JPS5784148A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5784148A JPS5784148A JP16022280A JP16022280A JPS5784148A JP S5784148 A JPS5784148 A JP S5784148A JP 16022280 A JP16022280 A JP 16022280A JP 16022280 A JP16022280 A JP 16022280A JP S5784148 A JPS5784148 A JP S5784148A
- Authority
- JP
- Japan
- Prior art keywords
- type
- isolation regions
- elements
- layers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To obtain the favorable element isolation characteristic of a semiconductor device by a method wherein insulator layers having fixed electric charge are formed on a reversely conductive type elements isolation regions formed in a semiconductor layer, thus causing depletion layers to be generated in the isolation regions. CONSTITUTION:An n<+> type thin layer 12, n<++> type isolation regions 13, the n type epitaxial layers 22, a p type base layer 15 and an n type emitter layer 16 are formed on the p type silicon substrate 11. A silicon oxide film 17 is formed on the whole surface thereof, and electrodes are connected through contact holes. Then the alumina films 21 having fixed negative electric potential are made to be adhered selectively on the n type elements isolation regions 22 between the n<++> type isolation regions 13 interposing the oxide film 17 between them. The depletion layers 21 accompanying inversion are formed in the elements isolation regions 22 by the influence of fixed negative electric potential of the alumina film 21, and the depletion layers reach the p type substrate 11 to isolate respective elements electrically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16022280A JPS5784148A (en) | 1980-11-14 | 1980-11-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16022280A JPS5784148A (en) | 1980-11-14 | 1980-11-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5784148A true JPS5784148A (en) | 1982-05-26 |
Family
ID=15710352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16022280A Pending JPS5784148A (en) | 1980-11-14 | 1980-11-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5784148A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11127553B1 (en) | 2018-08-29 | 2021-09-21 | Autonetworks Technologies, Ltd. | Overcurrent cutoff unit |
-
1980
- 1980-11-14 JP JP16022280A patent/JPS5784148A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11127553B1 (en) | 2018-08-29 | 2021-09-21 | Autonetworks Technologies, Ltd. | Overcurrent cutoff unit |
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