Minnesota Mining And Manufacturing Company Chip scale ball grid array for integrated circuit packaging
JPH10303327A (ja) 1997-04-23 1998-11-13 Yamaichi Electron Co Ltd 半導体チップの接点変換構造と該接点変換構造を有する半導体チップの製造法
JP3351706B2 (ja) 1997-05-14 2002-12-03 株式会社東芝 半導体装置およびその製造方法
JP3714444B2 (ja) 1997-07-23 2005-11-09 新光電気工業株式会社 半導体装置とその製造方法
JPH1174309A (ja) 1997-08-27 1999-03-16 Toshiba Corp 半導体装置およびその製造方法
JPH1197578A (ja) * 1997-09-22 1999-04-09 Hitachi Ltd 半導体装置及び製造方法
JP3152180B2 (ja) 1997-10-03 2001-04-03 日本電気株式会社 半導体装置及びその製造方法
JPH11224885A (ja) 1998-02-06 1999-08-17 Matsushita Electron Corp 半導体装置
JP4416876B2 (ja) 1998-09-30 2010-02-17 イビデン株式会社 半導体チップ及び半導体チップの製造方法
JP2000269256A (ja) 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置及びその製造方法
JP2000349197A (ja) 1999-06-09 2000-12-15 Matsushita Electric Ind Co Ltd 半導体ウェハ封止基板
JP2001028379A (ja) 1999-07-15 2001-01-30 Asahi Chem Ind Co Ltd 半導体装置及びその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682061A (en) * 1990-09-24 1997-10-28 Tessera, Inc. Component for connecting a semiconductor chip to a substrate
US5683942A (en) * 1994-05-25 1997-11-04 Nec Corporation Method for manufacturing bump leaded film carrier type semiconductor device
WO1998025297A1 (fr) * 1996-12-04 1998-06-11 Seiko Epson Corporation Element electronique et dispositif a semiconducteur, procede de fabrication et de montage dudit dispositif, plaquette de circuit et materiel electronique
WO1999017352A1 (en) * 1997-09-30 1999-04-08 Partnerships Limited, Inc. Method and compositions for metallizing microvias and high density interconnects in photodefined dielectrics
EP1043922A1 (en) * 1997-12-29 2000-10-11 Ibiden Co., Ltd. Multilayer printed wiring board
US20010013425A1 (en) * 1999-03-11 2001-08-16 Shinko Electric Industries Co., Ltd. Multilayered Substrate for Semiconductor Device
JP2001024021A (ja) * 1999-07-09 2001-01-26 Hitachi Ltd 半導体装置及びその製造方法
US20010004134A1 (en) * 1999-12-15 2001-06-21 Kazuto Saitoh Electronic device and method of producing same
EP1128431A2 (en) * 2000-02-21 2001-08-29 Nec Corporation Flip-chip type semiconductor device and method of manufacturing the same
US20010018986A1 (en) * 2000-02-21 2001-09-06 Akira Nagai Resin compound, and adhesive film, metal-clad adhesive film, circuit board, and assembly structure, using the resin compound

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE Electronic components and Technology conf. 1993, Matsui et al, NEC Corporation, pp 205 - 210 *
IEMT/IMC Proc."Advanced MCM-Ls for consumer Electronics"1998Amami et al, pp 249-254 *

Also Published As

Publication number Publication date
KR100425559B1 (ko) 2004-04-03
JP2001135663A (ja) 2001-05-18
US20040082101A1 (en) 2004-04-29
CN1221026C (zh) 2005-09-28
JP3450238B2 (ja) 2003-09-22
TW477043B (en) 2002-02-21
US6696317B1 (en) 2004-02-24
CN1295344A (zh) 2001-05-16
GB2362031A (en) 2001-11-07
GB0026926D0 (en) 2000-12-20
KR20010060248A (ko) 2001-07-06
US6767761B2 (en) 2004-07-27

Similar Documents

Publication Publication Date Title
GB2362031B (en) Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method
EP1251558A8 (en) Semiconductor device
EP1160856A3 (en) Flip chip type semiconductor device and method of manufacturing the same
TWI266394B (en) Semiconductor device and method of fabricating the same
SG81960A1 (en) Semiconductor device, substrate for a semiconductor device, method of manufacture thereof, and electronic instrument
TW200620607A (en) Flip chip and wire bond semiconductor package
TW200504995A (en) Stacked chip semiconductor device and method for manufacturing the same
SG170064A1 (en) Solder bump with inner core pillar in semiconductor package
HK1067788A1 (en) A semiconductor device and its manufacturing method
HK1073389A1 (en) Semiconductor device and method of manufacturing the same
TW200627562A (en) Chip electrical connection structure and fabrication method thereof
WO2002045152A3 (en) Flip chip mounting technique
TWI256719B (en) Semiconductor device package module and manufacturing method thereof
SG139753A1 (en) Semiconductor device
SG171655A1 (en) Semiconductor device and method of making integrated passive devices
HK1006241A1 (en) Low alpha emission interconnect system for electronic devices and its formation thereof
SG142152A1 (en) Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding
TW200504952A (en) Method of manufacturing semiconductor package and method of manufacturing semiconductor device
TW200419762A (en) Bumpless chip package
TW369710B (en) Semiconductor apparatus and its producing method
SG122016A1 (en) Semiconductor chip package and method of manufacture
WO2004061962A3 (en) Multi-layer integrated semiconductor structure
TW200620585A (en) Semiconductor package structure and method for fabricating the same
TW243550B (en) Semiconductor having a solder bump and process
EP1367645A3 (en) Semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
AT Applications terminated before publication under section 16(1)