JPS5735339A - Semiconductor device and manufacture of the same - Google Patents

Semiconductor device and manufacture of the same

Info

Publication number
JPS5735339A
JPS5735339A JP11057280A JP11057280A JPS5735339A JP S5735339 A JPS5735339 A JP S5735339A JP 11057280 A JP11057280 A JP 11057280A JP 11057280 A JP11057280 A JP 11057280A JP S5735339 A JPS5735339 A JP S5735339A
Authority
JP
Japan
Prior art keywords
layer
type
bonding pad
epitaxial layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11057280A
Other languages
Japanese (ja)
Other versions
JPS6057701B2 (en
Inventor
Kazutoshi Nagano
Tatsunori Nakajima
Kosuke Yasuno
Seiji Onaka
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11057280A priority Critical patent/JPS6057701B2/en
Publication of JPS5735339A publication Critical patent/JPS5735339A/en
Publication of JPS6057701B2 publication Critical patent/JPS6057701B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques

Abstract

PURPOSE:To shorten the heat treatment time by a method wherein a porous silicone insulating film is formed unde a bonding pad electrode and the circumference of the insulating film is constituted by N type semiconductor layer. CONSTITUTION:A porous silicon oxide film 12 and N type epitaxial layer 13, 14 are formed on a P type semiconductor substrate 11 and a silicon oxide film 15 is formed thereon. A bonding pad electrode 16, which is to be used as a terminal, leading the semiconductor element out, and a bonding pad portion 17 are formed in an N type epitaxial layer 13. According to this method parasitic capacity can be reduced and the parasitic capacity at the side of the thick oxidized film 12 becomes negligible advantageously because the N type epitaxial layer 14 exists on the side of the thick oxidized film 12 and PN junction is composed in a high concentration region of the surface of a P type seperation layer 25 and a depletion layer is formed. Thus the heat treament time can be shortened and the area of the semiconductor device can be reduced.
JP11057280A 1980-08-11 1980-08-11 Semiconductor device and its manufacturing method Expired JPS6057701B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11057280A JPS6057701B2 (en) 1980-08-11 1980-08-11 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11057280A JPS6057701B2 (en) 1980-08-11 1980-08-11 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5735339A true JPS5735339A (en) 1982-02-25
JPS6057701B2 JPS6057701B2 (en) 1985-12-16

Family

ID=14539229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11057280A Expired JPS6057701B2 (en) 1980-08-11 1980-08-11 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS6057701B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066385A2 (en) * 2003-01-23 2004-08-05 Infineon Technologies Ag Semiconductor structure having a reduced connecting capacitance and method for producing the semiconductor structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066385A2 (en) * 2003-01-23 2004-08-05 Infineon Technologies Ag Semiconductor structure having a reduced connecting capacitance and method for producing the semiconductor structure
DE10302623A1 (en) * 2003-01-23 2004-08-05 Infineon Technologies Ag Semiconductor structure with a reduced connection capacity and a method for producing the semiconductor structure
WO2004066385A3 (en) * 2003-01-23 2005-04-14 Infineon Technologies Ag Semiconductor structure having a reduced connecting capacitance and method for producing the semiconductor structure
DE10302623B4 (en) * 2003-01-23 2006-12-28 Infineon Technologies Ag Semiconductor structure with a reduced terminal capacitance and a method for producing the semiconductor structure

Also Published As

Publication number Publication date
JPS6057701B2 (en) 1985-12-16

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