JP5075611B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5075611B2 JP5075611B2 JP2007329505A JP2007329505A JP5075611B2 JP 5075611 B2 JP5075611 B2 JP 5075611B2 JP 2007329505 A JP2007329505 A JP 2007329505A JP 2007329505 A JP2007329505 A JP 2007329505A JP 5075611 B2 JP5075611 B2 JP 5075611B2
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- 239000004065 semiconductor Substances 0.000 title claims description 99
- 229920005989 resin Polymers 0.000 claims description 146
- 239000011347 resin Substances 0.000 claims description 146
- 238000007789 sealing Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 64
- 229910000679 solder Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 230000008602 contraction Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Description
11 シリコン基板(半導体基板)
12 電極パット
13 封止樹脂層
13a 周縁部
14,34,54 メタルポスト
35,45,55,65 半田ボール(突起電極)
16 角
17,17a,17b,27,
37,47,57 低弾性樹脂層
18 導電性バンプ部
19 プリント基板(外部基板)
Claims (14)
- 半導体基板と、
前記半導体基板の上面上に形成された封止樹脂層と、
前記封止樹脂層から上面が露出するように前記半導体基板の上面上に設けられたメタルポストと、
前記メタルポストの上面上に設けられた突起電極と、
前記封止樹脂層よりも弾性率が低い樹脂材料から構成され、前記突起電極と前記封止樹脂層との間に少なくとも一部が介在するように、前記封止樹脂層の上面上に設けられた低弾性樹脂層とを備え、
平面視において、前記低弾性樹脂層は、前記メタルポストの周縁部の少なくとも一部、且つ、前記封止樹脂層と前記メタルポストとが接する境界表面に設けられることを特徴とする半導体装置。 - 平面視において、前記低弾性樹脂層は、前記境界表面の少なくとも1部に設けられることを特徴とする請求項1に記載の半導体装置。
- 前記低弾性樹脂層は、前記封止樹脂層の上面を全て被覆していることを特徴とする請求項1又は請求項2に記載の半導体装置。
- 前記低弾性樹脂層は、ポリイミドからなることを特徴とする請求項1〜請求項3のいずれかに記載の半導体装置。
- 前記突起電極は、半田からなることを特徴とする請求項1〜請求項4のいずれかに記載の半導体装置。
- 前記半導体基板は、シリコン基板であることを特徴とする請求項1〜請求項5のいずれかに記載の半導体装置。
- 前記封止樹脂層は、エポキシ複合材料からなることを特徴とする請求項1〜請求項6のいずれかに記載の半導体装置。
- 前記メタルポストは、Cuからなることを特徴とする請求項1〜請求項7のいずれかに記載の半導体装置。
- 前記半導体基板は、その上面に、前記メタルポストと電気的に接続される電気パッドを有し、
前記メタルポストは、前記電気パッドの上面に形成されることを特徴とする請求項1〜請求項8のいずれかに記載の半導体装置。 - 前記電気パッドは、前記半導体基板の上面に形成された配線部の一部であることを特徴とする請求項9に記載の半導体装置。
- 前記メタルポストの上面は、前記封止樹脂層の上面よりも下方にあることを特徴とする請求項1〜請求項10のいずれかに記載の半導体装置。
- 前記メタルポストの上面は、前記封止樹脂層の上面と同一面であることを特徴とする請求項1〜請求項11のいずれかに記載の半導体装置。
- 前記メタルポストの上面は、前記封止樹脂層の上面よりも上方よりも上方に突出した位置にあることを特徴とする請求項1〜請求項12のいずれかに記載の半導体装置。
- 前記低弾性樹脂層は、前記メタルポストの上面を被覆しないことを特徴とする請求項1〜請求項13のいずれかに記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007329505A JP5075611B2 (ja) | 2007-12-21 | 2007-12-21 | 半導体装置 |
US12/339,218 US7928583B2 (en) | 2007-12-21 | 2008-12-19 | Semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
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JP2007329505A JP5075611B2 (ja) | 2007-12-21 | 2007-12-21 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
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JP2009152423A JP2009152423A (ja) | 2009-07-09 |
JP2009152423A5 JP2009152423A5 (ja) | 2010-12-09 |
JP5075611B2 true JP5075611B2 (ja) | 2012-11-21 |
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JP2007329505A Expired - Fee Related JP5075611B2 (ja) | 2007-12-21 | 2007-12-21 | 半導体装置 |
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JP (1) | JP5075611B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9524945B2 (en) | 2010-05-18 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with L-shaped non-metal sidewall protection structure |
US8198133B2 (en) * | 2009-07-13 | 2012-06-12 | International Business Machines Corporation | Structures and methods to improve lead-free C4 interconnect reliability |
WO2011027185A1 (zh) * | 2009-09-01 | 2011-03-10 | 先进封装技术私人有限公司 | 封装结构 |
JP5226639B2 (ja) * | 2009-10-09 | 2013-07-03 | 株式会社テラミクロス | 半導体装置およびその製造方法 |
JP2010268010A (ja) * | 2010-08-31 | 2010-11-25 | Sony Chemical & Information Device Corp | 電子部品、並びに、接合体及びその製造方法 |
JP5966330B2 (ja) * | 2011-11-24 | 2016-08-10 | ローム株式会社 | 半導体チップおよび半導体パッケージ |
US9627290B2 (en) * | 2011-12-07 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structure design for stress reduction |
US9159686B2 (en) | 2012-01-24 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Crack stopper on under-bump metallization layer |
JP6182309B2 (ja) * | 2012-11-28 | 2017-08-16 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
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---|---|---|---|---|
JP3496569B2 (ja) * | 1999-04-23 | 2004-02-16 | カシオ計算機株式会社 | 半導体装置及びその製造方法並びにその実装構造 |
JP3450238B2 (ja) * | 1999-11-04 | 2003-09-22 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP2001339012A (ja) * | 2000-05-30 | 2001-12-07 | Nec Kyushu Ltd | 半導体装置およびその製造方法 |
JP3998564B2 (ja) | 2002-11-13 | 2007-10-31 | 株式会社巴川製紙所 | 半導体封止用硬化性接着剤組成物および接着シート |
JP4360873B2 (ja) * | 2003-09-18 | 2009-11-11 | ミナミ株式会社 | ウエハレベルcspの製造方法 |
US7294929B2 (en) * | 2003-12-30 | 2007-11-13 | Texas Instruments Incorporated | Solder ball pad structure |
TWI295498B (en) * | 2005-09-30 | 2008-04-01 | Siliconware Precision Industries Co Ltd | Semiconductor element with conductive bumps and fabrication method thereof |
-
2007
- 2007-12-21 JP JP2007329505A patent/JP5075611B2/ja not_active Expired - Fee Related
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2008
- 2008-12-19 US US12/339,218 patent/US7928583B2/en not_active Expired - Fee Related
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US20090160063A1 (en) | 2009-06-25 |
JP2009152423A (ja) | 2009-07-09 |
US7928583B2 (en) | 2011-04-19 |
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