JPS5771594A - Driving method of electric charge coupled element - Google Patents

Driving method of electric charge coupled element

Info

Publication number
JPS5771594A
JPS5771594A JP14800080A JP14800080A JPS5771594A JP S5771594 A JPS5771594 A JP S5771594A JP 14800080 A JP14800080 A JP 14800080A JP 14800080 A JP14800080 A JP 14800080A JP S5771594 A JPS5771594 A JP S5771594A
Authority
JP
Japan
Prior art keywords
electrode
potential
directly below
transferred
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14800080A
Other languages
Japanese (ja)
Other versions
JPS631680B2 (en
Inventor
Hidetsugu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14800080A priority Critical patent/JPS5771594A/en
Publication of JPS5771594A publication Critical patent/JPS5771594A/en
Publication of JPS631680B2 publication Critical patent/JPS631680B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To improve a distortion characteristic in an input part, by providing a semiconductor area for controlling the threshold voltage of its area, directly below one transfer electrode. CONSTITUTION:An input part is formed by input gate electrodes 1, 2, a semiconductor substrate 8 and an opposite conductive type area 7. Directly below one transfer electrode 3a being adjacent to this electrode 2, the substrate 8 and a semiconductor area 18 having an opposite conductive type are provided in order to control the threshold voltage. At first, a pulse phi1 of two-phase pulse driving voltage is transferred to low potential from high potential, and even if the potential of an input diode 7 becomes ''0''V, a carrier being directly below the electrode 3a is not transferred to an electrode 3b because the surface potential being directly below the electrode 3a takes a negative value against the potential of the diode 7. Subsequently, in the process in which the pulse phi1 is transferred to high potential from low potential, the surface voltage being directly below the electrode 3a is varied with a constant delay time because the threshold voltage being directly below the electrode 3a is higher positive voltage. In this way, the time required for balancing the potential is taken more, and the distortion factor is improved.
JP14800080A 1980-10-22 1980-10-22 Driving method of electric charge coupled element Granted JPS5771594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14800080A JPS5771594A (en) 1980-10-22 1980-10-22 Driving method of electric charge coupled element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14800080A JPS5771594A (en) 1980-10-22 1980-10-22 Driving method of electric charge coupled element

Publications (2)

Publication Number Publication Date
JPS5771594A true JPS5771594A (en) 1982-05-04
JPS631680B2 JPS631680B2 (en) 1988-01-13

Family

ID=15442863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14800080A Granted JPS5771594A (en) 1980-10-22 1980-10-22 Driving method of electric charge coupled element

Country Status (1)

Country Link
JP (1) JPS5771594A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641872U (en) * 1992-11-04 1994-06-03 クレハエラストマー株式会社 Screen frame of vibrating screener

Also Published As

Publication number Publication date
JPS631680B2 (en) 1988-01-13

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