GB1474745A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- GB1474745A GB1474745A GB3924474A GB3924474A GB1474745A GB 1474745 A GB1474745 A GB 1474745A GB 3924474 A GB3924474 A GB 3924474A GB 3924474 A GB3924474 A GB 3924474A GB 1474745 A GB1474745 A GB 1474745A
- Authority
- GB
- United Kingdom
- Prior art keywords
- source
- drain
- region
- substrate
- depletion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679373A JPS5613029B2 (enrdf_load_stackoverflow) | 1973-09-21 | 1973-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1474745A true GB1474745A (en) | 1977-05-25 |
Family
ID=14442758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3924474A Expired GB1474745A (en) | 1973-09-21 | 1974-09-09 | Nonvolatile semiconductor memory |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5613029B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1060993A (enrdf_load_stackoverflow) |
| DE (1) | DE2444906C3 (enrdf_load_stackoverflow) |
| GB (1) | GB1474745A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458376A (en) * | 1977-10-19 | 1979-05-11 | Agency Of Ind Science & Technol | Semiconductor memory unit and its writing method |
| US4375087C1 (en) * | 1980-04-09 | 2002-01-01 | Hughes Aircraft Co | Electrically erasable programmable read-only memory |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1175601A (en) * | 1966-03-28 | 1969-12-23 | Matsushita Electronics Corp | Insulated-Gate Field-Effect Transistor |
| DE2201028C3 (de) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens |
-
1973
- 1973-09-21 JP JP10679373A patent/JPS5613029B2/ja not_active Expired
-
1974
- 1974-09-09 GB GB3924474A patent/GB1474745A/en not_active Expired
- 1974-09-11 CA CA208,942A patent/CA1060993A/en not_active Expired
- 1974-09-19 DE DE2444906A patent/DE2444906C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5613029B2 (enrdf_load_stackoverflow) | 1981-03-25 |
| JPS5057779A (enrdf_load_stackoverflow) | 1975-05-20 |
| DE2444906C3 (de) | 1982-02-04 |
| CA1060993A (en) | 1979-08-21 |
| DE2444906A1 (de) | 1975-04-24 |
| DE2444906B2 (de) | 1981-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0616334A4 (en) | REMANENT SEMICONDUCTOR MEMORY WITH FLOATING GRID. | |
| SE8000393L (sv) | Sett och anordning vid halvledarminnen | |
| ATE52148T1 (de) | Elektrisch programmierbare und loeschbare speichervorrichtung vom mos-typ. | |
| KR890003033A (ko) | 반도체 기억장치 | |
| GB1518703A (en) | Nonvolatile momory semiconductor device | |
| GB1474745A (en) | Nonvolatile semiconductor memory | |
| GB1466007A (en) | Data storage apparatus employing variable threshold field effect semiconductor devices | |
| JPS5780779A (en) | Semiconductor non-volatile memory | |
| JPS61166078A (ja) | フロ−テイング・ゲ−ト型不揮発性メモリ−素子 | |
| JPH02159071A (ja) | 不揮発性半導体記憶素子 | |
| JPS52106275A (en) | Floating type nonvoltile semiconductor memory element | |
| JPS5263684A (en) | Non-volatile semiconductor memory device | |
| GB1400780A (en) | Insulated gate field effect transistors | |
| JPS5275187A (en) | Mos type semiconductor device | |
| JPH0563027B2 (enrdf_load_stackoverflow) | ||
| SE7510484L (sv) | Minnes-fet | |
| JPS5429985A (en) | Semiconductor nonvolatile memory device | |
| KR910020897A (ko) | 불휘발성 반도체메모리 | |
| JPS5353983A (en) | Semiconductor non-volatile memory device | |
| JPS57105890A (en) | Semiconductor storage device | |
| JPS52104078A (en) | Semiconductor unit | |
| KR920005146A (ko) | 반도체 메모리 및 그 동작 방법 | |
| JPS5422782A (en) | Manufacture of semiconductor device | |
| JPS5258489A (en) | Production of semiconductor memory element | |
| JPS5389379A (en) | Memory element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |