CA1060993A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- CA1060993A CA1060993A CA208,942A CA208942A CA1060993A CA 1060993 A CA1060993 A CA 1060993A CA 208942 A CA208942 A CA 208942A CA 1060993 A CA1060993 A CA 1060993A
- Authority
- CA
- Canada
- Prior art keywords
- source
- substrate
- gate
- drain
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000005669 field effect Effects 0.000 claims abstract description 3
- 238000009413 insulation Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000013459 approach Methods 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 6
- 238000010893 electron trap Methods 0.000 claims description 5
- 230000009183 running Effects 0.000 claims 2
- 230000003334 potential effect Effects 0.000 claims 1
- 230000015654 memory Effects 0.000 description 46
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VLQGDKKHHCKIOJ-UHFFFAOYSA-N NNOS Chemical compound NNOS VLQGDKKHHCKIOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679373A JPS5613029B2 (enrdf_load_stackoverflow) | 1973-09-21 | 1973-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1060993A true CA1060993A (en) | 1979-08-21 |
Family
ID=14442758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA208,942A Expired CA1060993A (en) | 1973-09-21 | 1974-09-11 | Nonvolatile semiconductor memory |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5613029B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1060993A (enrdf_load_stackoverflow) |
| DE (1) | DE2444906C3 (enrdf_load_stackoverflow) |
| GB (1) | GB1474745A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5458376A (en) * | 1977-10-19 | 1979-05-11 | Agency Of Ind Science & Technol | Semiconductor memory unit and its writing method |
| US4375087C1 (en) * | 1980-04-09 | 2002-01-01 | Hughes Aircraft Co | Electrically erasable programmable read-only memory |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1175601A (en) * | 1966-03-28 | 1969-12-23 | Matsushita Electronics Corp | Insulated-Gate Field-Effect Transistor |
| DE2201028C3 (de) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens |
-
1973
- 1973-09-21 JP JP10679373A patent/JPS5613029B2/ja not_active Expired
-
1974
- 1974-09-09 GB GB3924474A patent/GB1474745A/en not_active Expired
- 1974-09-11 CA CA208,942A patent/CA1060993A/en not_active Expired
- 1974-09-19 DE DE2444906A patent/DE2444906C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1474745A (en) | 1977-05-25 |
| DE2444906B2 (de) | 1981-05-27 |
| DE2444906C3 (de) | 1982-02-04 |
| DE2444906A1 (de) | 1975-04-24 |
| JPS5057779A (enrdf_load_stackoverflow) | 1975-05-20 |
| JPS5613029B2 (enrdf_load_stackoverflow) | 1981-03-25 |
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