ATE52148T1 - Elektrisch programmierbare und loeschbare speichervorrichtung vom mos-typ. - Google Patents

Elektrisch programmierbare und loeschbare speichervorrichtung vom mos-typ.

Info

Publication number
ATE52148T1
ATE52148T1 AT83300450T AT83300450T ATE52148T1 AT E52148 T1 ATE52148 T1 AT E52148T1 AT 83300450 T AT83300450 T AT 83300450T AT 83300450 T AT83300450 T AT 83300450T AT E52148 T1 ATE52148 T1 AT E52148T1
Authority
AT
Austria
Prior art keywords
memory cell
region
tunnelling
storage device
source
Prior art date
Application number
AT83300450T
Other languages
English (en)
Inventor
George Perlegos
Original Assignee
Seeq Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seeq Technology Inc filed Critical Seeq Technology Inc
Application granted granted Critical
Publication of ATE52148T1 publication Critical patent/ATE52148T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
AT83300450T 1982-01-29 1983-01-28 Elektrisch programmierbare und loeschbare speichervorrichtung vom mos-typ. ATE52148T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/343,847 US4558344A (en) 1982-01-29 1982-01-29 Electrically-programmable and electrically-erasable MOS memory device
EP83300450A EP0085550B1 (de) 1982-01-29 1983-01-28 Elektrisch programmierbare und löschbare Speichervorrichtung vom MOS-Typ

Publications (1)

Publication Number Publication Date
ATE52148T1 true ATE52148T1 (de) 1990-05-15

Family

ID=23347938

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83300450T ATE52148T1 (de) 1982-01-29 1983-01-28 Elektrisch programmierbare und loeschbare speichervorrichtung vom mos-typ.

Country Status (5)

Country Link
US (1) US4558344A (de)
EP (1) EP0085550B1 (de)
JP (1) JPS58169959A (de)
AT (1) ATE52148T1 (de)
DE (1) DE3381484D1 (de)

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JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
EP0133667A3 (en) * 1983-08-12 1987-08-26 American Microsystems, Incorporated High coupling ratio dense electrically erasable programmable read-only memory
US4768169A (en) * 1983-10-28 1988-08-30 Seeq Technology, Inc. Fault-tolerant memory array
US4654825A (en) * 1984-01-06 1987-03-31 Advanced Micro Devices, Inc. E2 prom memory cell
JPH0673375B2 (ja) * 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
US4787047A (en) * 1985-03-22 1988-11-22 Intersil Electrically erasable fused programmable logic array
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
US4939558A (en) * 1985-09-27 1990-07-03 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
JPH0777078B2 (ja) * 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ
JPH0772996B2 (ja) * 1987-01-31 1995-08-02 株式会社東芝 不揮発性半導体メモリ
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
US5177705A (en) * 1989-09-05 1993-01-05 Texas Instruments Incorporated Programming of an electrically-erasable, electrically-programmable, read-only memory array
US5036378A (en) * 1989-11-01 1991-07-30 At&T Bell Laboratories Memory device
US5455792A (en) * 1994-09-09 1995-10-03 Yi; Yong-Wan Flash EEPROM devices employing mid channel injection
US5640344A (en) * 1995-07-25 1997-06-17 Btr, Inc. Programmable non-volatile bidirectional switch for programmable logic
KR100192430B1 (ko) * 1995-08-21 1999-06-15 구본준 비휘발성 메모리 및 이 비휘발성 메모리를 프로그램하는 방법
EP0778581B1 (de) * 1995-12-07 2002-08-14 Samsung Electronics Co., Ltd. Nichtflüchtige Speicheranordnung
WO1997048099A1 (en) * 1996-06-14 1997-12-18 Siemens Aktiengesellschaft A device and method for multi-level charge/storage and reading out
US5986931A (en) * 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
KR100437470B1 (ko) 2001-01-31 2004-06-23 삼성전자주식회사 플래쉬 메모리 셀을 갖는 반도체 장치 및 그 제조 방법
FR2844090A1 (fr) * 2002-08-27 2004-03-05 St Microelectronics Sa Cellule memoire pour registre non volatile a lecture rapide
US7095075B2 (en) 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US7148538B2 (en) * 2003-12-17 2006-12-12 Micron Technology, Inc. Vertical NAND flash memory array
US7241654B2 (en) 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array
US6878991B1 (en) 2004-01-30 2005-04-12 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells

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US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
US3919711A (en) * 1973-02-26 1975-11-11 Intel Corp Erasable floating gate device
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
JPS571149B2 (de) * 1974-08-28 1982-01-09
US4016588A (en) * 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
JPS587923B2 (ja) * 1975-09-06 1983-02-14 イシカワ ジロウ ハグルマケンサホウホウトソウチ
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
JPS5929155B2 (ja) * 1979-11-12 1984-07-18 富士通株式会社 半導体記憶装置
EP0053075B1 (de) * 1980-11-26 1988-04-20 Fujitsu Limited Nichtflüchtiger Speicher
JPS6034198B2 (ja) * 1980-11-26 1985-08-07 富士通株式会社 不揮発性メモリ
US4402904A (en) * 1980-12-18 1983-09-06 Combustion Engineering, Inc. Method for determining clad integrity of a nuclear fuel rod

Also Published As

Publication number Publication date
EP0085550B1 (de) 1990-04-18
DE3381484D1 (de) 1990-05-23
EP0085550A2 (de) 1983-08-10
EP0085550A3 (en) 1986-02-12
US4558344A (en) 1985-12-10
JPS58169959A (ja) 1983-10-06

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties