JPS577962A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS577962A
JPS577962A JP8242280A JP8242280A JPS577962A JP S577962 A JPS577962 A JP S577962A JP 8242280 A JP8242280 A JP 8242280A JP 8242280 A JP8242280 A JP 8242280A JP S577962 A JPS577962 A JP S577962A
Authority
JP
Japan
Prior art keywords
substrate
electrodes
impurity region
electrode
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8242280A
Other languages
Japanese (ja)
Inventor
Tetsuo Yamada
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8242280A priority Critical patent/JPS577962A/en
Publication of JPS577962A publication Critical patent/JPS577962A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Abstract

PURPOSE:To enable to sample hold an input signal in an MOS type semiconductor device with a small sample holding voltage by a method wherein a channel impurity region of inversely conductive type to a substrate is provided at the part of the semiconductor substrate facing to conductive electrodes. CONSTITUTION:The sample holding gate electrode 13 and the adjoining electrodes 14 for electrostatic shielding being piled up with the electrode 13 are provided on a silicon substrate 11 interposing an insulating film 12 between them. The electrodes 14 for electrostatic shielding are connected to an electric power source 15 to supply a DC bias voltage. An impurity region 16 for input of a signal and being inversely conductive to the substrate 11 is provided in high density at the part of the silicon substrate 11 adjoining to the electrode 14 for electrostatic shielding. Moreover an impurity region 17 for holding of a signal and being inversely conductive to the substrate 11 is provided in high density at the part of the silicon substrate 11 adjoining to the electrode 14 for electrostatic shielding being separated from the impurity region 16. Moreover the buried channel impurity layer 18 is provided at the part of the silicon substrate 11 facing to the electrodes 13,14.
JP8242280A 1980-06-18 1980-06-18 Mos type semiconductor device Pending JPS577962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8242280A JPS577962A (en) 1980-06-18 1980-06-18 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8242280A JPS577962A (en) 1980-06-18 1980-06-18 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS577962A true JPS577962A (en) 1982-01-16

Family

ID=13774147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8242280A Pending JPS577962A (en) 1980-06-18 1980-06-18 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS577962A (en)

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