JPS5688335A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5688335A
JPS5688335A JP16600179A JP16600179A JPS5688335A JP S5688335 A JPS5688335 A JP S5688335A JP 16600179 A JP16600179 A JP 16600179A JP 16600179 A JP16600179 A JP 16600179A JP S5688335 A JPS5688335 A JP S5688335A
Authority
JP
Japan
Prior art keywords
substrate
layer
type
layers
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16600179A
Other languages
Japanese (ja)
Other versions
JPS586308B2 (en
Inventor
Yasutaka Horiba
Masao Nakaya
Shuichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16600179A priority Critical patent/JPS586308B2/en
Publication of JPS5688335A publication Critical patent/JPS5688335A/en
Publication of JPS586308B2 publication Critical patent/JPS586308B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To apply a bias potential from a main surface of a substrate to the substrate without newly adding a diffusing step in an N<-> type epitaxial dielectric isolating structure. CONSTITUTION:An N<-> type epitaxial layer on a P type Si substrate 1 having N<+> type buried layers 61, 21, 23 is insulated and isolated laterally into a plurality of layers 51-54, an N<+> type layer 64 in an island 62 is formed simultaneously with N<+> type layers 24, 34 in other islands, and a metallic electrode 10 is attached thereto. The layer 61 and the junction surface 610 of the substrate 1 are partly broken down irreversibly. When positive voltage is applied to the electrode 10 and negative voltage is applied to the substrate 11 in this state, nonrectification conduction can be secured through the junction surface 610. Accordingly, bias voltage can be applied from the main surface 200 side to the substrate. The layer 61 can be omitted, but high voltage becomes necessary to break down the junction between the layer 62 and the substrate 1.
JP16600179A 1979-12-19 1979-12-19 semiconductor equipment Expired JPS586308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16600179A JPS586308B2 (en) 1979-12-19 1979-12-19 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16600179A JPS586308B2 (en) 1979-12-19 1979-12-19 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5688335A true JPS5688335A (en) 1981-07-17
JPS586308B2 JPS586308B2 (en) 1983-02-03

Family

ID=15823029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16600179A Expired JPS586308B2 (en) 1979-12-19 1979-12-19 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS586308B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323335A (en) * 1985-09-25 1988-01-30 モノリシツク　メモリ−ズ，インコ−ポレイテツド Isolation and substrate connection for bipolar integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323335A (en) * 1985-09-25 1988-01-30 モノリシツク　メモリ−ズ，インコ−ポレイテツド Isolation and substrate connection for bipolar integrated circuit

Also Published As

Publication number Publication date
JPS586308B2 (en) 1983-02-03

Similar Documents

Publication Publication Date Title
JPS54157092A (en) Semiconductor integrated circuit device
CA1252874A (en) Fault tolerant thin-film photovoltaic cell
JPS5563840A (en) Semiconductor integrated device
EP0349107A3 (en) Semiconductor devices
JPS5688335A (en) Semiconductor device
JPS57201070A (en) Semiconductor device
US4523215A (en) Semiconductor device
FR2131406A5 (en)
KR970017918A (en) High frequency circuit device and manufacturing method thereof
JPS56148863A (en) Manufacture of semiconductor device
JPS5629335A (en) Semicondutor device
JPS57111058A (en) Bipolar semiconductor integrated circuit device
JPS55157240A (en) Semiconductor device
JPS56155544A (en) Manufacture of semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS57134965A (en) Semiconductor device
JPS54141578A (en) Semiconductor device
JPS5341191A (en) Electric charge transfer device
JPS6411347A (en) Monolithic integrated circuit
JPS5730390A (en) Josephson junction element
JPS5784148A (en) Semiconductor device
JPS5717184A (en) Semiconductor device for generating photoelectromotive force
JPS5658258A (en) Semiconductor integrated circuit
JPS5673457A (en) Semiconductor device
JPS5522878A (en) Insulation gate type field effect semiconductor device