GB1399988A - Silicon pressure sensor - Google Patents

Silicon pressure sensor

Info

Publication number
GB1399988A
GB1399988A GB4343573A GB4343573A GB1399988A GB 1399988 A GB1399988 A GB 1399988A GB 4343573 A GB4343573 A GB 4343573A GB 4343573 A GB4343573 A GB 4343573A GB 1399988 A GB1399988 A GB 1399988A
Authority
GB
United Kingdom
Prior art keywords
wafer
layer
elements
thin
mils
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4343573A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1399988A publication Critical patent/GB1399988A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
GB4343573A 1972-10-02 1973-09-17 Silicon pressure sensor Expired GB1399988A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29395872A 1972-10-02 1972-10-02

Publications (1)

Publication Number Publication Date
GB1399988A true GB1399988A (en) 1975-07-02

Family

ID=23131288

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4343573A Expired GB1399988A (en) 1972-10-02 1973-09-17 Silicon pressure sensor

Country Status (4)

Country Link
JP (1) JPS4976489A (ja)
DE (1) DE2349463B2 (ja)
FR (1) FR2201464B1 (ja)
GB (1) GB1399988A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
US4234361A (en) 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
GB2135509A (en) * 1982-12-24 1984-08-30 Hitachi Ltd A semiconductor device having a pressure sensor and a method of manufacturing such a device
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
US10023461B2 (en) 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644638A1 (de) * 1975-10-06 1977-04-07 Honeywell Inc Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler
US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
JPS53108879U (ja) * 1977-02-08 1978-08-31
FR2380640A1 (fr) * 1977-02-09 1978-09-08 Diax Corp Transducteur d'energie a l'etat solide et son procede de fabrication
JPS5828876A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体圧力センサ装置
GB2144857A (en) * 1983-08-12 1985-03-13 Prutec Ltd Piezo resistive transducer
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
FR2746919B1 (fr) * 1996-03-28 1998-04-24 Commissariat Energie Atomique Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication
EP0822398B1 (en) * 1996-07-31 2003-04-23 STMicroelectronics S.r.l. Integrated piezoresistive pressure sensor and relative fabrication method
DE19741428A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
US4234361A (en) 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
GB2135509A (en) * 1982-12-24 1984-08-30 Hitachi Ltd A semiconductor device having a pressure sensor and a method of manufacturing such a device
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
US10023461B2 (en) 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof

Also Published As

Publication number Publication date
DE2349463A1 (de) 1974-04-18
DE2349463B2 (de) 1975-08-07
JPS4976489A (ja) 1974-07-23
FR2201464A1 (ja) 1974-04-26
FR2201464B1 (ja) 1977-05-27

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees