JPS5057779A - - Google Patents

Info

Publication number
JPS5057779A
JPS5057779A JP48106793A JP10679373A JPS5057779A JP S5057779 A JPS5057779 A JP S5057779A JP 48106793 A JP48106793 A JP 48106793A JP 10679373 A JP10679373 A JP 10679373A JP S5057779 A JPS5057779 A JP S5057779A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48106793A
Other languages
Japanese (ja)
Other versions
JPS5613029B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10679373A priority Critical patent/JPS5613029B2/ja
Priority to GB3924474A priority patent/GB1474745A/en
Priority to CA208,942A priority patent/CA1060993A/en
Priority to DE2444906A priority patent/DE2444906C3/de
Publication of JPS5057779A publication Critical patent/JPS5057779A/ja
Priority to US05/705,561 priority patent/US4123771A/en
Publication of JPS5613029B2 publication Critical patent/JPS5613029B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP10679373A 1973-09-21 1973-09-21 Expired JPS5613029B2 (enrdf_load_stackoverflow)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10679373A JPS5613029B2 (enrdf_load_stackoverflow) 1973-09-21 1973-09-21
GB3924474A GB1474745A (en) 1973-09-21 1974-09-09 Nonvolatile semiconductor memory
CA208,942A CA1060993A (en) 1973-09-21 1974-09-11 Nonvolatile semiconductor memory
DE2444906A DE2444906C3 (de) 1973-09-21 1974-09-19 MNOS-Speicher-FET
US05/705,561 US4123771A (en) 1973-09-21 1976-07-15 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10679373A JPS5613029B2 (enrdf_load_stackoverflow) 1973-09-21 1973-09-21

Publications (2)

Publication Number Publication Date
JPS5057779A true JPS5057779A (enrdf_load_stackoverflow) 1975-05-20
JPS5613029B2 JPS5613029B2 (enrdf_load_stackoverflow) 1981-03-25

Family

ID=14442758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10679373A Expired JPS5613029B2 (enrdf_load_stackoverflow) 1973-09-21 1973-09-21

Country Status (4)

Country Link
JP (1) JPS5613029B2 (enrdf_load_stackoverflow)
CA (1) CA1060993A (enrdf_load_stackoverflow)
DE (1) DE2444906C3 (enrdf_load_stackoverflow)
GB (1) GB1474745A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458376A (en) * 1977-10-19 1979-05-11 Agency Of Ind Science & Technol Semiconductor memory unit and its writing method
JPS5718087A (en) * 1980-04-09 1982-01-29 Hughes Aircraft Co Electrically erasable programmable read only memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1175601A (en) * 1966-03-28 1969-12-23 Matsushita Electronics Corp Insulated-Gate Field-Effect Transistor
DE2201028C3 (de) * 1971-01-15 1981-07-09 Intel Corp., Mountain View, Calif. Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458376A (en) * 1977-10-19 1979-05-11 Agency Of Ind Science & Technol Semiconductor memory unit and its writing method
JPS5718087A (en) * 1980-04-09 1982-01-29 Hughes Aircraft Co Electrically erasable programmable read only memory device

Also Published As

Publication number Publication date
GB1474745A (en) 1977-05-25
DE2444906B2 (de) 1981-05-27
DE2444906C3 (de) 1982-02-04
DE2444906A1 (de) 1975-04-24
CA1060993A (en) 1979-08-21
JPS5613029B2 (enrdf_load_stackoverflow) 1981-03-25

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