FR2380640A1 - Transducteur d'energie a l'etat solide et son procede de fabrication - Google Patents

Transducteur d'energie a l'etat solide et son procede de fabrication

Info

Publication number
FR2380640A1
FR2380640A1 FR7703632A FR7703632A FR2380640A1 FR 2380640 A1 FR2380640 A1 FR 2380640A1 FR 7703632 A FR7703632 A FR 7703632A FR 7703632 A FR7703632 A FR 7703632A FR 2380640 A1 FR2380640 A1 FR 2380640A1
Authority
FR
France
Prior art keywords
leaf spring
spring structure
solid state
state energy
energy transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7703632A
Other languages
English (en)
Other versions
FR2380640B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Diax Corp
Original Assignee
Diax Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diax Corp filed Critical Diax Corp
Priority to FR7703632A priority Critical patent/FR2380640A1/fr
Publication of FR2380640A1 publication Critical patent/FR2380640A1/fr
Application granted granted Critical
Publication of FR2380640B1 publication Critical patent/FR2380640B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Des transducteurs d'énergie à l'état solide du genre à lames sont réalisés en charge à l'aide de techniques photolithographiques et de décapage à partir d'un matériau monocristallin, tel que du silicium. Le ressort à lames plié comporte des rainures allongées séparant des bras adjacents du ressort, ces rainures étant parallèles à l'axe cristallographique du matériau monocristallin, qui est de préférence un matériau de structure cristalline cubique du type diamant ou d'un type apparenté et la rainure du ressort s'étend dans des directions orthogonales parallèles aux axes cristallographiques <011> et <O11>. Le ressort est de préférence séparé par décapage d'un disque monocristallin à l'aide d'un agent anisotropique. Les rainures entre les bras adjacents du ressort sont scellés de façon étanche au liquide à l'aide de membranes d'oxyde susbsistant sur la structure de ressort. Dans un accéléromètre, des masses de détection de poids égal sont appliquées sur des faces opposées du ressort, afin d'assurer leur équilibrage dynamique. Application : réalisation de transducteurs.
FR7703632A 1977-02-09 1977-02-09 Transducteur d'energie a l'etat solide et son procede de fabrication Granted FR2380640A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7703632A FR2380640A1 (fr) 1977-02-09 1977-02-09 Transducteur d'energie a l'etat solide et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7703632A FR2380640A1 (fr) 1977-02-09 1977-02-09 Transducteur d'energie a l'etat solide et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2380640A1 true FR2380640A1 (fr) 1978-09-08
FR2380640B1 FR2380640B1 (fr) 1983-11-04

Family

ID=9186520

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703632A Granted FR2380640A1 (fr) 1977-02-09 1977-02-09 Transducteur d'energie a l'etat solide et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2380640A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702186A (en) * 1947-07-07 1955-02-15 Bell Telephone Labor Inc Accelerometer
US3295808A (en) * 1965-04-16 1967-01-03 James E Webb Parallel motion suspension device
US3697918A (en) * 1971-08-03 1972-10-10 Gen Electric Silicon diaphragm pressure sensor having improved configuration of integral strain gage elements
US3757414A (en) * 1971-03-26 1973-09-11 Honeywell Inc Method for batch fabricating semiconductor devices
FR2201464A1 (fr) * 1972-10-02 1974-04-26 Motorola Inc
FR2203172A1 (fr) * 1972-10-11 1974-05-10 Toyoda Chuo Kenkyusho Kk

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702186A (en) * 1947-07-07 1955-02-15 Bell Telephone Labor Inc Accelerometer
US3295808A (en) * 1965-04-16 1967-01-03 James E Webb Parallel motion suspension device
US3757414A (en) * 1971-03-26 1973-09-11 Honeywell Inc Method for batch fabricating semiconductor devices
US3697918A (en) * 1971-08-03 1972-10-10 Gen Electric Silicon diaphragm pressure sensor having improved configuration of integral strain gage elements
FR2201464A1 (fr) * 1972-10-02 1974-04-26 Motorola Inc
FR2203172A1 (fr) * 1972-10-11 1974-05-10 Toyoda Chuo Kenkyusho Kk

Also Published As

Publication number Publication date
FR2380640B1 (fr) 1983-11-04

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Legal Events

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